AO4447 Search Results
AO4447 Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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AO4447 | Alpha & Omega Semiconductor | Load Switch - 30V P-Channel MOSFET (Replacement AO4447A) | Original | 173.21KB | 4 | ||
AO4447 | Alpha & Omega Semiconductor | P-Channel Enhancement Mode Field Effect Transistor | Original | 604.85KB | 7 | ||
AO4447A | Alpha & Omega Semiconductor | Load Switch - 30V P-Channel MOSFET | Original | 305.94KB | 5 | ||
AO4447A_102 | Alpha & Omega Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET | Original | 375.99KB | |||
AO4447L | Alpha & Omega Semiconductor | P-Channel Enhancement Mode Field Effect Transistor | Original | 604.85KB | 7 |
AO4447 Price and Stock
Alpha & Omega Semiconductor AO4447AMOSFET P-CH 30V 17A 8SOIC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO4447A | Digi-Reel | 594 | 1 |
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AO4447A | 118 | 16 |
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AO4447A | Cut Strips | 118 | 16 Weeks | 1 |
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AO4447A | 3,258 | 1 |
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AO4447A | 24,739 |
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AO4447A | 21,239 |
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Alpha & Omega Semiconductor AO4447MOSFET P-CH 30V 15A 8SOIC |
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AO4447 | Cut Tape |
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AO4447 | 2,951 |
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Alpha & Omega Semiconductor AO4447ALMOSFET P-CH 30V 17A 8SOIC |
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AO4447AL | Reel |
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AO4447AL | 255 |
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Others AO4447AAVAILABLE EU |
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AO4447A | 1,875 |
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Alpha & Omega Semiconductor AO4447AL_104Transistors |
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AO4447AL_104 | 307 |
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AO4447 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AO4447
Abstract: AO4447L
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Original |
AO4447 AO4447 AO4447L | |
Contextual Info: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. |
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AO4447 AO4447 | |
AO4447ALContextual Info: AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. |
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AO4447AL AO4447AL | |
Contextual Info: AO4447A 30V P-Channel MOSFET General Description Product Summary • The AO4447A uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. VDS ID (at VGS = -10V) |
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AO4447A AO4447A | |
AO4447AContextual Info: AO4447A 30V P-Channel MOSFET General Description Product Summary The AO4447A uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. VDS (V) = -30V ID = -17A |
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AO4447A AO4447A | |
transistor d452
Abstract: d452 TRANSISTOR D452 D452 ALPHA
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AO4447 AO4447/L AO4447L -AO4447L transistor d452 d452 TRANSISTOR D452 D452 ALPHA | |
Contextual Info: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard |
Original |
AO4447 AO4447 AO4447L | |
Contextual Info: AO4447A 30V P-Channel MOSFET General Description Product Summary • The AO4447A uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. VDS ID (at VGS = -10V) |
Original |
AO4447A AO4447A | |
AO4447
Abstract: AO4447L
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Original |
AO4447 AO4447/L AO4447 AO4447L -AO4447L | |
AO4447Contextual Info: AO4447 30V P-Channel MOSFET General Description Product Summary The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. VDS (V) = -30V |
Original |
AO4447 AO4447 | |
Contextual Info: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard |
Original |
AO4447 AO4447 AO4447L | |
AO4447ALContextual Info: AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. |
Original |
AO4447AL AO4447AL | |
Contextual Info: AO4447 30V P-Channel MOSFET General Description Product Summary The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. VDS (V) = -30V |
Original |
AO4447 AO4447 | |
AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
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O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025 | |
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx | |
AO4946
Abstract: AO4456 AO6414 AO4466 ao4712 AOP610 D-PAK AO4803A AO3407A AO4427 AO8820
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SC-89, O-220. OT-23 custome6403 AO6405 AO6409 AO6701 AO7401 AO7407 AO7413 AO4946 AO4456 AO6414 AO4466 ao4712 AOP610 D-PAK AO4803A AO3407A AO4427 AO8820 |