AND GATE Search Results

ZN1004E

Abstract: led E14 ZN1005E ic57
Contextual Info: INTERFACE CIRCUITS LINE DRIVER AND RECEIVER ZN1004E ZN1005E The ZN1004E and ZN1005E have been designed for high speed data transmission between computers and remote peripheral equipment using twisted pair cable. The driver has two inputs, data and gate, and

tc4082bp

Abstract: TC4073BP
Contextual Info: TC4073BP/BF/BFN, TC4081BP/BF/BFN C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4082BP TC4073B TRIPLE 3 INPUT AND GATE TC4081B QUAD 2 INPUT AND GATE TC4082B DUAL 4 INPUT AND GATE TC4081 BP, TC4073B and TC4082B are positive logic AND gates with tw o inputs, three inputs and four inputs

TC4082B

Abstract: TC4082BP TC4073BP TC4081B
Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4073BP/BF/BFNJC4081BP/BF/BFN TC4082BP TC4073B TRIPLE 3 INPUT AND GATE TC4Q81B QUAD 2 INPUT AND GATE TC4082B DUAL 4 INPUT AND GATE TC4081BP, TC4073B and TC4082B are positive logic AND gates w ith tw o inputs, three inputs and fo ur inputs

Contextual Info: TC4085BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4085BP DUAL 2-WIDE 2-INPUT AND-OR-INVERT GATE TC4085BP contains two circuits of AND-OR select gates and the outputs are inverted. The circuit consists of two 2 input AND gates and one NOR gate,

TLP250 MOSFET DRIVER

Abstract: A 3150 igbt driver TLP250 igbt driver applications TLP250 mosfet gate Driver fod3120 fod3120 applications TLP250 MOSFET DRIVER application note FOD3150 IGBT driver hcpl3120 3120 v IGBT DRIVER
Contextual Info: FOD3120 and FOD3150 High Speed MOSFET/IGBT Gate Drive Optocouplers Fairchild’s Offering The FOD3120 and FOD3150 are 2.5A and 1.0A output current gate drive optocouplers capable of driving 1200V/20A IGBTs and MOSFETs in solar inverters, motor drives and induction heating applications. These

irf450

Abstract: diode F451 IRF452 IRF451
Contextual Info: iH A R R is SEUIC0NDUCT0R IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: iH A R R is SEMIC0NDUCT0R IRF130, IRF131, IRF132, IRF133 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

irfd1z3

Abstract: TA17451
Contextual Info: tyvvys S IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Semiconductor y y 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 0.4A and 0.5A, 60V and 100V • Nanosecond Switching Speeds These are N-Channel enhancement mode silicon gate

TA17521

Abstract: IRF9140
Contextual Info: HAJims S IRF9140, IRF9141, IRF9142, IRF9143 Semiconductor y y -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs November 1997 Features Description • -19A and -15A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate

Contextual Info: if* ? S IRF430, IRF431, IRF432, IRF433 Semiconductor y y 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 4.0A and 4.5A, 450V and 500V, • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF420

Abstract: IRF422 TB334 IRF421 IRF423
Contextual Info: IRF420, IRF421, IRF422, IRF423 Semiconductor 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF140

Abstract: IRF141 IRF143 IRF142 to204ae IRF140 HARRIS IRF140 ir
Contextual Info: IRF140, IRF141, IRF142, IRF143 h a r r is SEM C0NDUCT0R 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Juiy 1998 Features Description • 28A and 25A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

7408 texas

Abstract: TTL 7408 54ls08 74LS 7408
Contextual Info: SN5408, SN54LS08, SNS4S08, SN7408, SN74LS08, SN74S08 QUADRUPLE 2-INPUT POSITIVE AND GATES DECEMBER 1983 - REVISED MARCH 1988 • Package Options Include Plastic "Small Outline" Packages, Ceramic Chip Carriers and Flat Packages, and Plastic and Ceramic DIPs

SOT886

Abstract: BGA Package 0.35mm pitch SOT891 wcsp sot886-1 SOT-902 sot665
Contextual Info: NXP MicroPak and MicroPak II packages for single-, dual-, and triplegate logic functions World’s smallest leadless logic packages MicroPak and MicroPak II packages are the world’s smallest packages for single-, dual-, and triple-gate logic. They are 65% - 74% smaller than their PicoGate equivalents and offer a larger

IRF540

Abstract: Applications Note of IRF540 irf541 RF1S540SM9A RF1S540SM IRF542 IRF543 irf540 be IRF540 Rg RF1S540
Contextual Info: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM HARRIS S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Description Features • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate

IC TTL 74133

Abstract: TTL 74133 74133
Contextual Info: SN54S133, SN74S133 13-INPUT POSITIVE AND GATES DECEMBER 1983 - REVISED MARCH 19B0 Package Options Include Plastic "Small Outline" Packages, Ceramic Chip Carriers and Flat Packages, and Plastic and Ceramic DIPs TOP VIEW AC Dependable Texas Instruments Quality and

Contextual Info: SN5408, SN54LS08, SN54S08, SN7408, SN74LS08, SN74S08 QUADRUPLE 2-INPUT POSITIVE-AND GATES DECEM BER 1983 - R EV ISED MARCH 1988 Package Options Include Plastic "Small Outline" Packages, Ceramic Chip Carriers and Flat Packages, and Plastic and Ceramic DIPs

TC4086BP

Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4086BP TC4086BP EXPANDABLE 4-WIDE 2-INPUT AND- O R - I N V E R T GATE TC4086BP contains four 2 input AND gates and one OR gate which logically adds OR all the AND gates having an expander input to form AND-OR-select gate,

charge pump mosfet driver external

Abstract: pin diagram of MOSFET mosfet drive circuit diagram Optical disc drive diagram h-bridge circuit diagram BH6511FS pump h-bridge gate drive ic PWM IC 8 PIN charge pump
Contextual Info: Optical disc ICs 4-channel PWM driver for CD and MD players BH6511FS The BH6511FS is an IC designed for CD and MD player motors and actuators, and has an internal 4-channel PWM driver, and a charge pump circuit that supplies the gate drive for the output stage power MOSFET. The power MOSFET in

Contextual Info: SMT GATE DRIVE TRANSFORMERS 1500VDC Basic and Operational Insulation 1500VDC isolation between Gate and Drive Basic insulation 1.4mm creepage/clearance and operational available Operating frequency: 50kHz and up Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C

Contextual Info: CD4019BC,CD4019BM CD4019BM CD4019BC Quad AND-OR Select Gate Literature Number: SNOS360A CD4019BM CD4019BC Quad AND-OR Select Gate General Description Features The CD4019BM CD4019BC is a complementary MOS quad AND-OR select gate Low power and high noise margin

MCR72

Abstract: mcr72-6 MCR72-8G
Contextual Info: MCR72−3, MCR72−6, MCR72−8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface.

PA0510

Abstract: PA0297 pe-68386 PA0264 P0544 PA0173 P0926 P2033 PA0184 PA0185
Contextual Info: SMT GATE DRIVE TRANSFORMERS 1500VDC Basic and Operational Insulation 1500VDC isolation between Gate and Drive Basic insulation 1.4mm creepage/clearance and operational available Operating frequency: 50kHz and up Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C

P0544NL

Abstract: PA0184NL pe-68386nl PA0264NL PA0510NL p2033 PA0184 PE-68386 PA0297NL P0926NL
Contextual Info: SMT GATE DRIVE TRANSFORMERS 1500VDC Basic and Operational Insulation 1500VDC isolation between Gate and Drive Basic insulation 1.4mm creepage/clearance and operational available Operating frequency: 50kHz and up Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5