AMPLIFIER WITH 2900 GAIN Search Results

Contextual Info: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a

Contextual Info: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a

Zener C212

Abstract: diode zener c71 zener ma 1150
Contextual Info: ASX621 250 ~ 3000 MHz MMIC Amplifier Description Features  18 dB Gain at 2000 MHz  32.5 dBm P1dB at 2000 MHz  49 dBm Output IP3 at 2000 MHz  MTTF > 100 Years  Two Power Supplies The ASX621, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

sdars

Abstract: BFP740FESD BFP640FESD BFP640 EICEDRIVER symbian C166 LQW15A 26DBM-K vinaxTM l1
Contextual Info: BF P640 F ES D High Gain and Lo w Noise Amplifier B F P640 F ESD fo r S D A R s 2nd S t a ge 2.33 GHz Applic atio n Technic al Rep ort T R 1019 Revision: no Revision 2010-04-23 RF and Protecti on Devi c es Edition 2010-04-23 Published by Infineon Technologies AG

26 sot-363 rf power amplifier

Abstract: UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV UPC2745TB UPC2747TB
Contextual Info: NEC Silicon RFIC Amplifiers – Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers Part Number Typical ELECTRICAL CHARACTERISTICS1 TA = 25°C Frequency Range VCC ICC NF Gain RLIN RLOUT P1dB ISOL @ 3dB (V) (mA) (dB) (dB) (dB) (dB) (dBm) (dB) down Package

MAX9986A

Contextual Info: 19-4827; Rev 0; 10/09 TION KIT EVALUA BLE AVAILA SiGe, High-Linearity, 2300MHz to 4000MHz Downconversion Mixer with LO Buffer Features The MAX19998 single, high-linearity downconversion mixer provides 8.7dB of conversion gain, +24.3dBm input IP3, +11.3dBm 1dB input compression point,

MAX9986A

Abstract: MAX19998ETP TC4-1W-17
Contextual Info: 19-4827; Rev 0; 10/09 TION KIT EVALUA BLE AVAILA SiGe, High-Linearity, 2300MHz to 4000MHz Downconversion Mixer with LO Buffer Features The MAX19998 single, high-linearity downconversion mixer provides 8.7dB of conversion gain, +24.3dBm input IP3, +11.3dBm 1dB input compression point,

TQ9132B

Abstract: TQ9132 TQ9132-BN
Contextual Info: TQ9132-BN Data Sheet Wide Band Power Amplifier Gain Block Features Functional Block Diagram IN 3 6 OUT • • • • • • GND 4 5 GND Applications VDD 1 8 GND GND GN D 2 7 GND TQ9132B Product Description The TQ9132 amplifier is a 500-2500 MHz amplifier capable of providing

Contextual Info: TQ9132-BN Data Sheet Wide Band Power Amplifier Gain Block Features Functional Block Diagram IN 3 6 OUT • • • • • • GND 4 5 GND Applications VDD 1 8 GND GND 2 7 GND TQ9132B Product Description The TQ9132 amplifier is a 500-2500 MHz amplifier capable of providing

GEC Plessey amplifier

Abstract: Plessey semiconductors sl6140 Plessey semiconductors Linear Integrated circuit SL6140
Contextual Info: DS2159 - 4.1 SL6140 400MHz WIDEBAND AGC AMPLIFIER Supersedes Edition in May 1991 Professional Products IC Handbook The SL6140 is an integrated broadband AGC amplifier, designed on an advanced bipolar process. The amplifier provides over 15dB of linear gain into 50Ω at 400MHz. Gain

Contextual Info: FMM5061VF FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=27.0dB (typ.) Broad Band: 9.5~13.3GHz Impedance Matched Zin/Zout=50 Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage

FMM5061VF

Abstract: FMM5061 x-Band High Power Amplifier ED-4701
Contextual Info: FMM5061VF FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 9.5~13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage

FMM5061VF

Abstract: x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
Contextual Info: FMM5061VF FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 9.5~13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage

50 V DC CK06

Abstract: gold capacitor AM2931-110 42V32
Contextual Info: AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN. WITH 6.2 dB GAIN

Contextual Info: 19-4402; Rev 0; 1/09 SiGe, High-Linearity, 2000MHz to 3900MHz Downconversion Mixer with LO Buffer The MAX19996A single, high-linearity downconversion mixer provides 8.7dB conversion gain, +24.5dBm IIP3, and 9.8dB noise figure for 2000MHz to 3900MHz WCS, LTE, WiMAX , and MMDS wireless infrastructure applications. With an ultra-wide LO frequency range of

AM2931-110

Abstract: 42V32
Contextual Info: AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN. WITH 6.2 dB GAIN

100uf 63v electrolytic capacitor

Abstract: CAPACITOR 33PF ceramic capacitor -33pf capacitor 100uF 63V radar amplifier s-band 2.7 2.9 GHZ AM2729-125 Capacitor 100uF A3080
Contextual Info: AM2729-125 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 125 W MIN. WITH 7.0 dB GAIN

Contextual Info: 19-4402; Rev 1; 5/09 SiGe, High-Linearity, 2000MHz to 3900MHz Downconversion Mixer with LO Buffer The MAX19996A single, high-linearity downconversion mixer provides 8.7dB conversion gain, +24.5dBm IIP3, and 9.8dB noise figure for 2000MHz to 3900MHz WCS, LTE, WiMAX , and MMDS wireless infrastructure applications. With an ultra-wide LO frequency range of

SL611 Plessey

Abstract: plessey SL610 Plessey ssb transceiver sl612c plessey Plessey sl612 SL611 SL612 ds3630 SL611C SL612C
Contextual Info: ADVANCE INFORMATION DS3630 - 1.1 SL610, SL611 & SL612 RF/IF AMPLIFIER The SL610C, SL611C and SL612C are RF voltage amplifier with AGC facilities. The voltage gain is 10, 20 and 50 times respectively and the upper frequency response varies from 15MHz to 120MHz according to type .

EMM5068X

Abstract: X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
Contextual Info: EMM5068X X-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5~13.3GHz ・Impedance Matched Zin/Zout=50Ω Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage

JESD51-7

Abstract: MAX9993
Contextual Info: 19-4402; Rev 1; 5/09 SiGe, High-Linearity, 2000MHz to 3900MHz Downconversion Mixer with LO Buffer The MAX19996A single, high-linearity downconversion mixer provides 8.7dB conversion gain, +24.5dBm IIP3, and 9.8dB noise figure for 2000MHz to 3900MHz WCS, LTE, WiMAX , and MMDS wireless infrastructure applications. With an ultra-wide LO frequency range of

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3630 - 1.1 SL610, SL611 & SL612 RF/IF AMPLIFIER The SL610C, SL611C and SL612C are RF voltage amplifier with AGC facilities. The voltage gain is 10, 20 and

X-band amplifier

Abstract: 462 008 0004 00 AF
Contextual Info: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5~13.3GHz Impedance Matched Zin/Zout=50 Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the

5570

Abstract: C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 µm • 4-pin super minimold package