AND02 Search Results

MTPSP25

Contextual Info: MOTOROLA SC ÎXSTRS/R F> bôE • b3b?2SM 0 m a b 7 e1 S 4 3 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP5P25 Advance Information P o w er Field E ffe c t T ran sisto r P-Channel Enhancement-Mode Silicon Gate If This TMOS Power FET is designed for medium voltage,

"low threshold mosfet"

Abstract: TN2524N8 VN2210N3 VN2224 VN2224N3 ICM7555 IRF520 TN0604N3 TN2524N
Contextual Info: AN-D02 Application Note Low-Threshold TN/TP Series MOSFETs: Structure, Performance and Applications Introduction age. One method of reducing threshold voltage is to reduce the body dopant concentration until the required VGS th is met. This technique by itself is dangerous because it degrades other device parameters. The first and most important of these is drain-source breakdown (BVDSS), which is a

7BFL

Contextual Info: M O TO RO LA SC X ST RS /R F bSE D b 3 b ? 2 5 4 ODTflbbH DIE • MOTb MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MTP4N08E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ra n sisto r N -C h ann el E n h an cem en t-M od e S ilic o n G ate

mtp2p45

Abstract: TP2P45 45MTP 314B03 HF 1932
Contextual Info: MOT OROL A SC XSTRS/R b3b7254 F GDTñbHH 224 • MOTOROLA ■ SEM ICO NDUCTOR TECHNICAL DATA M TP 2P 45 M TP 2P 50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TT These TMOS Power FETs are designed fo r medium voltage,

A0I21

Abstract: m245c MS41C OR-02 BUF01 IC 74ls244 RSC-20 M-540C NOR02 NAND02
Contextual Info: 77441^0 ItOQBQDKI RI COH DDD17DD C ORP/ TbT H P C H T - * + 2 - l - ¿ ? *f ELECTRONIC No.86-0 3 Ì-I9 86 CMOS STANDARD CELL RSC-20 Series •FEATURES ■GENERAL DESCRIPTION • Advanced CM OS Technology R SC -20 s e rie s is a Standard Cell s e rie s using 2um silicon gate

Contextual Info: MOTOROLA Order this document by MCM6709BR/D SEMICONDUCTOR TECHNICAL DATA Product Preview MCM6709BR 64K x 4 Bit Static RAM The MCM6709BR is a 262,144 bit static random access memory organized as 65,536 words of 4 bits. Static design eliminates the need for external clocks or

Harris CA3046

Abstract: CA3046 7h0 ITT ICAN-5296
Contextual Info: S E MI CON] SECTOR 4DE D 4302271 J i HARRIS 003220b I HAS CA3045 CA3046 General Purpose N -P-N Transistor Arrays August 1991 fea tu res Description • Two Matched Tran sisto rs: V b ë Matched ±5mV; Input Offset Current 2pA Max at lc = 1mA The CA304S and CA3046 each consist of fivo general

AOI31

Abstract: RSC-15 74LS94 EK-044-9004 ic 74ls83 CSR b4c M240C 4520C M165C bf368
Contextual Info: n n EK-044-9004 CMOS Gate Array 5GV Series The RICOH gate array 5GV series complies with the CMOS 1.5/i rule, and offers high speed operation with a gate delay time of 1.0 ns. The 5GV series inherits the rich library of 5GF gate array series. The cell library is compatible with

Contextual Info: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM

Contextual Info: MOTOROLA Order this document by MCM6709B/D SEMICONDUCTOR TECHNICAL DATA Product Preview MCM6709B 64K x 4 Bit Static RAM The MCM6709B is a 262,144 bit static random access memory organized as 65,536 words of 4 bit. Static design eliminates the need for external clocks or tim­

M38510

Contextual Info: T h i s M a t e r i a l C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r 1. SCOPE 1 1 Scope. This drawing describes the requirements for monolithic silicon, advanced SctottlJrffL. J-K flip-flops microcircuits. This dmrtng proxies for . 1,»1 of microc.irant quality

HV9961

Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
Contextual Info: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

Contextual Info: MOTOROLA SC XSTRS/R F bflE ]> L 3b72S4 0 CHflb24 43b «M O Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP1N50 Pow er Field Effect Transistor IM-Channel Enhancement Mode Silicon Gate T M O S P O W E R FE T T h is T M O S P o w e r FET is d esig n ed fo r hig h v o ltag e, high speed

TP8N20

Abstract: 8n20 314B03 MTP8N20
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA bflE D • b B b V E S 1! GDTflSbfi ÔÔ7 ■ M O T b ■ SEM ICO NDUCTOR TECHNICAL DATA _ M TM 8N20 M T P 8N 2 0 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is to r IM-Channel Enhancement-Mode Silicon Gate

V3 13005

Abstract: 3005-4 3010 IC 4009A ALI 3105 data seet ne 55 n HA 11225 4041a ANI 1015 en1 3007
Contextual Info: F MIL-M-38510/55F 30 April 1984 SUPEftSËDÏNG MIL-M-38510/55E 2 D e c e m b e r 1981 MILITARY SPECIFICATION MICRO C I R C U I T S , DIGITAL, CMOS, BUFFER/CONVERTER, TRUE/COMPLEMENT BUFFER, MONOLITHIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d f o r u s e

MTP8p10

Contextual Info: MOTOROLA SC XSTRS/R F böE ]> • b3b7ES4 OD'îflTO'î DOG ■ MOTb M O TO R O LA ■ SEMICONDUCTOR TECHNICAL DATA MTP8P10 Designer's Data Sheet P o w er Field E ffe c t Tran sisto r P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8 AMPERES RDS(on) = 0.4 OHM

STR 6656

Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

ic str wg 252

Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

AOI211

Abstract: MX08 IC TTL 7400 schematic AOI33 8 bit full adder "8 bit full adder" LA01 BCD-TO-7-SEGMENT DECODER 74151H TR-C06
Contextual Info: ÉNATL SEUICOND {MEMORY} OSE D | b S O llBb P 0 bl3Cm FGC Series t J^p^ Advanced 2-MlCrOll CMOS Gate Array Family fa T rc h T ld ASchlum bergerCom pany Description Array Organization The FGC Series is an advanced, high performance CMOS gate array family designed for LSI implementation of existing

74LS80

Abstract: 74LS198 74LS150 74LS94 OAI32 74LS179 TTL 74LS198 MUX21H TTL 74ls138 to 7 segment 7476 3 bit ripple counter
Contextual Info: 4flE ]> • 77MLjbciO 0001L3M 4bO « P C H T- °J EK-044-9004 CMOS Gate Array 5GV Series RICOH CORP/ ELECTRONIC The RICOH gate array 5GV series complies with the CMOS 1.5ju rule, and offers high speed operation with a gate delay time of 1.0 ns. The 5GV series inherits the rich library of 5GF gate array series. The cell library is compatible with