AM99C8 Search Results

Contextual Info: Am99C89 8 1 9 2 x 9 Static R /W Random-Access Memory ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS High Speed - Access time as fast as 45 ns Low power consumption - 660 mW Maximum Active - 140 mW Maximum (Standby) Output Enable (3) control to minimize bus contention

cd009

Contextual Info: Am99C88H 8 1 9 2 x 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • • • • • • • • • High Speed - 35 ns Commercial - 45 ns Military Low active power dissipation - 605 mW Maximum Low standby pow er dissipation - 138 mW Maximum

Amd 5000 pin diagram

Contextual Info: Am99C88/Am99CL88 DISTINCTIVE CHARACTERISTICS • • High speed - a c c e s s tim es 7 0/1 0 0 /1 2 0 /1 5 0 ns Low-power requirements: - A m 99C88 Operating: 330 mW M ax. Standy: 16.5 mW Max. - Am 99C L88 Operating: 220 mW Max. Standby: 550 /j W Max. Battery backed-up operation 2 V data retention

Contextual Info: Am99C88H 8 1 9 2 x 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • • • • • High Speed - 35 ns Commercial - 45 ns Military Low active power dissipation - 605 mW Maximum Low standby power dissipation - 138 mW Maximum Battery backup operation

Contextual Info: Am99C88/Am99CL88 8 Kx 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • High speed - access times 70/100/120/150 ns Low-power requirements: - Am99C88 Operating: 330 mW Max. Standy: 16.5 mW Max. - Am99CL88 Operating: 220 mW Max. Standby: 550 /jW Max.

99C88

Abstract: CI 8810 8815A
Contextual Info: Am99C88/Am99CL88 8 K x 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • High speed - access tim es 7 0 /1 0 0 /1 2 0 /1 5 0 ns Low-power requirements: - Am99C88 Operating: 330 mW Max. Standy: 16.5 mW Max. - Am99CL88 Operating: 220 mW Max.

Amd 5000 pin diagram

Abstract: ISB12
Contextual Info: Am99C88/Am99CL88 DISTINCTIVE CHARACTERISTICS • • High speed - a c c e s s tim es 7 0/1 0 0 /1 2 0 /1 5 0 ns Low-power requirements: - A m 99C88 Operating: 330 mW M ax. Standy: 16.5 mW Max. - Am 99C L88 Operating: 220 mW Max. Standby: 550 /j W Max. Battery backed-up operation 2 V data retention

ci 4303

Abstract: CI-524
Contextual Info: Am99C89 8 1 9 2 x 9 Static R /W Random-Access Memory _ ADVANCE INFORMATION_ 68066WV DISTINCTIVE CHARACTERISTICS High Speed - Access tim e as fa st as 45 ns Low power consum ption - 660 mW Maximum Active - 140 mW Maximum (Standby) Output Enable (3) control to minimize bus contention

Contextual Info: Am99C88H 8 1 9 2 x 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • • • • • High Speed - 35 ns Commercial - 45 ns Military Low active power dissipation - 605 mW Maximum Low standby pow er dissipation - 1 3 8 mW Maximum Battery backup operation

ed18810

Abstract: 5962-3829453MTa QML-38535 5962-3829410MYX 5962-R085-93 IDT7164L70L32B 5962-3829412MXA GDIP1-T28 5C640 UT6717685
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added chanaes in accordance with NOR 5962-R085-93 93-03-16 M. A. Frve F Added device types 45, 46, and 47. Removed CAGE code 34168 for case outline 8, and added cage code 34168 for case outline 9. Editorial changes throughout.

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

HM1E

Abstract: 5962-3829435 IDT7164L70L32B mk48h64 5962-3829407MXX 62l64-45 HC6364 5962-8552505X QML-38535 IDT7164S55DB
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added changes in accordance with NOR 5962-R085-93 93-03-16 M. A. Frye F Added device types 45, 46, and 47. Removed CAGE code 34168 for case outline 8, and added cage code 34168 for case outline 9. Editorial changes throughout.

lzl 24h

Abstract: pioneer PAL 007 A CNC DRIVES ford EEC V pioneer PEG 468 AM27S43 AM29300 am29325 Am29434 YA11
Contextual Info: a 32-Bit Microprosrammable Products Am29C300/29300 1 9 8 8 D ata B o o k Advanced Micro D e v ic e s a Advanced Micro Devices Am29C300/29300 Data Book 1988 Advanced Micro Devices Advanced Micro Devices reserves the right to make changes in its products without

QP7C185A-55DMB

Abstract: QP7C185A IDT7164L70L32B QP7C185A-70DMB qml-38535 MT5C6408C-20 5962-3829435 EDI8810L 0EU86 22 35L CAPacitor
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added changes in accordance with NOR 5962-R085-93 93-03-16 M. A. Frye F Added device types 45, 46, and 47. Removed CAGE code 34168 for case outline 8, and added cage code 34168 for case outline 9. Editorial changes throughout.

CDM6264-1

Abstract: BR6264 CDM6264 com6264 AKM6264ALP-12L intel 6264 AKM6264ALP-12 AKM6264ALP-15 AKMB264ALP-15L AKMB264AP-12
Contextual Info: - 84 6 4 K -i X fäfSEfcH m s tt * CC CMOS -, TAAC max ns) TCAC max (ns) TOE max (ns) TOH min (ns) fTOD max (ns) > r T*P min (ns) S t a t i c & R A M ( 8 19 2 X 8 ) it TDS min (ns) TDH min (ns) TWD min (ns) Tvn max (ns) V D D or V C C (V) 2 8 P I N I DD

Contextual Info: Am99C641 65,536 x 1 Static Read/W rite Random-Access Memory PRELIMINARY High-performance CMOS circuit High Speed - access times as Single 5-V ±10% power-supply Low power - 715 mW active 110 mW TTL - Standby design fast as operation and •process 2 V data retention for battery back up applications

Am99CL88H-15

Abstract: Am99C88H memory ic pt28c020-90
Contextual Info: ADV M I C R O { M E M O R Y } fll 0257528 ADV M IC R O MEMORY Ö i J 0ES7SSfl DOSStlfl T J ~ 89 D 25618 A m 9 9 C8 8 H & 8 1 9 2 x 8 CMOS Static Random-Access Memory PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS High Speed - 3 5 ns Commercial - 4 5 ns Military