AS006R2-01
Abstract: AS006R2-10
Text: GaAs IC SPDT Switch Reflective DC–6 GHz AS006R2-01, AS006R2-10 Features -01 • Low DC Power Consumption 0.220 5.59 mm 0.210 (5.33 mm) ■ High Isolation, Reflective 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP.
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AS006R2-01,
AS006R2-10
AS006R2-01
AS006R2-10
9/99A
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AS00R2-00
Abstract: GaAs IC SPDT
Text: GaAs IC SPDT Switch Chip DC–6 GHz With Independent Bias Control AS006R2-00, AS006M2-00 Features • Independent Bias Control of Series and Shunt FETs ■ Non-Reflective or Reflective Option Chip Outline 0.045 1.14 mm 0.041 (1.04 mm) 0.033 (0.83 mm) ■ Excellent Intermodulation and
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AS006R2-00,
AS006M2-00
AS006R2-00
AS006M2-00
8/01A
AS00R2-00
GaAs IC SPDT
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT Switch Chip DC-6 GHz With Independent Bias Control EBAlpha AS006R2-00, AS006M2-00 Features Chip Outline • Independent Bias Control of Series and Shunt FETs CM 00 IT CM CO to in to Ò Ö ■ Non-Reflective or Reflective Option ■ Excellent Intermodulation and
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AS006R2-00,
AS006M2-00
AS006R2-00
AS006M2-00
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs MM1C SPDT FET Switch 0 3 Alpha Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 G H z ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation Product\Temp. Stability
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AS006R2-01,
AS006R2-10,
AS004R2-08,
AS004R2-11
AS004R2-11
AS006R2-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■
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AS006R2-01,
AS006R2-10,
AS004R2-08,
AS004R2-11
AS004R2â
AS006R2â
AS006R2-01)
AK006L1-01
AS004M2-11
AT002N5-00
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT Switch Reflective DC-6 GHz ESAlpha AS006R2-01, AS006R2-10 Features -01 • Low DC Power Consumption 0.220 5.59 mm 0.210 (5.33 mm) « •-0 .1 3 0 (3.30 mm) TYP. ■ High Isolation, Reflective 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package
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AS006R2-01,
AS006R2-10
AS006R2-01
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT Switch Reflective DC-6 GHz EBAlpha AS006R2-01, AS006R2-10 -01 Features • Low DC Power Consumption 0.220 5.59 mm ■ 0.210 (5.33 mm) -0 .1 3 0 (3.30 mm) TYP. ■ High Isolation, Reflective 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0 .1 3 0 (3 .3 0 mm) TYP.
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AS006R2-01,
AS006R2-10
AS006R2-01
AS006R
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT Switch Reflective DC-6 GHz ESAlpha AS006R2-01, AS006R2-10 -01 F eat ur e s • Low DC Power Consumption 0 .2 2 0 5 .5 9 m m ■ 0 .1 3 0 (3 .3 0 m m ) TYP. 0 .2 1 0 (5 .3 3 m m ) ■ High Isolation, Reflective 0 .1 3 0 (3 .3 0 m m ) TYP. 0 .0 6 3 (1 .6 0 m m ) TYP.
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AS006R2-01,
AS006R2-10
AS006R2-01
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT Switch Chip DC-6 GHz With Independent Bias Control ESAlpha AS006R2-00, AS006M2-00 F eat ur e s • Independent Bias Control of Series and Shunt FETs Chip Outline CM h* t - h- co lo c\j co lo d o .O O r-»- lo un to co Is»; o d o i— d o co
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AS006R2-00,
AS006M2-00
AS006R2-00
AS006M2-00
3/99A
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SPDT FETs
Abstract: High Isolation Reflective SPDT Switch High Isolation Reflective Switch 5v
Text: GaAs MMIC SPDT FET Switch Chip DC-6 GHz With Independent Bias Control EHAlpha AS006R2-00, AS006M2-00 Features • Individual Bias Control of Series and Shunt FETs ■ Broadband DC to 6 GHz ■ High Isolation ■ Non-Reflective or Reflective Short or Open
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AS006R2-00,
AS006M2-00
AS006R2-00
AS006M2-00
SPDT FETs
High Isolation Reflective SPDT Switch
High Isolation Reflective Switch 5v
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch Chip DC-6 GHz With Independent Bias Control AS006R2-00, AS006M2-00 Features • Individual Bias Control of Series and Shunt FETs ■ Broadband DC to 6 G H z ■ High Isolation ■ N on-Reflective or Reflective Short or Open ■
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AS006R2-00,
AS006M2-00
AS006R2-00
AS006M2-00
FET4R2-11
AS006L1-00
AS006L1--
AS006L1
AS006L2-00
AS006L2-01
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Untitled
Abstract: No abstract text available
Text: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16
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AD004T2-00
AD004T2-11
AE002M2-29
AE002M4-05
AH002R2-11
AK002D2-11
AK002D4-11
AK002D4-31
AK002M4-00
AK002M4-31
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DSB3665-02
Abstract: No abstract text available
Text: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C
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DSB3665-01,
DSB3665-02,
DSB3667-01
DSB3665
DSB3667
ch8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
DSB3665-02
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies
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AP103-64
SOIC16
AP103-64
ce8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
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Untitled
Abstract: No abstract text available
Text: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control
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AS103-59
AS103-59
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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Untitled
Abstract: No abstract text available
Text: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C
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AA038P1-00
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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Untitled
Abstract: No abstract text available
Text: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias
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AH002R2-12
maxi-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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SMS1526-10
Abstract: No abstract text available
Text: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity
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AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
AK006M1-01
SMS1526-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages
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AS358-62
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability
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AS006M2-01,
AS006M2-10,
AS004M2-08,
AS004M2-11
AS006M2-10
MIL-STD-883
AK006L1-01
AT002N5-00
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ^A Low Differential Phase Between Paths Meets M IL -S T D -88 3 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description The A D 004T2-00 is a GaAs 4 Port FET switch
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AD004T2-00,
AD004T2-11
004T2-00
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
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AF002C1-32
Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Text: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:
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AF002C1-32
AF002C1-32
AF002C1-39
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
E 212 fet
AS006M2-10
AD004T2-00
AD004T2-11
AK006R2-01
AS006M1-01
S443
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AS117-45
Abstract: AD004T2-00 AK006R2-01
Text: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 Alpha t v ■,. : v r - r ^ - .n I ^w A S 11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control
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FET10
AS117-45
DC-2000
DC-1000
04M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AD004T2-00
AK006R2-01
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pin diode limiter
Abstract: MMIC limiter AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Text: gQAIpl Switch and Limiter Modules CSB7003-02 Features Stripline Mount Shunt Mounted Limiter in 50£2 Line Switch and Limiter Functions through 18 GHz Description This series of modules consists of a single PIN diode shunt mounted in a 50£2 hermetically sealed package.
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CSB7003-02
CSB7003-02.
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
pin diode limiter
MMIC limiter
AD004T2-00
AD004T2-11
AE002M2-29
AK006R2-00
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
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