AT605 Search Results

Contextual Info: AVANTEK 2GE INC 0A V A N TEK lim itit i o o o tsn T D AT-60585 Up to 6 GHz Low Noise ' Silicon Bipolar Transistor A vantek 85 Plastic Package Features • • Low Bias C u rren t O peration Low N o ise Figure: 1.4 dB typ ical at 1.0 G Hz 1.9 dB typ ical at 2.0 G Hz

Contextual Info: HE WLETT-PACKARD/ m CMPNTS blE D HEW LETT PACKARD • 4447554 DDG'ìflSS 3SS AT-60510 U P to 6 GHz Low Noise Silicon Bipolar Transistor Features 100 mil Package • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

AT605

Contextual Info: RF and M icrowave S ilicon Bipolar Transistors The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include m ature technology both in the

AT-60510

Abstract: S parameters of 5.8 GHz transistor
Contextual Info: W Ap% AT-60510 Up to 6 GHz Low Noise Silicon Bipolar Transistor HEWLETT wL'f!ÆPA CK A R D Features • • • • • 100 mil Package Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz

AT60570

Contextual Info: W/ml H E W L E T T AT-60570 Up to 6 GHz Low Noise Silicon Bipolar Transistor WL'EM PACKARD 70 mil Package Features • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz • High Associated Gain: 12.5 dB typical at 2.0 GHz

AT-60500

Abstract: AT-01635 AT-21400 AT21400 AT-60586
Contextual Info: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: HEULETT-PACKARD/ CMPNTS blE 1 HEW LETT PACKARD m • M4475B4 0001958 Obi B H P A AT-60535 UP to 6 GHz Low Noise Silicon Bipolar Transistor 35 micro-X Package Features • • • • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz

Contextual Info: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz

Contextual Info: AVANTEK INC 20E D • AVANTEK i m n t t QGDbSlb 4 AT-60570 Up to 6 GHz Low Noise Silicon Bipolar Transistor ^T3 Avantek 70 mil Package Features • • Low B ias Current Operation: Low Noise Figure: 1.8 d B typical at 2.0 G Hz 2.8 d B typical at 4.0 G Hz

AT-60500

Abstract: AVANTEK transistor AVANTEK AT60500 Avantek, Inc transistor J 4081 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ AVANTEK oscillator
Contextual Info: AVANTEK SQE D INC AVAN TEK • OOGbSQ? A T60500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Avantek Chip Outline1 Features • • • • 3 Low Bias Current Operation Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.5 dB typical at 2.0 GHz

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

AT-60500

Abstract: AT60500 Hewlett-Packard AT60500
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE ThH% HEW LETT 1"KM PACKARD M 4 4 ? S a 4 DDD' i f l Sa AT-60500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip D Chip Outline1 Features • • • • b43 Low Bias Current Operation Low Noise Figure: 1.8 dB typical at 2.0 GHz

AT-60535

Abstract: AT60535 TRANSISTOR 1ft 83
Contextual Info: HEW LETT-PACKARD/ cnPNTS b lE D HEW LETT PACKARD m • 4447504 • • • OLI BHPA AT-60535 UP to 6 GHz Low Noise Silicon Bipolar Transistor 35 micro-X Package Features • • 00CHB58 Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz

transistor tt 2247

Contextual Info: AT-60585 Up to 6 GHz Low Noise Silicon Bipolar Transistor T fw l HEWLETT A"KM PACKARD Features • • • • • 85 Plastic Package Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.9 dB typical at 2.0 GHz High Associated Gain: 16.5 dB typical at 1.0 GHz

at60586

Contextual Info: tvj AT-60586 Up to 6 GHz Low Noise Silicon Bipolar Transistor H E W LETT PA CK A RD Features • • • • • • 86 Plastic Package Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.9 dB typical at 2.0 GHz High Associated Gain: 16.0 dB typical at 1.0 GHz

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

Contextual Info: HEW LETT-PA CKARD/ CHPNTS b lE » Thal H EW LETT • M4M75AM GOCHflb? 074 HHPA AT-60586 Up to 6 GHz Low Noise Silicon Bipolar Transistor 1 "MM P A C K A R D Features 86 Plastic Package • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz

AT-60586

Abstract: at60586 Silicon Bipolar Transistor 160 173 TRANSISTOR
Contextual Info: HEWLETT-PACKARD/ C MP NT S blE D MMM7SÔM O OC Hf l b ? 074 I HPA AT-60586 Up to 6 GHz Low Noise Silicon Bipolar Transistor WEM H E W L E T T WL'fiM P A C K A R D Features 86 Plastic Package • Low Bias Current Operation • Low Noise Figure: 1.4 dB typical at 1.0 GHz

AT60570

Abstract: at-60570 Silicon Bipolar Transistor AVANTEK transistor AVANTEK oscillator
Contextual Info: AVANTEK INC 20E D • 0AVANTEK HMlIfab QQGbSlb AT-60570 Up to 6 GHz Low Noise Silicon Bipolar Transistor 4 - Avantek 70 m il Package Features • • Low Bias Current O peration: Low Noise Figure: 1.8 dB typ ical at 2.0 G Hz 2.8 dB typ ical at 4.0 G Hz •

AT-60500

Abstract: at60500 transistor 45 f 123
Contextual Info: m AT-60500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip HEWLETT PACKARD Features • • • • Chip Outline1 Low Bias Current Operation Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.5 dB typical at 2.0 GHz

AT-60585

Abstract: AT60585 Silicon Bipolar Transistor Silicon Bipolar Transistor Hewlett-Packard 3BS transistor
Contextual Info: HE W LET T-PACKARD/ CMPNTS blE D • 44475Ö4 □ D D tìflb4 3bS H H P A AT-60585 Up to 6 GHz Low Noise Silicon Bipolar Transistor T h a t HEW LETT mLEM PA C K AR D 85 Plastic Package Features • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz