AO4447 Search Results
AO4447 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AO4447 | Alpha & Omega Semiconductor | Load Switch - 30V P-Channel MOSFET (Replacement AO4447A) | Original | 173.21KB | 4 | ||
| AO4447 | Alpha & Omega Semiconductor | P-Channel Enhancement Mode Field Effect Transistor | Original | 604.85KB | 7 | ||
| AO4447A | Alpha & Omega Semiconductor | Load Switch - 30V P-Channel MOSFET | Original | 305.94KB | 5 | ||
| AO4447A_102 | Alpha & Omega Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET | Original | 375.99KB | |||
| AO4447L | Alpha & Omega Semiconductor | P-Channel Enhancement Mode Field Effect Transistor | Original | 604.85KB | 7 |
AO4447 Price and Stock
Alpha & Omega Semiconductor AO4447ATrans MOSFET P-CH 30V 18.5A 8-Pin SOIC T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO4447A | 58 | 33 |
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AO4447A | 3,000 | 16 Weeks | 3,000 |
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| AO4447A | Cut Strips | 58 | 16 Weeks | 1 |
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AO4447A | 6,909 | 1 |
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AO4447A | 4,552 |
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| AO4447A | 4,552 |
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| AO4447A | 975 |
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AO4447A | 1,584 | 1 |
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AO4447A | 24,133 |
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AO4447 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AO4447
Abstract: AO4447L
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ao4447ao4447l | |
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Contextual Info: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. |
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ao4447 | |
AO4447ALContextual Info: AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. |
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ao4447al | |
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Contextual Info: AO4447A 30V P-Channel MOSFET General Description Product Summary • The AO4447A uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. VDS ID (at VGS = -10V) |
Original |
ao4447a | |
AO4447AContextual Info: AO4447A 30V P-Channel MOSFET General Description Product Summary The AO4447A uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. VDS (V) = -30V ID = -17A |
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ao4447a | |
transistor d452
Abstract: d452 TRANSISTOR D452 D452 ALPHA
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Original |
ao4447ao4447/lao4447l-ao4447l+4 | |
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Contextual Info: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard |
Original |
ao4447ao4447l | |
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Contextual Info: AO4447A 30V P-Channel MOSFET General Description Product Summary • The AO4447A uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. VDS ID (at VGS = -10V) |
Original |
ao4447a | |
AO4447
Abstract: AO4447L
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Original |
ao4447ao4447/lao4447l-ao4447l | |
AO4447Contextual Info: AO4447 30V P-Channel MOSFET General Description Product Summary The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. VDS (V) = -30V |
Original |
ao4447 | |
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Contextual Info: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard |
Original |
ao4447ao4447l | |
AO4447ALContextual Info: AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. |
Original |
ao4447al | |
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Contextual Info: AO4447 30V P-Channel MOSFET General Description Product Summary The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. VDS (V) = -30V |
Original |
ao4447 | |
AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
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o-252o-263msop-10sc70-3+16 | |
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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ad9272p462-ndlng295lfcp2up463-nd+11 | |
AO4946
Abstract: AO4456 AO6414 AO4466 ao4712 AOP610 D-PAK AO4803A AO3407A AO4427 AO8820
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sc-89o-220ot-23custome6403+16 | |