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Sensata Circuit Breakers
LELBX11-1-61-20.0-U-M6-V CIR BRKR MAG-HYDR
LELBX11-1-61-20.0-U-M6-V ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key LELBX11-1-61-20.0-U-M6-V Bulk 0 3 - $151.3 $151.3 $151.3 $151.3 More Info
Onlinecomponents.com LELBX11-1-61-20.0-U-M6-V 0 $153.22 $109.21 $61.62 $49.34 $49.34 More Info
Sager LELBX11-1-61-20.0-U-M6-V 0 3 - $231.08 $98.97 $57.65 $57.65 More Info
Sensata Technologies
LELBX11-1-61-20.0-U-M6-V Circuit Breaker, Hydraulic Magnetic, 2 Pole, LEL Series
LELBX11-1-61-20.0-U-M6-V ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation LELBX11-1-61-20.0-U-M6-V Bulk 0 8 Weeks 3 - $198.17 $195.03 $195.03 $195.03 More Info

1200um Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - Not Available

Abstract: No abstract text available
Text: TGF2120 1200um Discrete GaAs pHEMT Applications • • • • • Defense & Aerospace , Information Part TGF2120 - 1 of 6- ECCN EAR99 Description 1200um GaAs pHEMT Disclaimer: Subject to change without notice www.triquint.com TGF2120 1200um Discrete GaAs pHEMT Absolute , change without notice www.triquint.com TGF2120 1200um Discrete GaAs pHEMT S-Parameters Test , TGF2120 1200um Discrete GaAs pHEMT RF Tuned Data at 12 GHz Bias conditions: VDS = 8 V, IDQ = 50% Idss


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PDF TGF2120 1200um TGF2120 1200-Micron
2013 - Not Available

Abstract: No abstract text available
Text: TGF2120 1200um Discrete GaAs pHEMT Applications      Defense & Aerospace , TGF2120 EAR99 1200um GaAs pHEMT - 1 of 6- Disclaimer: Subject to change without notice www.triquint.com TGF2120 1200um Discrete GaAs pHEMT Absolute Maximum Ratings Symbol Parameter Vds Vgs , without notice www.triquint.com TGF2120 1200um Discrete GaAs pHEMT S-Parameters Test Conditions , without notice www.triquint.com TGF2120 1200um Discrete GaAs pHEMT RF Tuned Data at 12 GHz Bias


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PDF TGF2120 1200um TGF2120 1200-Micron
GSH912-12

Abstract: GSH912 RG03 GSH912-00 angS12 0841 MAG-S11 unmatched bare amplifier 179-14 1200UM
Text: GSH912 1200um Discrete HFET Product Features 0. 1 to 12GHz Frequency Range +26 dBm P , GSH912 1200um Discrete HFET Modeled S-Parameters, Bare Die (-00) !GRASEN Technology, LLC !GSH912-00 , 0.465 -157.51 0.474 -158.64 0.483 -159.77 2 of 6 December 2007 GSH912 1200um Discrete HFET , 1200um Discrete HFET GSH912-12 DC IV 0.50 Gate Voltage: -2.00V to 0V in 0.25V steps 0.45 0.40 , 1-408-213-6940 FAX 1-408-532-9359 www.grasentechnology.com 4 of 6 December 2007 GSH912 1200um


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PDF GSH912 1200um 12GHz GSH912 100MHz GSH912-12 RG03 GSH912-00 angS12 0841 MAG-S11 unmatched bare amplifier 179-14
2003 - 10GHz Bandwidth PIN Photodetector

Abstract: VSC8473 VSC7979 APD -25dbm 10ghz photodetector PRBS31 2k 83198 APD 10ghz photodetector modules STM-64
Text: BARE DICE INFORMATION 1200µm (47.24 mils) 1040µm (40.94 mils) Pad 21 GND Pad 20 VCC1 Pad 19 VCC1 Pad 18 VCC1 Pad 17 VCC1 Pad 16 VCC2 Pad 15 Pad 14 1200µm (47.24 mils , : 1200µm x 1200µm (47.24 mils x 47.24 mils) Die Size Excluding Scribe: 1040µm x 1040µm (40.94 mils x , 1200µm (40.94 mils) (47.24 mils) Advance Product Information VSC7979 Data Sheet Subject to


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PDF VSC7979 10GHz 182mW 19dBm OC-192/SDH STM-64 VSC7979 VMDS-10051, 10GHz Bandwidth PIN Photodetector VSC8473 APD -25dbm 10ghz photodetector PRBS31 2k 83198 APD 10ghz photodetector modules STM-64
2004 - Not Available

Abstract: No abstract text available
Text: epitex LED CHIP LED CN850-1202 Opto-Device & Custom LED SPECIFICATION OF LED CHIP CN850-1202 [INFRARED] 1) Commodity Type and Physical Characteristics. 1. Material GaAlAs/GaAlAs (DDH) 2. Electrode Top Side P (anode) side : Au Alloy Bottom Side N (cathode) side : Au Alloy 120um dia. 3. Electrode Pattern 4. Chip Size 1200um * 1200um 5. Chip Thickness 150um±30um 2) Electro-Optical Characteristics Parameters Symbol Forward Voltage Vf Reverse Current


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PDF CN850-1202 120um 1200um 1200um 150um 100mA 50mAulse 100Hz
2007 - Not Available

Abstract: No abstract text available
Text: epitex LED CHIP LED CN870-120 Opto-Device & Custom LED SPECIFICATION OF LED CHIP CN870-120 [INFRARED] 1) Commodity Type and Physical Characteristics. 1. Material GaAlAs/GaAlAs (DDH) 2. Electrode Top Side P (anode) side : Au Alloy Bottom Side N (cathode) side : Au Alloy 120um dia. 3. Electrode Pattern 4. Chip Size 1200um * 1200um 5. Chip Thickness 150um±30um 2) Electro-Optical Characteristics Parameters Symbol Forward Voltage Vf Reverse Current


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PDF CN870-120 120um 1200um 1200um 150um 100mA 100Hz 10kHz
TGA1135B

Abstract: pin diode 23GHz
Text: DET OUT Q1a Q2a 600µm µ 1200µm µ PWR DET Note: drains not connected on lot 9931503 RF IN Q2b Q1b RF OUT 1200µm µ 600µm µ Reference diode 1 Reference diode


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PDF TGA1135B 23GHz 38dBm TGA1135B V/540mA 0007-inch pin diode 23GHz
2000 - 676.160

Abstract: x-band microwave fet x-band power amplifier
Text: . EQUIVALENT SCHEMATIC FET 1 = 2.4mm HFET, 2 x 1200um HFETs FET 2 = 9.6mm HFET, 8 x 1200um HFETs TaN


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PDF TGA8286-EPU TGA8286-EPU effectivel00pF 676.160 x-band microwave fet x-band power amplifier
2002 - TGA1135B

Abstract: TGA1135B-SCC ka band power mmic
Text: VG2 GND DQ VD DET OUT Q1a Q2a 600µm µ 1200µm µ PWR DET RF IN Q2b Q1b RF OUT 1200µm µ 600µm µ Reference diode 1 Reference diode 2 REF3 GND VG1


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PDF TGA1135B-SCC TGA1135B-SCC TGA11135B TGA1135B V/540mA 600um 0007-inch ka band power mmic
BUL2350DL

Abstract: No abstract text available
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN NPN Power Transistor Wafer / BUL2350DL : , High Voltage ,High Switching Speed. E-C Internal Integrated diode between Emitter & Collector. : 110V Suitable for 110V Energy-Saving Lamps and Electronic Ballast ect. 3.50mm×3.50mm Die size 650um* 1200um Emitter BondingAra 634um*1160um Base (260±30)µm Thickness Al Front side Metal Cr/Ni/Ag Back side Bondingwir Al


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PDF BUL2350DL 650um 1200um 634um 1160um BUL2350DL
Not Available

Abstract: No abstract text available
Text: VG2 GND DQ VD DET OUT Q1a Q2a 600µm µ 1200µm µ PWR DET RF IN Q2b Q1b RF OUT 1200µm µ 600µm µ Reference diode 1 Reference diode 2 REF3 GND


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PDF TGA1135B-SCC 1016mm TGA1135B-SCC TGA11135B TGA1135B V/540mA 0007-inch
2008 - TGA1135B

Abstract: schematic diagram temperature control oven furnace TGA1135B-SCC
Text: TGA1135B-SCC VG1 VG2 GND DQ VD DET OUT Q1a Q2a 600µm µ 1200µm µ PWR DET RF IN Q2b Q1b RF OUT 1200µm µ 600µm µ Reference diode 1 Reference diode 2 REF3


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PDF TGA1135B-SCC 1016mm TGA1135B-SCC TGA11135B TGA1135B V/540mA 0007-inch schematic diagram temperature control oven furnace
2001 - TGA1135B-SCC

Abstract: No abstract text available
Text: VG2 GND DQ VD DET OUT Q1a 600µm Q2a 1200µm PWR DET RF IN Q1b 600µm Q2b 1200µm


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PDF TGA1135B-SCC 23GHz 37dBm TGA1135B V/540mA TGA1135B-SCC TGA11135B 0007-inch
200X100

Abstract: No abstract text available
Text: VG2 GND DQ VD DET OUT Q1a 600µm Q2a 1200µm PWR DET RF IN Q1b 600µm Q2b 1200µm RF OUT Reference diode 2 Reference diode 1 REF3 GND VG1 VG2 GND DQ


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PDF TGA1135B-SCC 23GHz 37dBm 016mm TGA1135B V/540mA TGA1135B-SCC TGA11135B 0007-inch 200X100
2003 - Not Available

Abstract: No abstract text available
Text: .( 0 , 0 ) Scribe Lane : 50um · Chip size : 1460 um x 1200um (With Scribe Lane) · PAD Open Size


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PDF
2010 - AAP149B

Abstract: aai 8 pin smd digital electret microphone r149 AAP149X preamplifier with pdm output Microphone ECM Pre-Amplifier
Text: Channel Select · Chip-Scale Micro SMD Bumped Packaging, (810µm x 1200µm x 350µm) · Custom Options of , /- 15um Bottom View, Bump-Side Up VDD IN L/R 810um +/- 20um DAT GD CK 1200um +/- 20um


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PDF AAP149X AAP149B AAP149B 20kHz 1290-B 2010-ASIC AADS00028 aai 8 pin smd digital electret microphone r149 AAP149X preamplifier with pdm output Microphone ECM Pre-Amplifier
2010 - Not Available

Abstract: No abstract text available
Text: , (810µm x 1200µm x 350µm) • Custom Options of Various Gains (6dB to 30dB) and Supply Voltage , CK 1200um +/- 20um Cut Dimensions, Bare Die, Active Area Up © Copyright 2010-ASIC Advant


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PDF AAP149X AAP149B AAP149B 20kHz 1290-B 2010-ASIC AADS00028
2003 - Not Available

Abstract: No abstract text available
Text: 20-1 S2 S1 A2 IOB1 C1 IOB2 C2 IOB3 C3 IOB4 Die size : 1270um x 1200um


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PDF TM8701 TM8701 58MHz, 455KHz)
2004 - Not Available

Abstract: No abstract text available
Text: S1 A2 IOB1 C1 IOB2 C2 IOB3 C3 IOB4 Die size : 1270um x 1200um C4 IOD1


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PDF TM8701 TM8701 58MHz, 455KHz)
2001 - GF6968ED

Abstract: No abstract text available
Text: GF6968ED Battery Switch, ESD Protected N-Channel Enhancement-Mode MOSFET Die VDS 20V RDS(ON) 20m ID 6.8A Chip Geometry NCHT uct RE E T NF Prod GE New TM 1370 m 300 m 1070 m 300 m Gate D 344 m Source 300 m G S Physical Characteristics · Die size : 2000 X 1200µm (78.8 X 47.2 mils) · Metalization: · Metal Thickness: Top: Al/Si/Cu Top: 3.0µm Back: Ti/Ni/Ag Back: 1.4µm · Die thickness: 9 ­13 mils · Bonding Area: Source: As shown Gate: 175 x 175µm ·


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PDF GF6968ED GF6968ED
"p1db 37dbm"

Abstract: TGA1172
Text: 20 25 30 600µm Vg3 1200µm RF OUT 2400µm Vg2 Vg1 Vg3 Vd2 Vd1 -45


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PDF TGA1172 37dBm 28GHz 0007-inch "p1db 37dbm" TGA1172
F1-9229-ST

Abstract: F1-9229-CH dust cap LC F1-1080-FC F1-0061 FC 0137 F1-0061F Zirconia SPLIT ferrules dust cap F1830
Text: 520pm 770 m m 1100pm 350 um 530pm 800um 1200um 360 mm 540 pm S1ÛMm 130ÛMm 380 MTI 550pm 830 m m


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PDF 250ym 450pm 650yrn_ 20jjm^ F1-1080-SCAPC F1-9229-CH F1-9229-ST F1-90010 F1-0125 dust cap LC F1-1080-FC F1-0061 FC 0137 F1-0061F Zirconia SPLIT ferrules dust cap F1830
2004 - Not Available

Abstract: No abstract text available
Text: • Chip size : 1460 um x 1200um (With Scribe Lane) • PAD Open Size : 100 x 100 um (80 x 90 um


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PDF HL3280 HL3280 10cycles
2002 - Not Available

Abstract: No abstract text available
Text: TGA1172-SCC Mechanical Drawing Vd1 Vg2 RF IN Vd2 Vg3 RF OUT Vd3 600µm 1200µm 2400µm Vg1 Vd1


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PDF TGA1172-SCC 36dBm 28GHz TGA1172-SCC TGA1172 0007-inch
sunplus

Abstract: circuit diagram for buzzer circuits SPS28C
Text: Size: 2340µm × 1200µm This IC substrate should be connected to VSS Note1: Chip size included scribe


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PDF SPS28C sunplus circuit diagram for buzzer circuits SPS28C
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