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    APT6040BVR Search Results

    APT6040BVR Datasheets (1)

    Microsemi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    APT6040BVR
    Microsemi Power MOS V MOSFET Original PDF 58.71KB 4
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    APT6040BVR Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc APT6040BVRG

    Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME APT6040BVRG 1
    • 1 $157.20
    • 10 $123.67
    • 100 $123.67
    • 1000 $123.67
    • 10000 $123.67
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    APT6040BVR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: APT6040BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 6oov i6 a o.4oon POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT6040BVR O-247 MIL-STD-750 O-247AD PDF

    Contextual Info: APT6040BVR APT6040SVR 600V 16A 0.400Ω Ω BVR POWER MOS V D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT6040BVR APT6040SVR O-247 O-247 PDF

    Contextual Info: • R A dvanced W .\A p o w e r Te c h n o lo g y “ APT6040BVR 600v i6a 0.400Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    APT6040BVR O-247 PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Contextual Info: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


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