AS006M1 Search Results

Contextual Info: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16

Contextual Info: GaAs MMIC SPST FET Switch iSAIphi Non-Reflective DC-6 GHz AS006M1-01, AS006M1-10, AS004M1-08, AS004M1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ High Isolation ■ 3 Nanosec Rise/Fall Time ■ Low D.C. Power Consumption

GND23

Contextual Info: GaAs MMIC SPST FET Switch Chip DC-6 GHz ESAlpha AS006L1-00, AS006M1-00, AS006R1-00 Features • Multiple Use Options: Low Loss Reflective, High Isolation Non-Reflective, High Isolation Reflective ■ Broadband D C -6 G H z ■ 3 ns Rise/Fall Time ■ Low DC Power Consumption

Contextual Info: GaAs 1C SPST Switch Non-Reflective DC-6 GHz ESAlpha AS006M1-01, AS006M1-10 Features • Low DC Power Consumption -01 0.220 5.59 mm ■ 0.210 (5.33 mm) ■ High Isolation, Non-Reflective ■ 7 Lead Hermetic Package -0 .1 3 0 (3.30 mm) TYP. 0.063 (1.60 mm) TYP.

AS006m1 datasheet

Abstract: AS006L1-00 AS006M1-00 AS006R1-00 High Isolation Reflective Switch
Contextual Info: Preliminary GaAs MMIC SPST FET Switch Chip DC–6 GHz AS006L1-00, AS006M1-00, AS006R1-00 1.170 1.044 • Excellent Intermodulation Products/Temperature Stability 0.772 0.100 ■ Multiple Use Options 0.533 Chip Outline 0.225 Features 1.143 1.038 ■ 100% On-Wafer DC Testing

Contextual Info: GaAs MMIC SPST FET Switch Chip DC-6 GHz ESAlpha AS006L1-00, AS006M1-00, AS006R1-00 Chip Outline F eat ur e s • Multiple Use Options o ■ Excellent Interm odulation Products/Temperature Stability o o o ■ 100% On-W afer DC Testing ■ 100% Visual Inspection of M IL-STD-883

Contextual Info: GaAs 1C SPST Switch Non-Reflective DC-6 GHz EBAlpha AS006M1-01, AS006M1-10 -01 Features • Low DC Power Consumption 0.220 5.59 mm • 0.210(5.33 mm) ■ High Isolation, Non-Reflective ■ 7 Lead Hermetic Package ■•-0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP.

AS006M1-10

Abstract: AS006M1-01
Contextual Info: GaAs IC SPST Switch Non-Reflective DC–6 GHz AS006M1-01, AS006M1-10 Features -01 • Low DC Power Consumption 0.220 5.59 mm 0.210 (5.33 mm) ■ High Isolation, Non-Reflective ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. 0.130 (3.30 mm) TYP.

Contextual Info: GaAs SPST IC FET Switch Non-Reflective DC–6 GHz AS006M1-93 Features -93 • Low DC Power Consumption 0.160 0.140 ■ High Isolation, Non-Reflective ■ Broadband DC–6 GHz 0.100 ■ Excellent Intermodulation Products 0.060 ■ Small Low Cost “Chip on Board” Package

Contextual Info: | 11*j:£§ •i'x/ GaAs SPST 1C FET Switch Non-Reflective DC-6 GHz ESAlpha AS006M1-93 Features -93 ■ Low DC Power Consumption ■ High Isolation, Non-Reflective ■ Broadband D C -6 GHz ■ Excellent Intermodulation Products ■ Small Low Cost “Chip on Board” Package

Contextual Info: GaAs SPST 1C FET Switch Non-Reflective DC-6 GHz ESAlpha AS006M1-93 F ea t ur e s • Low DC Power Consumption -93 ■ High Isolation, Non-Reflective ■ Broadband D C -6 GHz ■ Excellent Intermodulation Products ■ Small Low Cost “Chip on Board” Package

Contextual Info: GaAs 1C SPST Switch Non-Reflective DC-6 GHz ESAlpha AS006M1-01, AS006M1-10 F ea t ur e s • Low DC Power Consumption -01 0.220 5.59 mm ■ 0.210 (5.33 mm) ■ High Isolation, Non-Reflective ■ 7 Lead Hermetic Package ■0.130 (3.30 mm) TYP. 0.130 (3.30 mm) TYP.

fet ft 25 GHZ

Abstract: fet ft 30 GHZ
Contextual Info: Preliminary GaAs SPST 1C FET Switch Non-Reflective DC-6 GHz EBAlpha AS006M1-93 Features • Low DC Power Consumption -93 ■ High Isolation, Non-Reflective ■ Broadband DC-6 GHz ■ Excellent Intermodulation Products ■ Small Low Cost “Chip on Board” Package

Contextual Info: Preliminary GaAs MMIC SPST FET Switch Chip DC-6 GHz ESAlpha AS006L1-00, AS006M1-00, AS006R1-00 Features Chip Outline • Multiple Use Options ■ Excellent Intermodulation Products/Temperature Stability ■ 100% O n-W afer DC Testing ■ 100% Visual Inspection of M IL -S T D -883

Contextual Info: GaAs MMIC SPST FET Switch Non-Reflective DC-6 GHz E£A$g|« AS006M1-01, AS006M1-10, AS004M1-08, AS004M1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ High Isolation ■ 3 Nanosec Rise/Fall Time ■ Low D.C. Power Consumption

SN6337

Contextual Info: GaAs SPST IC FET Switch Non-Reflective DC–6 GHz AS006M1-93 Features -93 • Low DC Power Consumption 0.160 0.140 ■ High Isolation, Non-Reflective ■ Broadband DC–6 GHz 0.100 ■ Excellent Intermodulation Products 0.060 ■ Small Low Cost “Chip on Board” Package

Contextual Info: GaAs SPST IC FET Switch Non-Reflective DC–6 GHz AS006M1-93 Features -93 • Low DC Power Consumption 0.160 0.140 ■ High Isolation, Non-Reflective ■ Broadband DC–6 GHz 0.100 ■ Excellent Intermodulation Products 0.060 ■ Small Low Cost “Chip on Board” Package

DSB3665-02

Contextual Info: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C

Contextual Info: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies

Contextual Info: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■

Contextual Info: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■

Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias