AN13470 Search Results

CY62148E

Abstract: CY62148B CY62148DV30 CY62148ELL CY62148ELL-55SXA CY62148ELL-55SXI CY62148EV30 CY62148EV30LL CY62148EV30LL-55SXI AN13470
Contextual Info: Clarification on VIL Spec for 90 nm 4M MoBL SRAMs SOIC Packages AN13470 Author: Anuj Chakrapani Associated Project: No Associated Part Family: CY62148E / CY62148EV30 Software Version: None Associated Application Notes: None Abstract AN13470 discusses the VIL input low voltage specification for the 90 nm 4M CY62148ELL-55SXI, CY62148ELL-55SXA and

CY62148E

Abstract: CY62148ELL-45ZSXI CY62148B CY62148ELL CY62148ELL-55SXA CY62148ELL-55SXI CY62148e CY62148b
Contextual Info: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description [1] Features • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current.

CY62148E

Abstract: VFBGA CY62148DV30 CY62148EV30 CY62148EV30LL CY62148EV30LL-45BVXI CY62148EV30LL-45ZSXA CY62148EV30LL-45ZSXI CY62148EV30LL-55SXI
Contextual Info: MoBL CY62148EV30 4-Mbit 512K x 8 Static RAM Features Functional Description The CY62148EV30[2] is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

CY62148E

Abstract: AN1064 CY62148DV30 CY62148EV30 CY62148EV30LL CY62148EV30LL-45BVI CY62148EV30LL-45BVXI CY62148EV30LL-45ZSXI
Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V ■ Temperature range: ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C

05576

Abstract: CY62148EV30LL-45BVXI VFBGA CY62148DV30 CY62148EV30 CY62148EV30LL CY62148EV30LL-45ZSXI CY62148EV30LL-55SXI CY62148E
Contextual Info: CY62148EV30 MoBL 4-Mbit 512K x 8 Static RAM Functional Description [2] Features • Very high speed: 45 ns The CY62148EV30 is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current.

cy62148esl

Abstract: AN1064 CY62148ESL-55ZAXI
Contextual Info: CY62148ESL MoBL 4-Mbit 512K x 8 Static RAM Features Functional Description • Very high speed: 55 ns ■ Wide voltage range: 2.2V to 3.6V and 4.5V to 5.5V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 μA

CY62148DV30

Abstract: CY62148EV30 CY62148EV30LL CY62148EV30LL-45BVI CY62148EV30LL-45BVXI CY62148EV30LL-45ZSXA CY62148EV30LL-45ZSXI
Contextual Info: CY62148EV30 MoBL 4-Mbit 512K x 8 Static RAM Features Functional Description • Very High Speed: 45 ns ❐ Wide voltage range: 2.20V to 3.60V ■ Temperature Range: ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Pin Compatible with CY62148DV30

CY62148E

Abstract: CY62148B CY62148ELL CY62148ELL-45ZSXI CY62148ELL-55SXI 249276
Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

CY62148E

Abstract: CY62148B CY62148ELL CY62148ELL-45ZSXI CY62148ELL-55SXI 330281
Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

CY62148E

Abstract: AN1064 CY62148ESL-55ZAXI
Contextual Info: CY62148ESL MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Higher speed up to 55 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 µA

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Functional Description Features The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

CY62148EV30LL-45ZSXI

Contextual Info: CY62148EV30 MoBL 4-Mbit 512K x 8 Static RAM Functional Description [1] Features • Very high speed: 45 ns The CY62148EV30 is a high-performance CMOS static RAMs organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512K x 8 Static RAM Functional Description [2] Features • Very high speed: 45 ns The CY62148EV30 is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current.

CY62148E

Abstract: CY62148DV30 CY62148EV30 CY62148EV30LL CY62148EV30LL-45BVI CY62148EV30LL-45BVXI
Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V ■ Temperature range: ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ■ Pin compatible with CY62148DV30

CY62148E

Abstract: TR12-11
Contextual Info: CY62148ESL MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Higher speed up to 55 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 µA

CY62148E

Contextual Info: CY62148ESL MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Higher speed up to 55 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 µA

Contextual Info: CY62148ESL MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Higher speed up to 55 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 µA

CY62148E

Contextual Info: CY62148ESL MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Higher speed up to 55 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 µA

CY62148E

Abstract: CY62148ELL-55SXI
Contextual Info: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description [1] Features • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current.

CY62148E

Abstract: cy 4902
Contextual Info: CY62148ESL MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Higher speed up to 55 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 µA