AOT 128 Search Results

AOT-0603P-B01A

Abstract: AOT-0603P-B01AZ AOT0603P-B01-V 10E10 10E4 10E6 10E8 3050B aot-0603p diode 47-16
Contextual Info: APPROVAL SHEET AOT MODEL NAME AOT PART NUMBER CUSTOMER NAME DATE VERSION MAKER Prepared SMD LED : Blue Color AOT-0603P-B01AZ General Customer 2005/June 2 CUSTOMER Checked Approved AOT HEAD QUARTER No. 13, Gongye 5th. Road, Hsinchu Industrial Park, Hukou Shiang,

AOT260L

Contextual Info: AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT B 260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of

aot 128

Contextual Info: AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT B 260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of

AOB260L

Contextual Info: AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT B 260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of

Contextual Info: AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT B 260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of

AOT 127A

Abstract: aot 127 aot 128 AOT474 AOTF474
Contextual Info: AOT474/AOTF474 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOT F 474/L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low R DS(ON) and excellent

Contextual Info: TRM5712AN OC-12 Transmitter Description The TRM5712AN is a lightwave transmitter for OC-12. Features • Complied with SONET/SDH standard • Fabry-Perot laser diode • Operation from IMb/s to 622.08Mb/s at 1.3 |am wavelength • 50Î2, AC-coupled interface

BUZ24

Contextual Info: SIEMENS SIPMOS Power Transistor • • • BUZ 24 N channel Enhancem ent mode Avalanche-rated Type In s BUZ 24 100 V I 'd 32 A ^DS on P a c k a g e 1> Ordering Code 0.06 i i TO-204 AE C 67078-S 1003-A2 Maxim um Ratings Sym bol Parameter Continuous drain current, Tc = 27 "C

TDA 4400

Abstract: TDA4400 4410 Demodulator 4410 8 pin TC 4410 TDA4410 tda video
Contextual Info: TDA 4400 • TDA 4410 'W Monolithisch Integrierte Schaltung Monolithic Integrated Circuit Anwendungen: Bild-ZF-Verstärker für Farb- und Schwarz-Weiß-Fernsehempfänger TDA 4400 bei PNP-Tunern TDA 4410 bei NPN-Tunern Applications: Video IF-amplifier for colour and monochrome television receivers.

transistor marking YD ghz

Abstract: EHT07317
Contextual Info: Infineon fsclin clog iei GaAs FET CF 739 Data Sheet • N-channel dual-gate GaAs MESFET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,

Contextual Info: Infineon b i i c l ü ç i i es P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz jp = 0.55 dB; Ga - 15.7 dB @ 3 V; 1 0 m A ;/= 1.8 GHz • Suitable for PCS CDMA and UMTS applications

Contextual Info: P re lim ina ry Spec MITSUBISHI LSIs MH1 V645C W XPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard

Contextual Info: PACIFIC DISPLAY DEVICES LCD Component Data Sheet Model Number: 12864-15 128 x 64 Dot COG X-FSTN Graphic LCD Assembly With SSD-1805 Graphic Controller SPI Serial Interface Only LED or EL Panel Backlighting Option CONTENTS 1. GENERAL INFORMATION 1.1 1.2 1.3

bosch Knock sensor

Abstract: cc196 CC195 bosch Knock cc196 CC195 Knock Sensor IC bosch piezoelectric sensor bosch cc195 bosch Knock sensor CC196 bosch window motor knock sensor Bosch
Contextual Info: 20-PPR-1999 CC195 16:33 FROM BOSCH SAT SALES TO 901132799527 P. 02 Specification English extract CC195 Knock Sensor IC Specification Version 6.9a This specification is the property of Bosch and must be maintained in confidence and not discfoeed to others without the prior written consent of Bosch. Bosch makes no warranties

Contextual Info: HOLTEK n r HT27C010 OTP CMOS 128Kx8-Bit EPROM Features • • • • • • • O perating voltage: +5.0V P rogram m ing voltage - Vpp=12.5V±0.2V - Vcc=6.0V±0.2V H igh-reliability CMOS technology L atch-up im m unity to 100mA from -1.0V to Vcc+l.OV CMOS an d TTL com patible I/O

VOGT p8

Abstract: tic 2160 triac kaschke fi 270 uaa145 EQUIVALENT UAA145 "direct replacement" TDA1086T telefunken transistor Kaschke Components CQY40 UAA146
Contextual Info: Allgemeines General Seite Page • H I Schaltungen fur Rundfunkempfanger Circuits for radio receivers Seite Page Schaltungen fur die Signalverarbeitung in Fernsehempfangern Circuits for the signal processing in television receivers Seite ■ Page ■ Schaltungen fur Bedienungssysteme in Rundfunk- und

VQ25

Abstract: IC CHIP 5270 SN54ABT540 SN74ABT540
Contextual Info: SN54ABT540, SN74ABT540 OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS SCBS188A- FEBRUARY 1991 - REVISED JULY 1994 State-of-the-Art EPIC-llB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds

Contextual Info: O K I semiconductor MSM65511 OKI ORIGINAL HIGH PERFORMANCE CMOS 8 BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION M S M 6 5 5 1 1 is a high-performance 8-bit single-chip controller that employs Oki's original nX-8/50 CPU core. W ith a minimum instruction execution time of 400 ns 10M Hz dock , the M S M 6 5 5 1 1 is

H21LO

Contextual Info: HM5113165 Series 128M EDO DRAM 8-Mword x 16-bit 4k refresh HITACHI ADE-203-838B(Z) Rev. 2.0 Jul. 10, 1998 Description The Hitachi HM5113165 Series is 128M-bit dynamic RAM organized as 8,388,608-word x 16-bit. It has realized high performance and low power by employing CMOS process technology. HM5113165 Series

TI-907

Abstract: TI907 N80C51BH LS001323
Contextual Info: ADVANCED MICRO DEVICES 13E D o E 5 7 5 E S QGETlSfl 1 | 8 0 C 51B H /8 0 C 31BH CMOS Single-Chip Microcontroller DISTINCTIVE CHARACTERISTICS • • • • • • CMOS versions of 8051 and 8031 80C51 = 80C31 + 4K bytes ROM 128 bytes of RAM 32 programmable I/O lines

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

Contextual Info: LTC3452 Synchronous Buck-Boost MAIN/CAMERA White LED Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO High Efficiency: ≥85% Over Entire Li-Ion Battery Range Wide VIN Range: 2.7V to 5.5V Independent MAIN/CAMERA Current Control

AOT-2015

Abstract: CD 5888 ic power bank high power white led driver circuit diagram LTC3452 aot 128 Edd 44 jedec package MO-220 LED power INDUCTOR tdk BOBBIN
Contextual Info: LTC3452 Synchronous Buck-Boost MAIN/CAMERA White LED Driver U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO High Efficiency: ≥85% Over Entire Li-Ion Battery Range Wide VIN Range: 2.7V to 5.5V Independent MAIN/CAMERA Current Control

A76 battery

Abstract: TC514100APL ZIP20-P-400A
Contextual Info: 4,194,30^ W O R D X 1 BIT D Y N A M IC RA M This is advanced information and specifica­ tions are subject to change without notice. * D ESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as