MBM27C Search Results

Contextual Info: FUJITSU MIC RO ELEC TR ON IC S FUJITSU 23E D • 374ì?bH 000=1222 2 ■ CMQSir,Q48,576 Bl UV ERASABLBREA ONLY. MEMORYf EPROM MBM27C1001-15 MBM27C1001-20 MBM27C1001-25 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY (EPROM The Fujitsu MBM27C1001 EPROM Is a high speed read-only static memory that

MBM27C2000-15

Abstract: Fujitsu Ltd MBM27C2000
Contextual Info: FUJITSU LTD S3E D 374^7Sh D0a3bSb Ô5Ô W F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET MBM27C2000 -12/-15 CMOS 2M-BIT UV EPROM CMOS 2,097,152-BIT UV ERASABLE READ ONLY MEMORY EPROM The Fujitsu MBM27C2000 EPROM is a high speed read-only static memory that is

4afr

Contextual Info: March 1993 Edition 1.0 F u jfr s u DATA SH EET MBM27C4096- 12-x/-15-x CMOS 4M-BIT UV EPROM CMOS 4,194,304-BIT UV ERASABLE READ ONLY MEMORY The Fujitsu MBM27C4096 EPROM is a high speed read-only static memory that is UV-erasable and reprogrammable bits organized in a 262,144-word/16-bit format. The

eprom 2732A

Abstract: MBM2732A fujitsu uv erasable eprom MBM27C32 MBM27C32-25 MBM27C32-30
Contextual Info: FUJITSU m ic r o e l e c t r o n ic s CMOS 32,768-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY MBM27C32-25 MBM27C32-30 « < ^ {; INFORMAI ION DESCRIPTION The Fujitsu MBM27C32 is a high speed 32,768-bit static Comple­ mentary MOS erasable and elec­

bm27c4000

Contextual Info: APR 2 1993 March 1993 Edition 1.0 FUJITSU DATA SH EET MBM27C4000 -12-X/-15-X CMOS 4M-BIT UV EPROM CMOS 4,194,304-BIT UV ERASABLE READ ONLY MEMORY The Fujitsu MBM27C4000 EPROM is a high speed read-only memory that is UV-erasable and electrically programmable. The device contains 4,194,304 programmable or reprogrammable

v673

Contextual Info: FUJITSU niCROELECTRONICS 7fl "ÖF| 37Hc\lhE □□□3SG7 □ Jkjt y¿./3.2^ FU JITSU MOS M em o ries • M B M 2 7 C 2 5 6 -2 5 , M B M 2 7 C 2 5 6 -3 0 C M O S 32,768 x 8-Bit UV Erasable and Electrically Programmable Read Only Memory D es c rip tio n The Fujitsu MBM27C256 Is a high speed 262,144-bits complemen­

27C1000 eprom

Abstract: 27C1000 MBM27C1000-20 Fujitsu MBM27C1000 MBM27C1000 27c1000a MBM27C1001-15 MBM27C1000-15 MBM27C1000-25
Contextual Info: FU JITSU CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 A p ril 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY (EPROM) T he Fujitsu M BM 27C1000 EPROM Is a high spee d re a d -o n ly s ta tic m e m o ry th a t is

MBM27C64-25

Abstract: MBM27C64-25X tpH07 MBM2764 27C64-25 equivalent MBM27C64-30-W
Contextual Info: F U JIT S U MOS Memories • MBM27C64-25, MBM27C64-30 C M O S 65,536-Bit UV Erasable and Electrically Program m able Read Only Mem ory ¿n -Z / ^ L C c L D e s c rip tio n The Fujitsu MBM27C64 is a high speed 65,536-bit s ta tic Comple­ m entary MOS erasable and electrica lly reprogram m able read only

27C256A-20

Abstract: 27C256A-25 MBM27C256A-20 BM27C256A 27C256A20 MBM27C256A-15 Fujitsu 27C256A
Contextual Info: CM O S UV ERASABLE 262144-BIT READ ONLY MEMORY FU JITSU MBM27C256A-15 MBM27C256A-17 MBM 27C256A-20 MBM27C256A-25 September 1987 Edition 2.0 C M O S 262144 BIT U V E R A S A B L E A N D E L E C T R IC A L L Y P R O G R A M M A B L E R E A D O N LY M E M O R Y

MBM27C256-25

Abstract: M27C MBM27C256
Contextual Info: MOS Memories ff¡ £ 7 FUJITSU • M B M 27C 256-25, M B M 27C 256-30, M B M 27C 256-45 CMOS 32,768 X 8-Bit UV Erasable and Electrically Programmable Read Only Memory Description The Fujitsu MBM27C256 is a high speed 262,144-bits complementary MOS erasable and electrically reprogrammable read only memory

MBM27C256A-20

Abstract: MBM27C256A-15 M27C256A-20 MBM27C256A M27C256a MBM27C256A-25 27C256A-20 MBM27C256A-17 fujitsu uv erasable eprom 27C256A20
Contextual Info: V f- 2 1993 April 1990 Edition 3.0 FUJITSU DATA SHEET MBM27C256A -15/-17/-20/-25 CMOS 256K-BIT UV EPROM CMOS 262,144-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM27C256A is a high speed 262,144-bits complementary MOS erasable and

Contextual Info: MBM27C1001-20 1/2 IL00 * C-MOS 1M(131072x8)-BIT EPROM -TOP VIEW- 1 VPP VDD (+5V) 32 12 11 10 A16 IN 2 31 PGM IN 9 8 A15 IN 3 NC 30 7 6 A12 IN 4 29 A14 IN A7 IN 5 28 A13 IN 5 27 26 23 A6 IN 6 27 A8 IN 25 4 A5 IN 7 26 A9 IN 28 29 A4 IN 8 25 A11 IN

Contextual Info: CMOS UV ERASABLE 262144-BIT READ ONLY MEMORY FU JITSU MBM27C256A-15 MBM27C256A-17 MBM27C256A-20 MBM27C256A-25 S ep tem ber 1987 E d itio n 2.0 CMOS 262144 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C 256A is a high speed 262,144 bits com plem entary MOS

mbl80168

Abstract: 27S01 AD1-AD15 MBM27C1028-15 MBM27C1028-20 MBM27C1028-25
Contextual Info: FU JITSU CMOS 1 ,0 4 8 ,5 7 6 BIT UV ERASABLE READ ONLY MEMORY CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM MBM27C1028-15 MBM27C1028-20 MBM27C1028-25 S e p te m b e r 1988 Edition 1.0 The Fujitsu M BM 27C1028 EPROM Is a high speed re a d -o n ly s ta tic m e m o ry th a t is

tny 304

Contextual Info: 7 ^ ^ - / 3 ~;2 ¿? FUJITSU LTD S3E D Hi 374T7Sb 00032^7 4Ô4 BiFCAJ cP November 1990 Edition 1.0 FUJITSU — DATASH EET• MBM27C4000-12/-15/-20 CMOS 4M-BIT UV EPROM CMOS 4,194,304-BIT UV ERASABLE READ ONLY MEMORY

Contextual Info: _ F U JIT S U _ LTD - T - ^ G 53E j> m 3 7 4 ^ 751, 0Q 033ED bT7 - í 3 ~ 7 ~ ^ • F C A J ^ November 1990 Edition 1.0 FUJITSU DATA SHEET '■ MBM27C4096-12/-15/-20 CMOS 4M-BIT UV EPROM CMOS 4,194,304-BIT UV ERASABLE READ ONLY MEMORY The Fujitsu MBM27C4096 EPROM if * high speed read-only Hatic memory that ¡> UV-«rasable

27C40001

Contextual Info: FEB i 6 1953 iirrrf ¥ FUJITSU October 1992 Edit¡o n 3 .° DATA SHEET MBM27C4000 -12/-15 CMOS 4M-BIT UV EPROM CMOS 4,194,304-BIT UV ERASABLE READ ONLY MEMORY The Fujitsu MBM27C4000 EPROM is a high speed read-only memory that is UV-erasable and electrically programmable. The device contains 4,194,304 programmable or reprogrammable

dfv 36

Contextual Info: FUJITSU CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM MBM27C1001 -15 MBM27C1001 -20 MBM27C1001 -25 April 1988 Edition 2.0 1 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY (EPROM) The Fujitsu MBM27C1001 EPROM is a high speed rea d -o n ly s ta tic m em o ry th a t

Contextual Info: FU JITSU CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 April 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY (EPROM) The Fujitsu MBM27C1000 EPROM is a high speed read-only static memory that Is

Contextual Info: FUJITSU LTD / S3E T> • - V & - / 3 374^7Sb 000330^ T2b Ü Ü f c A J c O November 1990 Edition 1.0 - FUJITSU DATA SHEET ■ MBM27C4001-12/-15/-20 CMOS 4M-BIT UV EPROM CMOS 4,194,304-BIT UV ERASABLE READ ONLY MEMORY

MBM27C512-20

Abstract: mbm27c512 fujitsu 1988
Contextual Info: December 1990 Edition 1.0 FUJITSU DATA SHEET MBM27C5 1 2 20 - x CMOS 512K-BIT UV EPROM - CMOS 524,288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM27C512 is a high speed 524,288 bit static CMOS erasable and electrically reprogrammable read only memory EPROM . It is especially well suited for application where

MBM27C128

Abstract: 2U05 MBM27C128P-25
Contextual Info: FU JITSU CMOS 131072-BIT ONE TIME PROM MBM27C128P-25 September 1987 Edition 1.0 CMOS 128K <131,072 BIT ONE T IM E EL E C T R IC A L LY PROGRAM M ABLE READ O N L Y M EM O RY The Fujitsu MBM27C128P is a high speed 131,072 bits CMOS one time electrically programmable read only memory OTPROM). It is especially well

MBM27C128-25

Abstract: MBM27C128-20 mbm27c128
Contextual Info: MBM27C128-20 MBM27C128-25 Fig. 1 - MBM27C128 BLOCK DIAGRAME Oi Vpp CAPACITANCE t a = 25 Parameter Input Capacitance (V|N = 0V Output Capacitance (Vqut = 0V) 2 V qq Os gnd c , f = 1MHz) Symbol Min Typ Max Unit C|N - 4 6 PF COUT - 8 12 PF MBM27C128-20 MBM27C128-25

Contextual Info: * MBM27C1024-15 1/2 IL11 C-MOS 1M (65,536 X 16)-BIT UV EPROM - TOP VIEW 21 1 VPP VDD 40 (+5 V) 22 23 CE IN 2 39 PGM IN 24 25 D15 I/O 3 NC 38 26 27 D14 I/O 4 37 A15 IN D13 I/O 5 36 A14 IN 28 29 31 32 D12 I/O 6 35 A13 IN 33 34 D11 I/O 7 34 A12 IN