Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ATC100B102JP50XT Search Results

    ATC100B102JP50XT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ATC100A101JP150

    Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    mrfg35010anmrfg35010ant1datamrfg35010anatc100a101jp150+6gt5040atc100b101jp500xt080514r7bbsatc100a100jp150xatc100a101jp150xttransistor z14 PDF

    ATC100B102JP50XT

    Abstract: nippon capacitors JESD22 MRF6P9220HR3 A114 AN1955 ATC100B101JP500XT Nippon chemi
    Contextual Info: MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with


    Original
    mrf6p9220hr3mrfe6p9220hr3pcn1289520ers+8mrf6p9220hatc100b102jp50xtnippon capacitorsjesd22a114an1955atc100b101jp500xtnippon chemi PDF

    Contextual Info: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original
    mrf6p9220hmrf6p9220hr3mrfe6p9220hr3pcn12895 PDF

    Chemi-Con DATE CODES

    Abstract: chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 MRF6P9220HR3 Nippon chemi
    Contextual Info: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original
    mrf6p9220hmrf6p9220hr3mrfe6p9220hr3pcn12895+8chemi-con date codeschemi-con date codenippon capacitorsatc100b101jt500xta114an1955jesd22nippon chemi PDF

    RO4350B

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    mrfg35010anmrfg35010ant1500ating8/2013semiconductor+1ro4350b PDF

    nippon capacitors

    Abstract: Nippon chemi
    Contextual Info: Document Number: MRF6P9220H Rev. 3, 8/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original
    mrf6p9220hr3mrfe6p9220hr3pcn12895mrf6p9220h+2nippon capacitorsnippon chemi PDF