ARA HF Search Results

Contextual Info: KSC5020 NPN SILICON TRANSISTOR HIGH VOLTAGE, HIGH QUALITY HIGH SPPED SWITCHING: t =0.1MS • WIDE SOA ABSOLUTE MAXIMUM RATINGS C h ara c te ristic Sym bol C ollector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC Collector Current (Pulse)

transistor c 3228

Abstract: LI-01/transistor k 0247
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES_ • HIGH G AIN B A NDW IDTH PRODUCT: fT = 8.5 G Hz TYP • HIGH SPEED SW ITC H IN G CH ARA CTERISTICS • NPN C O M PLIM EN T AVA ILAB LE: NE68133 • HIGH IN SERTIO N PO W ER GAIN:

Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES_ • HIGH G AIN B A NDW IDTH PRODUCT: fT = 5.5 G Hz TYP • HIG H SPEED SW ITCH IN G CH ARA CTERISTICS • NPN C O M PLIM EN T AVA ILAB LE: NE02133 • HIG H INSERTIO N PO W ER GAIN:

2sa937

Abstract: 2SA937ALN
Contextual Info: 2SA937ALN/2SA937AMLN h "7 > 's 7 * $ /Transistors 2SA937ALN 2 S A 9 3 7 A M L N Epitaxial Planar PNP Silicon Transistors Ew*ara/fl/Low Freq. Low Noise Amp. • W fi’tfSiia/'Dim ensions Uni! : mm 1) N F = 0 .5 d B (Typ.) (V c e = - 5 V , l c = — 100 m A,

D1832

Abstract: transistor d1832 D1832 TRANSISTOR d 1832 B1292 B-1292
Contextual Info: 2SB1292 2SB1832 Transistors I Power Transistor —60V, —5A 2SB1292 •F e a tu re s 1 ) Low V cE (saf)- (Typ.-—0.3V a t 1c /I b = — 3 /—0.3A) •A b s o lu te maximum ratings (T a = 2 5 =C ) P ara m e te r 2 ) Excellent D C current gain characteristics.

NFE 02 352

Abstract: 131H BUT131 BUT131A BUT131H L100 82S2 BUT13 BUT31
Contextual Info: [ [ bbS3T31 DEVELOPMENT DATA O G lflflb ? X T h is data sheet contains advance Inform ation and specifications ara subject to change w ith o u t notice. □ • BUT131 SERIES T - 3 3 - / â N AMER PHILIPS/DISCRETE 5SE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope intended for use

Contextual Info: PD-2.464 International S Rectifier HEXFRED" HFA70NC60C Ultrafast, Soft Recovery Diode V r = 600V F e a tu r e s R e d uce d RFI and EMI V F = 1.5V R e d uce d S n u b b in g Extensive C ha racte riza tion o f R ecovery P ara m e te rs Q rr * = 520nC d i r e c M /d t

Contextual Info: PD-2.473 International S Rectifier HEXFRED" HFA80NC40C Ultrafast, Soft Recovery Diode F e a tu r e s V r = 400V R e d uce d RFI and EMI V F = 1.3V R e d uce d S n u b b in g Extensive C ha racte riza tion o f R ecovery P ara m e te rs Q rr * = 500nC d i r e c M /d t

Contextual Info: H ITACH I 2SA1190, 2SA1191 S LI CON PNP EP|-A>iAt LOW FREQtJENt-r LOWNQiSg AMPUHgH Gointyi«fA6r*ary w vrfh 3SC8BSS ara $80385$ Jm r B > * tk / i ¿i.» «; Î C-il«rw r S. feSiM v'tw iitM i vi rtmt i ÍJÍO EC TO-92Í • ASSOLUTE MAXIMUM ftA ÏW G S {t*-:s 'X 1

BSY87

Abstract: BSY90 1133B 1128G 2n2388 1136G BSY56 BSY51 BSY54 BSY55
Contextual Info: ITT Sem iconductors NPN Transistors N P N Silico n General Purpose Amplifiers and Sw itches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800m W @ 25'C. O u tlin e D ra w in g N o. 66 ap p lie s. REFEREN CE T A B L E C h ara cte ristics @ M ax . rating«

MG75G6EL1

Contextual Info: MG75G6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L APP LICATIONS. . The C o l l e c t o r is Isolated f r o m Case. . 6 D a r l i n g t o n T r a n s i s t o r s ara B u i l t - i n to

CEDWF2D222M4

Abstract: RTM 866 984 Series
Contextual Info: ìcH^r U N I T E D C H E M I- C O N S U B S I D I A R I E S OF N I P P ALUMINUM ELECTROLYTIC CAPACITORS CEDWF SERIES O N C H E M I - C O N , I N C CEDWF SERIES SNAP-IN TERMINALS FOR +85°C OPERATION • FEATURES 1. S m aller than A W F series. 2. 85°C , 2 0 0 0 h o u rs g u ara n te ed

EEG Project with circuit diagram

Abstract: s448 circuit cellar
Contextual Info: FEATURE ARTICLE Jim Sibigtroth Fuzzy Logic for Embedded Microcontrollers logic as a h e lp fu l to o l a n d u ses it. T h e y regard th e d iffic u ltie s of th e n o m e n c la ­ tu re a s a se p ara te p ro b le m . Sin ce th e te rm " fu z z y " h as n e g a tiv e c o n n o ta ­

MRF406

Abstract: MRF406 MOTOROLA 20WPEP
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 20 W PEP - 3 0 M H z RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . . designed p r im a r ily fo r a p p lic a tio n as a pow er lin e a r a m p lifie r fro m 2 .0 to 30 M Hz. • S p e cifie d 12.5 V o lt, 3 0 M H z C h ara cteristics O u tp u t Power = 20 W ÌPEP)

TIP146T

Contextual Info: PNP EPITAXIAL SILICO N DARLINGTON TRANSISTO R TIP145T/146T/147T HIGH DC CU RREN T GAIN - MIN hFE = 1000 @ Vce = -4V, IC = -5 A TO-220 M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S I S T O R S IN D U S T R IA L U S E Com plem ent to T IP140T/141T/142T

6DI75A-050

Abstract: M603 T151 T930 t460 transistor 6DI75A
Contextual Info: 6DI75A-050 75a ä ± / '* I Outline Drawings POWER TRANSISTOR MODULE • ¡ t t S : Features • 7 ' j — Jfc-f *J > • hFE*'“* ^ • tëlÊlfc Jfr — KrtSfe In c lu d in g Free W h e e lin g D iode H igh DC C u rrent Gain Insu lated Type ■ ffliÊ : Applications

Contextual Info: M ITSU B ISH I HF POW ER M ODULE M57704SL 360-380MHZ, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM CïHhL l“ P > H H S> PIN : Pin : RF INPUT ©VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY @VCC3 : 3rd. DC SUPPLY ®P0 ; RF OUTPUT ©GND : FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 T unless otherwise noted)

Contextual Info: 2SC4784 Silicon NPN Bipolar Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 2 1. E m itter

X32B

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 141543 Product Preview Advanced M onitor O n-Screen Display P SUFFIX PLASTIC PACKAGE CASE 648-08 CMOS T h is is a high perfo rm a n ce H C M O S device designed to interface w ith a m icrocontroller unit to allow colored sym bols or characters to be displayed on a

Contextual Info: SPT SIGNAL PROCESSING TECHNOLOGIES SPT9 4 0 1 TRIPLE VIDEO DRIVER WITH RGB OUTPUT ADVANCED INFORMATION FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Triple Video Line Driver Chip with RGB Inputs R|_=150 £1 75 Q. Back-Terminated Cable

Contextual Info: R C H II_ D EM ICONDUCTQ R r 74ACQ573 • 74ACTQ573 Quiet Series Octal Latch with 3-STATE Outputs General Description Features The ACQ/ACTQ573 is a high-speed octal latch with buffered common Latch Enable LE and buffered common Output Enable (OE) inputs. The ACQ/ACTQ573 is functionally iden­

ic b 0347

Abstract: ah dsc hex tv 1F 10pin zt 213 MH16S72DDFA-7 MH16S72DDFA-8
Contextual Info: Preliminary Spec. MITSUBISHI LSls Some contents are subject to change w ithout notice. MH16S72DDFA-7, -8 1,207,959,552-BIT 16,777,216-W O RD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH16S72DDFA is 16777216 - word x 72-bit Synchronous DRAM module. This consist of eighteen

Contextual Info: Panasonic Other MOS LSIs MN6557A, MN6557AS Low-Power-Consumption CMOS 10-Bit D/A Converters for Image Processing • Overview ■ Pin Assignment The MN6557A and MN6557AS are CMOS 10-bit D/A converters with a maximum conversion rate of 30 MSPS. High precision has been achieved by the combined use

Contextual Info: | SANKEN ELECTRIC CO LTD 55E » • TTTDTMl 0D01G24 07H « S A K Ü Silicon N P N Triple Diffused Planar 2SD2082 ☆D a rlin g to n ■¿¡•Complement to type 2SB1382 A pplication Example: Driver for Solenoid, Relay and M otor, and General Purpose • Outline Drawing 5 . .FM100