ANGS22 Search Results

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Abstract: Chip Inductor CS Coilcraft
Contextual Info: Coilcraft S-Parameter Data for RF Surface Mount Inductors 1008LS Series Chip Inductors Version 1008LS August, 2012 Coilcraft, Inc. 2012 Coilcraft two-port S-parameter data files are based on empirical measurements of Coilcraft RF Surface Mount Inductors. The data files are used as "black box"

47-2001

Abstract: ANG-S21 TGF4124-EPU
Contextual Info:  4124 TGF4124-EPU • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz

Contextual Info: TGF4118-EPU 18 mm Discrete HFET 4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4118-EPU RF Performance at F = 2.3 GHz

RO4850

Abstract: 113 marking code transistor ROHM A004R MCH155 MGA-655T6 c1005* MCH155 MCR 052 PIN 100
Contextual Info: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’

Fujitsu GaAs FET application note

Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Contextual Info: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was

Contextual Info: TGF4118 18 mm Discrete HFET August 5,2008 • • • • • ο4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm

RO4850

Abstract: 113 marking code transistor ROHM C1005C0G1H4R7C c1005* MCH155 toko 4828 PHEMT marking code a 0322E GaAs 0.15 pHEMT A004R MCH155
Contextual Info: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’

Contextual Info: Ceramic Packaged GaAs Power pHEMT AM030WX-BH-R March 2010 Rev 0 DC-10 GHz DESCRIPTION AMCOM’s AM030WX-BH-R is part of the BH series of GaAs pHEMTs. This part has a total gate width of 6mm. The AM030WX-BH-R is designed for high power microwave applications, operating up to 10 GHz. The

s parameters 4ghz

Abstract: GSH904-89 MAG-S22 s 0934
Contextual Info: GSH904-89 Discrete HFET Product Features ● 0. 1 to 4GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3.5 dB Noise Figure Product Description 4 The GSH904-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 4GHz frequency range with 22 dB

16166

Abstract: RLAS2026A Box393
Contextual Info: RLAS2026A 2000 ~ 2600 MHz Super Low Noise Amplifier1 RLAS2026A is an ultra low noise figure, wideband, and unconditionally stable SMT packaged amplifier with exceptionally low input and output VSWR. The amplifier offers typical 0.60 dB noise figure, 20 dB input and output return losses, 26.0 dB

Contextual Info: TGF4124-EPU 4124 24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5% at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz

113 marking code transistor ROHM

Abstract: A004R MCH155 MGA-655T6 c1005* MCH155 CW 7810 RO4850
Contextual Info: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’

GSH912-12

Abstract: GSH912 RG03 GSH912-00 angS12 0841 MAG-S11 unmatched bare amplifier 179-14 1200UM
Contextual Info: GSH912 1200um Discrete HFET Product Features ● 0. 1 to 12GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3 dB Noise Figure ● Bare Die -00 or 0805 DFN (-12) plastic package Product Description The GSH912 is an unmatched General Purpose Medium Power Amplifier

MMA445133-02

Contextual Info: MGA-445343-99 4.4 – 5.3 GHz 20W High Efficiency Linear Power Amplifier Preliminary Data Sheet Oct 2010 Features: • • • • • • • • 13 dB Gain 43 dBm P-3dB 35 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 20% Efficiency at 35 dBm Linear Output Power

ANG-S21

Abstract: TGF4124
Contextual Info:  4124 TGF4124 • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124 RF Performance at F = 2.3 GHz

ai 972

Abstract: SURFACE MOUNT,0603 ANG-S21 TGF4112-EPU 144028 ps 8170
Contextual Info:  4112 TGF4112-EPU • • • • • 12 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4112-EPU RF Performance at F = 2.3 GHz

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Abstract: Chip Inductor CS Coilcraft
Contextual Info: Coilcraft S-Parameter Data for RF Surface Mount Inductors 0402HL Series Chip Inductors Version 0402HL July, 2012 Coilcraft, Inc. 2012 Coilcraft two-port S-parameter data files are based on empirical measurements of Coilcraft RF Surface Mount Inductors. The data files are used as "black box"

Contextual Info: MGA-24106 High-Gain, Low Current Low Noise Amplifier with Variable Current and Shutdown Function Data Sheet Description Features Avago Technologies’ MGA-24106 is a low-noise amplifier LNA designed for GPS/ISM/WiMAX applications in the (0.9-3.5) GHz frequency range. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT

RETU 3.02

Abstract: OT363 K2280
Contextual Info: S IE M E N S BGA425 S i - M M I C - A m p lif ie r in SIEGET 25-Technology Preliminary Data # Multifunctional Case. 50 Q Block LNA/MIX # Unconditionally stable # G a in [s ^ f^ S .S d B at 1.8 G H z (appl.1) G ain [Saif =22 d B at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z (VD=3V,lD=9.5mA)

201100A

Abstract: dc to 3 ghz lna amplifier application circuits S1498 a 4514 v 112883 940462 260016 rf amplifier 10 ghz s1498 schematics power supply satellite receiver S1550
Contextual Info: APPLICATION NOTE SKY65047-360LF Matching Circuits for Various Frequency Bands Introduction S-Parameter and Noise Parameter Data Skyworks SKY65047-360LF is a high linearity Low Noise Amplifier LNA with an operational frequency of 0.4 to 3.0 GHz. The device is manufactured with an advanced SiGe process and

sd 4842

Abstract: MGA-24106 MAX 8997 MGA 24106 7158 7905 datasheet 9435 72 MAX 8774 datasheet mga 017 33262
Contextual Info: MGA-24106 High-Gain, Low Current Low Noise Amplifier with Variable Current and Shutdown Function Data Sheet Description Features Avago Technologies’ MGA-24106 is a low-noise amplifier LNA designed for GPS/ISM/WiMAX applications in the (0.9-3.5) GHz frequency range. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT

MGA-445343-99

Abstract: MMA445133-02 6 ghz amplifier 20w
Contextual Info: MGA-445343-99 4.4 – 5.3 GHz 20W High Efficiency Linear Power Amplifier Preliminary Data Sheet Oct 2010 Features: • • • • • • • • 13 dB Gain 43 dBm P-3dB 35 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 20% Efficiency at 35 dBm Linear Output Power

ANG-S21

Abstract: TGF4112
Contextual Info: TGF4112 12 mm Discrete HFET ο4112 August 5, 2008 • • • • • 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 dB at 2.3 GHz Die size 33.0 x 71.0 x 4.0 mils 0.8330 x 1.804 x 0.1016 mm

bms 97

Abstract: 37265
Contextual Info: S IE M E N S BGA427 Si-M M IC-Am plifier in SIEGET 25-Technology Preliminary Data # Cascadable 50 £2-Gain Block # # Unconditionally stable Gain |s21f =18.5 dB at 1.8 G H z appl.1 Gain |s21f =22 dB at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z # (V D=3V, lD=9.4m A)