AS006R Search Results

Contextual Info: GaAs 1C SPDT Switch Chip DC-6 GHz With Independent Bias Control EBAlpha AS006R2-00, AS006M2-00 Features Chip Outline • Independent Bias Control of Series and Shunt FETs CM 00 IT CM CO to in to Ò Ö ■ Non-Reflective or Reflective Option ■ Excellent Intermodulation and

Contextual Info: GaAs MM1C SPDT FET Switch 0 3 Alpha Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 G H z ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation Product\Temp. Stability

Contextual Info: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■

Contextual Info: GaAs 1C SPDT Switch Reflective DC-6 GHz ESAlpha AS006R2-01, AS006R2-10 Features -01 • Low DC Power Consumption 0.220 5.59 mm 0.210 (5.33 mm) « •-0 .1 3 0 (3.30 mm) TYP. ■ High Isolation, Reflective 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package

GND23

Contextual Info: GaAs MMIC SPST FET Switch Chip DC-6 GHz ESAlpha AS006L1-00, AS006M1-00, AS006R1-00 Features • Multiple Use Options: Low Loss Reflective, High Isolation Non-Reflective, High Isolation Reflective ■ Broadband D C -6 G H z ■ 3 ns Rise/Fall Time ■ Low DC Power Consumption

Contextual Info: GaAs 1C SPDT Switch Reflective DC-6 GHz EBAlpha AS006R2-01, AS006R2-10 -01 Features • Low DC Power Consumption 0.220 5.59 mm ■ 0.210 (5.33 mm) -0 .1 3 0 (3.30 mm) TYP. ■ High Isolation, Reflective 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0 .1 3 0 (3 .3 0 mm) TYP.

Contextual Info: GaAs 1C SPDT Switch Reflective DC-6 GHz ESAlpha AS006R2-01, AS006R2-10 -01 F eat ur e s • Low DC Power Consumption 0 .2 2 0 5 .5 9 m m ■ 0 .1 3 0 (3 .3 0 m m ) TYP. 0 .2 1 0 (5 .3 3 m m ) ■ High Isolation, Reflective 0 .1 3 0 (3 .3 0 m m ) TYP. 0 .0 6 3 (1 .6 0 m m ) TYP.

AS006m1 datasheet

Abstract: AS006L1-00 AS006M1-00 AS006R1-00 High Isolation Reflective Switch
Contextual Info: Preliminary GaAs MMIC SPST FET Switch Chip DC–6 GHz AS006L1-00, AS006M1-00, AS006R1-00 1.170 1.044 • Excellent Intermodulation Products/Temperature Stability 0.772 0.100 ■ Multiple Use Options 0.533 Chip Outline 0.225 Features 1.143 1.038 ■ 100% On-Wafer DC Testing

Contextual Info: GaAs 1C SPDT Switch Chip DC-6 GHz With Independent Bias Control ESAlpha AS006R2-00, AS006M2-00 F eat ur e s • Independent Bias Control of Series and Shunt FETs Chip Outline CM h* t - h- co lo c\j co lo d o .O O r-»- lo un to co Is»; o d o i— d o co

Contextual Info: GaAs MMIC SPST FET Switch Chip DC-6 GHz ESAlpha AS006L1-00, AS006M1-00, AS006R1-00 Chip Outline F eat ur e s • Multiple Use Options o ■ Excellent Interm odulation Products/Temperature Stability o o o ■ 100% On-W afer DC Testing ■ 100% Visual Inspection of M IL-STD-883

AS006R2-01

Abstract: AS006R2-10
Contextual Info: GaAs IC SPDT Switch Reflective DC–6 GHz AS006R2-01, AS006R2-10 Features -01 • Low DC Power Consumption 0.220 5.59 mm 0.210 (5.33 mm) ■ High Isolation, Reflective 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP.

SPDT FETs

Abstract: High Isolation Reflective SPDT Switch High Isolation Reflective Switch 5v
Contextual Info: GaAs MMIC SPDT FET Switch Chip DC-6 GHz With Independent Bias Control EHAlpha AS006R2-00, AS006M2-00 Features • Individual Bias Control of Series and Shunt FETs ■ Broadband DC to 6 GHz ■ High Isolation ■ Non-Reflective or Reflective Short or Open

Contextual Info: GaAs MMIC SPDT FET Switch Chip DC-6 GHz With Independent Bias Control AS006R2-00, AS006M2-00 Features • Individual Bias Control of Series and Shunt FETs ■ Broadband DC to 6 G H z ■ High Isolation ■ N on-Reflective or Reflective Short or Open ■

AS00R2-00

Abstract: GaAs IC SPDT
Contextual Info: GaAs IC SPDT Switch Chip DC–6 GHz With Independent Bias Control AS006R2-00, AS006M2-00 Features • Independent Bias Control of Series and Shunt FETs ■ Non-Reflective or Reflective Option Chip Outline 0.045 1.14 mm 0.041 (1.04 mm) 0.033 (0.83 mm) ■ Excellent Intermodulation and

Contextual Info: GaAs MMIC SPST FET Switch Chip DC-6 GHz ESAlpha AS006L1-00, AS006M1-00, AS006R1-00 Features Chip Outline • Multiple Use Options o ■ Excellent Intermodulation Products/Temperature Stability o o o o o ■ 100% On-Wafer DC Testing ■ 100% Visual Inspection of MIL-STD-883

Contextual Info: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16

DSB3665-02

Contextual Info: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C

Contextual Info: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies

Contextual Info: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■

Contextual Info: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias

SMS1526-10

Contextual Info: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity

Contextual Info: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages