AMPLIFICATIONS Search Results

BDY57

Abstract: BDY58
Contextual Info: Inchange Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・For use in low frequency large signal power amplifications PINNING See Fig.2

GLBCP56

Abstract: GLBCX53
Contextual Info: ISSUED DATE :2002/11/20 REVISED DATE :2006/01/02D GLBCP56 N P N S I L I C O N E P I TA X I A L T R A N S I S T O R Description The GLBCP56 is designed for use in audio amplifiers and medium power amplifications. Features Collector-Emitter Voltage: VCEO=80V

BDY58

Abstract: BDY57
Contextual Info: SavantIC Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in low frequency large signal power amplifications PINNING See Fig.2

2SB980

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB980 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifications.

ST T4 1060

Abstract: corning fiber optic cables SMF-28E corning fiber optic T4 1060 optical fiber cable corning wdm 1480 corning smf cable
Contextual Info: Wavelength Division Multiplexing WDM Devices W-PM PUMP WDMS Features: • Ultra high isolation • High port isolation • Customer defined specifications • Low insertion loss • Environmentally stable Applications: • Telecommunications • Fiber amplifications

Contextual Info: Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications.

NEC JAPAN

Abstract: NESG2021M16 NESG2021M16-T3
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications

Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications

Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz

2SC1030

Contextual Info: Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage

2SB941

Abstract: 2SD1266 2sB941 transistor 2SB941 Q
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB941 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.2V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1266 APPLICATIONS ·Designed for low-frequency power amplifications.

Contextual Info: A Business Partner of Renesas Electronics Corporation. NESG2021M05 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • • <R> This device is an ideal choice for low noise, high-gain at low current amplifications.

Contextual Info: Data Sheet NESG2031M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0035EJ0400 Rev. 4.00 Jun 20, 2012 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications.

Contextual Info: Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications.

2SB1362

Abstract: 2SD2053
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1362 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2053 APPLICATIONS ·Designed for high power amplifications.

2SB940

Abstract: 2SD1264
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB940 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·High Collector Power Dissipation ·Complement to Type 2SD1264 APPLICATIONS ·Designed for power amplifications and TV vertical

Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz

7313

Abstract: amplifier 2606 Optical power Splitter furukawa standard erfa 33212 optical amplifier EDFA "electrical connector"
Contextual Info: Data Sheet ErFA 3321x Series Mar. 2010 EDFA for Analog CATV networks Applications z Video, analog or Booster applications z Single-channel or small number of channel networks Product type: ErFA 33211, 33212, 33213, 33214 Descriptions ErFA3321x Series is designed for use in video, analog, or booster amplifications. Amplifier

D45H10

Contextual Info: SavantIC Semiconductor Product Specification D45H10 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·For general purpose power amplifications and switching regulators,converters and

2sd847

Abstract: 2SB757
Contextual Info: SavantIC Semiconductor Product Specification 2SD847 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High collector current ·Wide area of safe operation ·Complement to type 2SB757 APPLICATIONS ·Audio amplifications ·Serie regulators ·General purpose power amplifiers

2sb1017

Abstract: 2SD1408 V2409
Contextual Info: SavantIC Semiconductor Product Specification 2SB1017 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1408 · APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage

D45H10

Contextual Info: Inchange Semiconductor Product Specification D45H10 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Fast switching speeds ・Low collector saturation voltage APPLICATIONS ・For general purpose power amplifications and switching regulators,converters and

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications

2SB757

Abstract: 2SD847
Contextual Info: JMnic Product Specification 2SB757 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High collector current ・Wide area of safe operation ・Complement to type 2SD847 APPLICATIONS ・Audio amplifications ・Serie regulators ・General purpose power amplifiers