AS4 Search Results

AS4SD32M16

Contextual Info: SDRAM AS4SD32M16 512Mb: 32 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 32 Meg x 16 (8 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive

Contextual Info: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply

Contextual Info: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive

Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

Contextual Info: SDRAM AS4SD8M16 128 Mb: 8 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • • • • • • • • • • • • • • Full Military temp (-55°C to 125°C) processing available Copper lead frame option for enhanced reliability

Contextual Info: GaAs 1C SPDT Switch Reflective DC-6 GHz EHAlpha AS406R2-01, AS406R2-10 -01 Features • Independent Bias Control 0 .2 2 0 5 .5 9 m m ■ 0 .2 1 0 ( 5 .3 3 m m ) ■ Reflective, Short ■*— 0 .1 3 0 (3 .3 0 m m ) TYP. 0 .0 6 3 (1 .6 0 m m ) TYP. ■ 7 Lead Hermetic Package

2 way audio splitter circuit

Abstract: audio splitter circuit
Contextual Info: SERIAL DIGITAL AUDIO PASSIVE SIGNAL SPLITTER AS400M The AS400M Serial Digital Audio Passive Signal Splitter answers a demand from systems engineers for an economical way of dividing a single serial digital audio signal between two destinations. The modules are designed for in line use and, having no powered components, are as

Contextual Info: LM 49150 LM49150 Mono Class D A udio Subsystem with Earpiece Driver and StereoG round Referenced Headphone Am plifiers Texa s In s t r u m e n t s Literature Number: SN AS439B t í t i o n a LM49150 l Sem iconductor M arch 4, 2009 B O O m r Audio Power Am plifier Series

Contextual Info: LM 49321 LM49321 Audio Sub-System with Stereo DAC, Mono Class AB Loudspeaker Am plifier, OCL/SE Stereo Headphone O utput and RF Suppression Te x a s In s t r u m e n t s Literature Number: SN AS457B t Sem iconductor August 31, 2009 B O O m r Audio Power Am plifier Series

Contextual Info: AS4C1M16E5 A 5V 1Mx 16 CMOS DRAM EDO Features • Organization: 1,04 8 ,5 7 6 w ords x 16 bits • High speed • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 4 5 / 5 0 / 6 0 ns RAS access tim e - 2 0 / 2 0 / 2 5 ns hyper page cycle tim e

AS406M2-10

Abstract: AS406M2-01 SPDT FETs
Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–6 GHz AS406M2-01, AS406M2-10 Features -01 • Independent Bias Control 0.220 5.59 mm 0.210 (5.33 mm) ■ High Isolation, Non-Reflective 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP.

icl7071

Abstract: LM317 B1588 lm317 to92 ka3842 equivalent mc3842 ka3842 equivalent uc3842 B1115 LM317 sot23 mc3843a
Contextual Info: MANF. BAY Alpha Semi AS1115 AS1117 AS1580 AS1581 AS1582 AS1583 AS2431 AS2810 AS2815 AS2830 AS2850 AS2880 AS2930 AS2931 AS2950 AS2951 AS431 TL431 AS431C AS432 LP2950 LP2951 B1115 B1117 B1580 B1581 B1582 B1583 B3431 B1117 B1586 B1587 B1585 B1584 LM2930 LM2931

25CC

Abstract: IRFF210 IRFF213
Contextual Info: MOTOROLA SC XSTRS/R F la g D | b3b?aS4 OQflt.703 T | T -S f-Ö ? IRFF210 IRFF213 M AXIM UM RATIN GS Symbol IRFF210 IRFF213 Unit Drain-Source Voltage Vd s s 200 150 Vdc Drain-Gate Voltage R q s = 1.0 m il Vd g r 200 150 Vdc Rating Gate-Source Voltage + 20

AS4420P

Abstract: 1a07 AS4420 1L18 AS4429 AS4420S D256T 76x77 l18V as4429s
Contextual Info: High Speed MOSFET Drivers LLC AS4420 / AS4429 FEATURES • Latch Up Protected . . . . . . . . . . . . . . . . . . . . . . . . . >1.5A • Logic Input Swing . . . . . . . . . . . . . . . . . . . . . Negative 5V •ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4kV

Contextual Info: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp

Contextual Info: SDRAM AS4SD8M16 Austin Semiconductor, Inc. 8M x 16 SDRAM PIN ASSIGNMENT Top View SYNCHRONOUS DRAM MEMORY FEATURES • • • • • • • • Single 3.3V Power Supply Fully Synchronous to positive Clock Edge SDRAM CAS Latency = 2 (66 MHz), 3 (75 MHz or 83 MHz)

4C4M4EOQ-50JC

Abstract: 4C4M4EOQ-50TC 4C4M4EOQ-60JC 4C4M4EOQ-60TC AS4C4M4E1Q-50JC
Contextual Info: March 2001 AS4C4M4EOQ AS4C4M4E1Q 4M ✕ 4 CMOS QuadCAS DRAM EDO family Features • Organization: 4,194,304 words x 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption

AS4C1M16F5-60JC

Abstract: AS4C1M16F5-60JI AS4C1M16F5 AS4C1M16F5-60tc
Contextual Info: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (AS4C1M16E0-60)

A431

Abstract: astec ps A431D ASTEC SEMICONDUCTOR ASTEC AS431 TO 92 AS431 A431 sot89 tl a431 A431 Programmable Voltage Reference astec as431
Contextual Info: <x//x> AS431 ASTEC Precision Adjustable Shunt Reference Featu res D escription • Temperature-compensated: 30 ppm/°C The AS431 is a three-terminal adjustable shunt regulator providing a highly accurate 0.5% bandgap reference. The adjustable shunt regulator is ideal for a wide variety of linear

2N3972

Abstract: 2N3971 2n3970 2N3971 motorola
Contextual Info: M OTOROLA SC XSTRS/R F 15E D | b3b?aS4 QGät.bl7 5 | 2N3970 , thru 2N3972 CASE 22-03, STYLE 4 TO-18 TO-206AA 2 Drain MAXIMUM RATINGS R ating Drain-Source Voltage Sym bol Value U n it VDS 40 Vdc Vdc Vdg 40 V g SR 40 Vdc Forward Gate C urrent •g f 50 m A dc

MTP8N45

Contextual Info: MOTOROLA SC XSTRS/R D I• b3b?as4 aoâibîB a ime F I T-ÌÌ-I3 MOTOROLA ■ I SEM ICO NDUCTO R TECHNICAL DATA IRF340 Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF340 V d SS 400 V rDS on >D 0.55 n 10 A This TM O S Power FET is designed for high voltage, high speed

mad1109p

Abstract: MAD1109F
Contextual Info: MQTORCLA SC M A X IM U M RATINGS XSTRS/R F 12E D I bBb?as4 GoataaG a I T -H '0 7 MAD1109 {@ 25°C Free-Air Temperature unless otherwise noted. Rating Sym b o l Value Unit V RM 50 Vdc Steady-State Reverse Voltage Vr 40 Vdc Peak Forward Current at {or below) 25eC Free-Air

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

Contextual Info: ALPHA SEMICONDUCTOR Excellence in Analog Power Products AS431L Low Voltage Precision Adjustable Shunt Regulator FEATURES • • • • • • • APPLICATIONS • • • • • • • Tight Tolerance. 0.5% @ 1%