S006M Search Results

Contextual Info: Ordering number: ENN6961 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features Package Dimensions • C om posite type with a P-C hannel Sillicon M O SFE T unit : mm M C H 3308 and a Schottky B arrier D iode (SB S006M ) 2 1 9 5 contained in one package facilitating high-density

Contextual Info: GaAs MMIC SPST FET Switch Chip DC-6 GHz ESAlpha AS006L1-00, S006M1-00, AS006R1-00 Chip Outline F eat ur e s • Multiple Use Options o ■ Excellent Interm odulation Products/Temperature Stability o o o ■ 100% On-W afer DC Testing ■ 100% Visual Inspection of M IL-STD-883

Contextual Info: Prelim inary GaAs 1C SPDT Switch Non-Reflective DC-6 GHz EBAlpha S006M2-93 Features *93 • Low DC Power Consumption ■ High Isolation, Non-Reflective ■ Broadband D C -6 GHz ■ Excellent Intermodulation Products ■ Small Low Cost “Chip on Board” Package

Contextual Info: GaAs 1C SPST Switch Non-Reflective DC-6 GHz EBAlpha S006M1-01, S006M1-10 -01 Features • Low DC Power Consumption 0.220 5.59 mm • 0.210(5.33 mm) ■ High Isolation, Non-Reflective ■ 7 Lead Hermetic Package ■•-0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP.

Contextual Info: GaAs MMIC SPST FET Switch Chip DC-6 GHz ESAlpha AS006L1-00, S006M1-00, AS006R1-00 Features Chip Outline • Multiple Use Options o ■ Excellent Intermodulation Products/Temperature Stability o o o o o ■ 100% On-Wafer DC Testing ■ 100% Visual Inspection of MIL-STD-883