ANGS11 Search Results

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Abstract: Chip Inductor CS Coilcraft
Contextual Info: Coilcraft S-Parameter Data for RF Surface Mount Inductors 1008LS Series Chip Inductors Version 1008LS August, 2012 Coilcraft, Inc. 2012 Coilcraft two-port S-parameter data files are based on empirical measurements of Coilcraft RF Surface Mount Inductors. The data files are used as "black box"

ADF41020

Abstract: db18 DB9 db15 DB-21 DB14 pin configuration DB21 DB16 1030401 MAG-S11 DB23
Contextual Info: AVDD DVDD VP RSET CPGND REFERENCE REFIN CLK DATA LE 24-BIT INPUT REGISTER R COUNTER PHASE FREQUENCY DETECTOR R COUNTER LATCH LOCK DETECT FUNCTION LATCH A, B COUNTER LATCH CHARGE PUMP CP CURRENT SETTING 1 CURRENT SETTING 2 CPI3 CPI2 CPI1 CPI6 CPI5 CPI4 HIGH Z

MHz frequency counter

Contextual Info: PLL Frequency Synthesizer ADF4106-EP Data Sheet FEATURES GENERAL DESCRIPTION 6.0 GHz bandwidth 2.7 V to 3.3 V power supply Separate charge pump supply VP allows extended tuning voltage in 3 V systems Programmable dual-modulus prescaler 8/9, 16/17, 32/33, 64/65

VCO190-902T

Abstract: M3500-2235 8051 edge detection M3500
Contextual Info: RF PLL Frequency Synthesizers ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet FEATURES GENERAL DESCRIPTION ADF4110: 550 MHz; ADF4111: 1.2 GHz; ADF4112: 3.0 GHz; ADF4113: 4.0 GHz 2.7 V to 5.5 V power supply Separate charge pump supply VP allows extended tuning

TDS714L

Abstract: modulator 26MHz AD8302 spur spur free fractional PLL pong VCO190-1843T ADF4193 DCS1800 GSM900 TRANSISTOR SDM M6
Contextual Info: Low Phase Noise, Fast Settling PLL Frequency Synthesizer ADF4193 FEATURES GENERAL DESCRIPTION New, fast settling, fractional-N PLL architecture Single PLL replaces ping-pong synthesizers Frequency hop across GSM band in 5 s with phase settled by 20 μs 0.5° rms phase error at 2 GHz RF output

ADF4206

Abstract: ADF4207 ADF4208 VCO190-1068U wcdma receiver 902D ad4208
Contextual Info: a Dual RF PLL Frequency Synthesizers ADF4206/ADF4207/ADF4208 FEATURES ADF4206: 550 MHz/550 MHz ADF4207: 1.1 GHz/1.1 GHz ADF4208: 2.0 GHz/1.1 GHz 2.7 V to 5.5 V Power Supply Selectable Charge Pump Supply VP Allows Extended Tuning Voltage in 3 V Systems Selectable Charge Pump Currents

47-2001

Abstract: ANG-S21 TGF4124-EPU
Contextual Info:  4124 TGF4124-EPU • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz

Contextual Info: TGF4118-EPU 18 mm Discrete HFET 4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4118-EPU RF Performance at F = 2.3 GHz

86185

Contextual Info: PLL Frequency Synthesizer ADF4108 Data Sheet FEATURES GENERAL DESCRIPTION 8.0 GHz bandwidth 3.2 V to 3.6 V power supply Separate charge pump supply VP allows extended tuning voltage in 3.3 V systems Programmable, dual-modulus prescaler 8/9, 16/17, 32/33, or 64/65

RO4850

Abstract: 113 marking code transistor ROHM A004R MCH155 MGA-655T6 c1005* MCH155 MCR 052 PIN 100
Contextual Info: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’

Fujitsu GaAs FET application note

Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Contextual Info: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was

Contextual Info: TGF4118 18 mm Discrete HFET August 5,2008 • • • • • ο4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm

ANGS11

Contextual Info: MMA-022028 2 - 20 GHz Fully Matched Distributed Power Amplifier 28 dBm Power Amplifier Preliminary Data Sheet August 2007 Features: • Usable Frequency Range: 2-20 GHz • Excellent RF Performance: o 28 dBm P1dB o 7 dB Gain • MTTF > 100 years @ 85°C ambient temperature

RO4850

Abstract: 113 marking code transistor ROHM C1005C0G1H4R7C c1005* MCH155 toko 4828 PHEMT marking code a 0322E GaAs 0.15 pHEMT A004R MCH155
Contextual Info: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’

s parameters 4ghz

Abstract: GSH904-89 MAG-S22 s 0934
Contextual Info: GSH904-89 Discrete HFET Product Features ● 0. 1 to 4GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3.5 dB Noise Figure Product Description 4 The GSH904-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 4GHz frequency range with 22 dB

Contextual Info: Low Phase Noise, Fast Settling, 6 GHz PLL Frequency Synthesizer ADF4196 Data Sheet FEATURES GENERAL DESCRIPTION Fast settling, fractional-N PLL architecture Single PLL replaces ping-pong synthesizers Frequency hop across GSM band in 5 s with phase settled

Contextual Info: High Frequency Divider/PLL Synthesizer ADF4007 Data Sheet FEATURES GENERAL DESCRIPTION 7.5 GHz bandwidth Maximum PFD frequency of 120 MHz Divide ratios of 8, 16, 32, or 64 2.7 V to 3.3 V power supply Separate charge pump supply VP allows extended tuning

16166

Abstract: RLAS2026A Box393
Contextual Info: RLAS2026A 2000 ~ 2600 MHz Super Low Noise Amplifier1 RLAS2026A is an ultra low noise figure, wideband, and unconditionally stable SMT packaged amplifier with exceptionally low input and output VSWR. The amplifier offers typical 0.60 dB noise figure, 20 dB input and output return losses, 26.0 dB

micronetics M3500

Contextual Info: RF PLL Frequency Synthesizers ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet FEATURES GENERAL DESCRIPTION ADF4110: 550 MHz; ADF4111: 1.2 GHz; ADF4112: 3.0 GHz; ADF4113: 4.0 GHz 2.7 V to 5.5 V power supply Separate charge pump supply VP allows extended tuning

Contextual Info: AVDD DVDD VP RSET CPGND REFERENCE REFIN CLK DATA LE 24-BIT INPUT REGISTER R COUNTER PHASE FREQUENCY DETECTOR R COUNTER LATCH LOCK DETECT FUNCTION LATCH A, B COUNTER LATCH CHARGE PUMP CP CURRENT SETTING 1 CURRENT SETTING 2 CPI3 CPI2 CPI1 CPI6 CPI5 CPI4 HIGH Z

Contextual Info: Low Phase Noise, Fast Settling, 6 GHz PLL Frequency Synthesizer ADF4196 Data Sheet FEATURES GENERAL DESCRIPTION Fast settling, fractional-N PLL architecture Single PLL replaces ping-pong synthesizers Frequency hop across GSM band in 5 s with phase settled

Contextual Info: Low Phase Noise, Fast Settling PLL Frequency Synthesizer ADF4193 Data Sheet FEATURES GENERAL DESCRIPTION New, fast settling, fractional-N PLL architecture Single PLL replaces ping-pong synthesizers Frequency hop across GSM band in 5 µs with phase settled

ADF4106SCPZ-EP

Abstract: ADF4106 E4440A adf4106e
Contextual Info: PLL Frequency Synthesizer ADF4106-EP FEATURES GENERAL DESCRIPTION 6.0 GHz bandwidth 2.7 V to 3.3 V power supply Separate charge pump supply VP allows extended tuning voltage in 3 V systems Programmable dual-modulus prescaler 8/9, 16/17, 32/33, 64/65 Programmable charge pump currents

Contextual Info: TGF4124-EPU 4124 24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5% at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz