131072X8 Search Results
131072X8 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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29F100T
Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
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MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/21/1999 JUN/14/2001 29F100T 1 MEGA OHM RESISTOR MX29F100T 29f100 | |
MX29F100TContextual Info: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current |
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MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte FEB/04/1999 PM0548 MX29F100T | |
P1338Contextual Info: MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current |
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MX29F001T/B 131072x8 55/70/90/120ns 32K-Byte 64K-Byte JUN/14/2001 JUL/01/2002 JUL/09/2002 AUG/12/2002 PM0515 P1338 | |
29F100TContextual Info: ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz |
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MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0548 29F100T | |
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Contextual Info: MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current |
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MX29F001T/B 131072x8 55/70/90/120ns 32K-Byte 64K-Byte eras38 JUN/14/2001 JUL/01/2002 JUL/09/2002 PM0515 | |
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Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz |
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MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte CompatiPM0548 DEC/21/1999 | |
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Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz |
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MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/14/2001 NOV/12/2001 | |
29f001Contextual Info: MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current |
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MX29F001T/B 131072x8 55/70/90/120ns 32K-Byte 64K-Byte JUN/14/2001 JUL/01/2002 JUL/09/2002 AUG/12/2002 NOV/20/2002 29f001 | |
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Contextual Info: - _ W241024A Winbond 128K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W241024A is a high speed, low power CMOS static RAM organized as 131072x8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond’s high perfomance CMOS |
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W241024A 131072x8 600mW 32-pin | |
29F001
Abstract: nec flash device code marking on top MX29F001T MX29F001TQC-90 Macronix marking
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MX29F001T/B 131072x8 90/120ns 32K-Byte 64K-Byte resC/29/2003 29F001 nec flash device code marking on top MX29F001T MX29F001TQC-90 Macronix marking | |
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Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz |
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MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte 80ms-- 80us-- | |
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Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz |
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MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/14/2001 NOV/12/2001 | |
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Contextual Info: MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current |
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MX29F001T/B 131072x8 90/120ns 32K-Byte 64K-Byte thatUL/01/2002 JUL/09/2002 AUG/12/2002 NOV/20/2002 DEC/29/2003 | |
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Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz |
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MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte single-pow003 PM0548 | |
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Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz |
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MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte 80us-- 100us | |
W241024Contextual Info: W241024 Winbond 128K X 8 CMOS STATIC RAM GENERAL DESCRIPTION The W241024 is a slow speed, low power CMOS static RAM organized as 131072x8 bits that operates SlowSlKfid on a single 5-volt power supply. This device is manufactured using W inbond's high performance CMOS rune cdaiic |
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W241024 131072x8 300mW 10//W 32-pin 600mil 450mil W241024-70LL W241024-10L | |
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Contextual Info: IJVinbond W241024A .— - 128K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W241024A is a high speed, low power CMOS static RAM organized as 131072x8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond’s high perfomance CMOS |
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W241024A W241024A 131072x8 600mW 32-pin A0-A16 W241024AK-15 W241024AK-20 W241024ARK-15 | |
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Contextual Info: « 6 I B W Ê Î j f t W231024 Winbond 128K X 8 MASK ROM DESCRIPTION FEATURES The W231024 is a High Speed Mask-Programm • Power Consumption : able Read-Only Memory Active : 175mW Typ. Organized as 131072 X 8 Bits and Operates on a Single • Access Time : 200/300 ns (Max.) |
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W231024 175mW W231024 B-1930 | |
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Contextual Info: INDEX NEW ADVANCED INFORMATION MX29F001T/B 1M-BIT [128K x 8]CMOS FLASH MEMORY FEATURES • Status Reply – Data polling & Toggle bit for detection of program and erase cycle completion. • Chip protect/unprotect for 5V only system or 5V/12V system • 100,000 minimum erase/program cycles |
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MX29F001T/B 131072x8 70/90/120ns 32K-Bytex1, 64K-Byte PM0515 | |
CSTCE8M00G15
Abstract: 8B103 CSTCE10M0G15 CSTCE12M0G15 CRC16 mc 3055 INT5130 27p06 cstcr6m00g15
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LC87F14C8SA FROM128K RAM10240 81USB LC87F14C8SA 10240RAM, 812AD 12PWM 12MHz) 250ns CSTCE8M00G15 8B103 CSTCE10M0G15 CSTCE12M0G15 CRC16 mc 3055 INT5130 27p06 cstcr6m00g15 | |
LC87F67C8A
Abstract: 82701 81
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LC87F67C8A 14-chads LC87F67C8A 82701 81 | |
BCM 4709
Abstract: 78F1830 78F1834 78f1835 78f1845 78F1804 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841
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78K0R/Fx3 78K0R/FB3: PD78F1804 78F1805 78F1806 78F1807 78F1804 BCM 4709 78F1830 78F1834 78f1835 78f1845 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841 | |
LC87F67C8A
Abstract: W87FQ100 N1502 727816
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N1502 LC87F67C8A FROM128K RAM4096 100ns LC87F67C8A) N1502 LC87F67C8A W87FQ100 727816 | |
HN462532G
Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
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