CGHV35150 Search Results
CGHV35150 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CGHV35150F | 
 
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RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 150W | Original | 9 | |||
| CGHV35150F-AMP | 
 
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CGHV35150F DEV BOARD WITH HEMT | Original | 775.69KB | |||
| CGHV35150F-AMP | 
 
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CGHV35150F DEV BOARD WITH HEMT | Original | 1.63MB | |||
| CGHV35150F-TB | 
 
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RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV35150F | Original | 9 | |||
| CGHV35150P | 
 
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150W, GAN HEMT, 50V, 2.9-3.5GHZ, | Original | 1.63MB | |||
| CGHV35150P | 
 
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150W, GAN HEMT, 50V, 2.9-3.5GHZ, | Original | 775.69KB | |||
| CGHV35150-TB | 
 
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RF/IF and RFID - RF Evaluation and Development Kits, Boards - TEST FIXTURE FOR CGHV35150F | Original | 1.43MB | 
CGHV35150 Price and Stock
MACOM CGHV35150FRF MOSFET HEMT 50V 440193 | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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CGHV35150F | Tray | 139 | 1 | 
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CGHV35150F | 20 | 
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CGHV35150F | 46 | 1 | 
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CGHV35150F | 46 | 20 | 
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MACOM CGHV35150F-AMPCGHV35150F DEV BOARD WITH HEMT | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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CGHV35150F-AMP | Box | 1 | 1 | 
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CGHV35150F-AMP | 2 | 
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MACOM CGHV35150PRF MOSFET HEMT 50V 440206 | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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CGHV35150P | Tray | 
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CGHV35150P | 
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CGHV35150P | 1 | 
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MACOM CGHV35150-TBTEST FIXTURE FOR CGHV35150F | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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CGHV35150-TB | Bulk | 
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CGHV35150-TB | 2 | 2 | 
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CGHV35150-TB | 2 | 1 | 
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CGHV35150 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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 Contextual Info: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a  | 
 Original  | 
CGHV35150 CGHV35150 CGHV35150F-TB | |
| 
 Contextual Info: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a  | 
 Original  | 
CGHV35150 CGHV35150 CGHV35150F-TB |