ASC 334 Search Results

CW20C104K

Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
Contextual Info: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,

Snubbers

Contextual Info: ASC 329/X329 IGBT Snubber Capacitors are designed for high demand environments as well as lower current applications. The 329 is a hybrid design combining self healing metallized film and foil to maintain very high peak and RMS currents. The X329 design utilizes only metallized film for applications

Contextual Info: Q UTM-1057 Thin-Film C asc ad ab le Amplifier 10 to 1000 MHz avantek FEATURES A P P L IC A T IO N S • Frequency Range: 10 to 1000 MHz • M O D A M P Silicon Monolithic Gain Stage s • High Gain: 27.0 d B Typ • Low V S W R • IF/RF Amplification D E SC R IP T IO N

Hitachi DSA00166

Abstract: Nippon capacitors
Contextual Info: HB56UW3273 Series 33554432-word x 72-bit High Density Dynamic RAM Module ADE-203-653 Z Preliminary Rev. 0.0 Sep. 6, 1996 Description The HB56UW3273 Series belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The

74LVT16244

Abstract: HB56UW3273E-6A HB56UW3273E-7A
Contextual Info: HB56UW3273 Series 33554432-word x 72-bit High Density Dynamic RAM Module ADE-203-653 Z Preliminary Rev. 0.0 Sep. 6, 1996 Description The HB56UW3273 Series belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The

74LVT16244

Abstract: HB56UW3273E-6A HB56UW3273E-7A HB56UW3273EJ-6A HB56UW3273EJ-7A Hitachi DSA00244 Nippon capacitors
Contextual Info: HB56UW3273E Series HB56UW3273EJ Series 33554432-word x 72-bit High Density Dynamic RAM Module ADE-203-653A Z Rev. 1.0 Jun. 18, 1997 Description The HB56UW3273E Series, HB56UW3273EJ Series belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor

2620 dynamic ram

Abstract: 74LVT16244 HB56UW3273E-6A HB56UW3273E-7A HB56UW3273EJ-6A HB56UW3273EJ-7A Hitachi DSA00200 Nippon capacitors
Contextual Info: HB56UW3273E Series HB56UW3273EJ Series 33554432-word x 72-bit High Density Dynamic RAM Module ADE-203-653A Z Rev. 1.0 Jun. 18, 1997 Description The HB56UW3273E Series, HB56UW3273EJ Series belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor

TRIAC ACS 12

Abstract: CDT3345-07
Contextual Info: 其朋半導體股份有限公司 Chip Design Technology Inc. 90 年 8 月 3 日 CDT3345-07 P. 1 四段輸入倒時定時器 IC • IC 打線腳座配置 2 LED ■ OSCO 14 CDT3345-07 4 BZ2 1670 X 1790 M 5 CDS TEST1 TEST2 VSS 6 ZC 13 OUT1 12 IC 底座接 VDD

Contextual Info: 其朋半導體股份有限公司 Chip Design Technology Inc. 90 年 8 月 3 日 CDT3345-03 P. 1 四段輸入倒時定時器 IC • IC 打線腳座配置 2 LED ■ OSCO 14 CDT3345-03 4 BZ2 1670 X 1790 M 5 CDS TEST1 TEST2 VSS 6 ZC 13 OUT1 12 IC 底座接 VDD

T2D 17 69

Contextual Info: PRELIMINARY MT2D T 132(X), MT4D(T)232(X) 1 MEG, 2 MEG x 32 DRAM MODULES I^ IIC R O N 1 MEG, 2 MEG x 32 DRAM MODULE 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO PAGE MODE FEATURES (DD-11) (DD-9) (DD-10) (DD-12) • T im in g 60n s access 70ns access • C o m p o n en ts

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Contextual Info: PRELIMINARY MICRON MT2D T 132(X), MT4D(T)232(X) 1 MEG, 2 MEG x 32 DRAM MODULES I DRAM 1 MEG, 2 MEG x 32 R J I A n i •■ C IV IU U U L E Z 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO p a g e m o d e FEATURES 72-Pin SIMM (DD-11) 1 Meg x 32 - TSOP version (shown)

CQX 86

Abstract: U832 write-verify RaR8 81 u218 A09T
Contextual Info: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

irf 3110

Abstract: IRF3503 irf350 IRf 334 IRf 92 0151 irf352 C055
Contextual Info: MOTOROLA SEM ICONDUCTOR IRF350 IRF351 IRF352 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS P o w e r FETs are d e sig n e d fo r h ig h voltage, high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regulators,

M5M418165

Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
Contextual Info: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16

AS4C4256

Abstract: MAS 10 RCD MT42C4256 mt42c4256 -8
Contextual Info: AS42C4256 883C 256K x 4 VRAM AUSTIN SEMICONDUCTOR, INC. VRAM 256K x 4 DRAM WITH 512 x 4 SAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883 28-Pin DIP (400 MIL) FEATURES • • • • • • • • • • Industry standard pinout, timing and functions

MT42C4256

Contextual Info: MT42C4256 883C 256K x 4 VRAM AUSTIN SEMICONDUCTOR, INC. Limited Supply - Consult Factory 256K x 4 DRAM WITH 512 x 4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89497 • MIL-STD-883 28-Pin DIP (400 MIL) FEATURES •

Contextual Info: 其朋半導體股份有限公司 Chip Design Technology Inc. 90 年 3 月 21 日 CDT3345-09 P. 1 四段輸入倒時定時器 IC • IC 打線腳座配置 2 LED 4 BZ2 1670 X 1790 M ZC 13 OUT1 12 IC 底座接 VDD VSS 6 OUT2 11 K1 7 K2 8 ■ 8 PIN DIP 包裝

x640

Contextual Info: Metallized Polyester AC Capacitors Types X637, X640 Formerly TRW-40, TRW-41 and TRW-42 series • • • • • • Applications Motor Run Speed Control Noise Filtering 220 To 460 Vac 50/60 Hz To 25.0 MFD These AC capacitors are constructed from metallized polyester film and otter small

IC CD 4440 pin diagram

Abstract: GZ150 MCM4L4400-70 MCM44400N70 MCM44400N-60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM44400 MCM4L4400 Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode The MCM44400 is a 0.8n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32200 MCM32L200 2M x 32 Bit Dynamic Random Access Memory Module T h e M C M 3 2 2 0 0 S ¡s a 64M , d y n a m ic ra n d o m acc e s s m e m o ry D R A M m odule o rg a n ize d as 2 ,0 9 7 .1 5 2 x 32 bits. T h e m odule is a 72-le a d d o u b le s id ed s in g le -in -lin e

mt4lc4m4e8dj-6

Contextual Info: 4 MEG x 4 EDO DRAM V U C Z R O N D R A M L /n # 4 IV I MT4LC4M4E8, MT4C4M4E8 MT4LC4M4E9, MT4C4M4E9 FEATURES PIN ASSIGNMENT (Top View OPTIONS 24/26-Pin SOJ (DA-2) V cc q 1 • DQ1 [ 2 DQ2 d 3 WE# : 4 RAS# : 5 NC/A11 c 6 A10 A0 A1 A2 A3 V cc c q : L q [ B

Contextual Info: February 1996 Edition 3.0 PRODUCT PROFILE SHEET FUJITSU = MB814400D-60/-70 CMOS 1 M X 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400D is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 4-bit increments. The MB814400D features a

Contextual Info: ^C A P A C I T O R S M etallized Polyester Capacitors Flame Retardant W rap A n d Fill Case • M o to r Run Physical Characteristics • S p eed C o n tro l C o n stru ction : • N o ise F ilte rin g Non-inductive w ound metallized poly­ ester. • 5 0 /6 0 H z