AM27C1024 AMD Search Results

atmel 24c16a

Abstract: ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS
Contextual Info: GALEP-III Device List 2000-01-31 valid for version 1.17 page 1 of 1 D:\btl117.doc EPROM AMD AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 AM27C512 AM27C64 ATMEL AT27C/LV/BV010 AT27C/LV/BV020 AT27C/LV/BV040 AT27C/LV/BV256

Product Selector Guide

Abstract: AM27C1024-255 am27c1024
Contextual Info: FINAL Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance available ■ Fast access time ■ 100% Flashrite programming — 55 ns maximum access time ■ Low power consumption — Typical programming time of 8 seconds

Contextual Info: Am27C1024 Advanced Micro Devices 1 Megabit 65,536 X 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • High Speed Flashrite programming ■ Fast access time — 100 ns ■ JEDEC-approved 40-pin DIP and 44 pad LCC pinouts ±10% power supply tolerance available

Contextual Info: FINAL Am27C1024 1 Megabit 65 K x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance standard ■ Fast access time ■ 100% Flashrite programming — Speed options as fast as 55 ns ■ Low power consumption — Typical programming time of 8 seconds

Contextual Info: ADV MICRO M EM O R Y 3ÔE Q • 0257S2Ö DDS^Sbö 7 ■ T - 4 4 - IV 2 9 Am27C1024 AMD4 d Advanced Micro Devices 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrlte programming ■ Fast access time — 100 ns ■

WF009504

Contextual Info: DV MICRO I 14E MEMORY D I 0557520 DG57425 5 $ Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • • • ’• • • • • First EPROM offering 16 inputs and outputs Fast access time — 100 ns Low power consumption:

a1334

Contextual Info: FINAL AMDÌ1 Am27C1024 1 Megabit 65 K x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance standard ■ Fast access time — Speed options as fast as 55 ns ■ 100% Flashrite programming ■ Low power consumption — Typical programming time of 8 seconds

Contextual Info: AMD£I FINAL Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — 55 ns m axim um access tim e ■ Low power consumption — 100 |aA typical C M O S standby current ■ JEDEC-approved pinouts — 40-Pin D IP/PDIP

27C1024-90

Abstract: 27C102490
Contextual Info: Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — 85 ns — Typical programming time of 8 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

am27c1024

Abstract: am27c1024 amd
Contextual Info: a Am27C1024 Advanced Micro Devices 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ — 85 ns 100% Fiashrite programming — Typical programming time o l 8 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

Contextual Info: FINAL a Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 85 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from -1 V to

CLV044

Abstract: 56497
Contextual Info: ZI FINAL Am27C1024 Advanced Micro Devices 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from -1 V to

Contextual Info: FINAL Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from –1 V to

Contextual Info: Am27Cl024 6 5 ,5 3 6 x 1 6-Bit CMOS EPROM Am27C1024 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • Fast access time — 200 ns Low-power dissipation - 250 mW at 5_MHz - 1 mW at E CE = V cc ±0.3 • • • • Programming voltage— 12.5 ±0.3 V First EPROM offering 16-bit inputs and outputs

D0304

Abstract: T-46
Contextual Info: ADV MI CRO MEMORY 4ÖE 02S7S2Ö J> 003D4S3 h • AMD4 T - 46-13-29 Advanced Micro Devices A m 2 7 C 1 0 2 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrite programming ■ Fast access tim e — 100 ns ■ Low power consumption:

Contextual Info: ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number Valid Combination is formed by a combination of: a. Device Number b. Speed O ption (If applicable) c. Package Type d. Tem perature Range

Contextual Info: FINAL AMDZ1 A m 2 7 C 1 0 2 4 1 Megabit 65 K x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ Fast access time ■ ±10% power supply tolerance standard — Speed options as fast as 55 ns ■ Low power consum ption — Typical program m ing tim e of 8 seconds

Am27C1024

Contextual Info: 27 1024 Am C 1 Megabit 65,536 x 16-Bit CMOS EPROM ««¡¡gj Devicss DISTINCTIVE CHARACTERISTICS • • • • • • • • First EPROM offering 16 inputs and outputs Fast access time — 100 ns Low power consumption: - 2 0 0 itA maximum standby current

Contextual Info: Advanced Micro Devices A m 27C 1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Fiashrite programming ■ Fast access time — Typical programming time of 8 seconds — 70 ns ■ Latch-up protected to 100 mA from -1 V to ■ Low power consumption

AM27C1024

Contextual Info: ADV MI CRO MEMORY b4E D • DES7SEÖ □ □ 3 1 ci 71 5b4 Advanced Micro Devices A m 27C 1024 1 Megabit (6a,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 85 ns — Typical programming time of 8 seconds

AM27C1024

Abstract: ZDA11 06780-007E AM27C1024-155
Contextual Info: ADV MICRO MEMORY 33E D • 0 5 5 7 5 5 6 Q O gflflH b 1 ■ A M D 4 * T - 4 6 - 1 3 - 2 9 ' T - 4 4 - l 3 - 2 5 r A m 2 7 C 1 2 Advanced Micro Devices 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrlte p ro gram m in g

27C4002

Abstract: 27C210A M5M27C102J 32 pin plcc socket to dil AT27HC1024 AT27C1024L-J AT27C1024 AT27LV1024 AD44 AD60
Contextual Info: PRODUCT DATA SHEET AD44 Farnell 479-858 and AD60 Package Converters for Word Wide EPROMs (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD44 44 40 08 P .6 Clamshell Product Code Pins on skt Pins on Base Wiring

Flashrite

Abstract: amd EPROM Am27C4096 amd pin out EPROM AMD
Contextual Info: PROGRAMMING AMD’s CMOS EPROMs PROGRAMMING AMD’s CMOS EPROMs This section contains information on programming AMD CMOS EPROM devices, using AMD’s fast Flashrite programming algorithm. FLASHRITE PROGRAMMING METHODOLOGY AMD EPROMs are shipped from the factory fully

MB834000

Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Contextual Info: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010