APT10M Search Results

isotop mosfet 100V

Abstract: APT10M11JVRU2
Contextual Info: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

APT10M13JNR

Contextual Info: A dvanced P o w er Te c h n o lo g y APT10M13JNR 100V 150A 0.013Û APT10M15JNR 100V 140A 0.015Ü ISOTOP® "UL Recognized" File No. E145592 S POWER MOS IV« AVALANCHE RATED ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS

APT10M11LVR

Contextual Info: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10M11JVR 0.011Ω 100V 144A POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10M20BLL APT10M20SLL 100V 92A 0.020W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Q100A

Abstract: APT10M25BNR
Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT10M25BNR 100V APT10M30BNR 100V POWER MOS IV' 75A 75A 0.025Í1 0.030Q AVALANCHE RATED N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIM UM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

APT10M25BVR

Contextual Info: APT10M25BVR 75A 0.025Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

APT10M25SVR

Contextual Info: APT10M25SVR 75A 0.025Ω 100V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch

Contextual Info: A dvanced P o w er Te c h n o l o g y APT10M25BNFR APT10M30BNFR POWER MOS IV‘ 100V 75A 0.025Q 100V 75A 0.030Q AVALANCHE RATED FREDFET N -C H A NN EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT10M25SVR 75A 0.025Ω 100V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT10M30AVR

Contextual Info: APT10M30AVR 65A 0.030Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Contextual Info: ADVAN CED P o w er Te c h n o l o g y APT10M07JVR 100V ' 225A 0.007a POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

MOSFET Module 100v 1000A

Abstract: APT10M11JVRU3 SOT-227 heatsink
Contextual Info: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon

kd 503

Contextual Info: ADVANCED PO W ER Te c h n o l o g y " o D O APT10M25BNR 100V APT10M30BNR 100V S 75A 0.02511 67A 0.030Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DS= All Ratings: T c = 2 5 °C unless otherwise specified.

PT10M

Contextual Info: A d vanced P o w er m T tz r*u td fii flß y APT10M13JNR 100V 150A 0.013ft APT10M15JNR 100V 140A 0.015ft IS O T O P 1 POWER MOS IV‘ J Ç ^ " U L R ecognized" File No. E145592 S AVALANCHE RATED ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS

Contextual Info: APT10M25BVR • R A dvan ced W /Æ PO W ER Te c h n o l o g y ' io o v 75a 0 .0 25Q POWER MOS V‘ Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

APT10M07JVFR

Contextual Info: APT10M07JVFR Ω 100V 225A 0.007Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT10M19BVR

Contextual Info: APT10M19BVR 75A 0.019Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

APT10M11B2VFR

Abstract: TF6646 APT10M11LVFR
Contextual Info: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

APT10M07JVFR

Contextual Info: APT10M07JVFR Ω 100V 225A 0.007Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A dvanced P o w er Tec h n o lo g y APT10M25BNFR APT10M30BNFR POWER MOS IVe 0.025a 100V 75A 100V 75A 0.030Í2 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.