AO46 Search Results

HTGB

Abstract: JEDEC htrb HTRB
Contextual Info: AOS Semiconductor Product Reliability Report AO4611/AO4611L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com This AOS product reliability report summarizes the qualification result for AO4611.

AO4620

Abstract: AO4620L 125C-5
Contextual Info: AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.AO4620

AO4622

Contextual Info: AO4622 20V Dual P + N-Channel MOSFET General Description Product Summary The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a

AO4620

Contextual Info: AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.Standard

AO4609

Abstract: mm4609 aos Lot Code Week ALPHA MARKING CODE
Contextual Info: July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side

AO4607

Abstract: AO4607L alpha omega
Contextual Info: AO4607 Complementary Enhancement Mode Field Effect Transistor General Description The AO4607/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A

AO4606

Abstract: AO4606 equivalent
Contextual Info: AO4606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4606/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side

AO4613

Abstract: AO4613L
Contextual Info: AO4613 Complementary Enhancement Mode Field Effect Transistor General Description The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other

AO4604

Abstract: Complementary
Contextual Info: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.

ao4600

Abstract: Complementary POWER MOSFET AO4600 AO4600L PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2
Contextual Info: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)

AO4600C

Contextual Info: AO4600C Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4600C uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO4614B

Abstract: AO4614BL
Contextual Info: AO4614B Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614B/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

AO4614B

Contextual Info: AO4614B 40V Dual P + N-Channel MOSFET General Description Product Summary The AO4614B uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

AO4618

Contextual Info: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AO4622 20V Dual P + N-Channel MOSFET General Description Product Summary The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a

Contextual Info: AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of

transistor f613

Abstract: transistor bc 567
Contextual Info: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.

Contextual Info: AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side

AO4601

Abstract: AO4601L
Contextual Info: AO4601 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4601 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch,

Contextual Info: AOS Semiconductor Product Reliability Report AO4609/AO4609L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Nov 30, 2005 1 This AOS product reliability report summarizes the qualification result for AO4609. Accelerated

AO4606 equivalent

Abstract: AO4606 sony TA-70 15854 TIME SWITCH AO4606A
Contextual Info: AOS Semiconductor Product Reliability Report AO4606/AO4606L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Dec 20, 2005 1 This AOS product reliability report summarizes the qualification result for AO4606. Accelerated

AO4620

Contextual Info: AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.

bd9883

Abstract: GH053A DTS-204 SE9189L SR50 Diode HC SR01 E105147 BA100 diode GT-209 equivalent SP8M3
Contextual Info: Specification GH053A A2 -060415 Version April 2006 Data Modul AG - www.data-modul.com NO DATE REVISION 1 2005.06.15 PAGE 6 Change the part: R10,11,14,15 : 150Ω →47Ω AP4532GM(APEC)→AP4509GM(APEC) Add the vendor AO4606(AOS) Remove the vendor SP8M3(ROHM)

AO4621

Contextual Info: AO4621 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4621 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other