AM 5544 Search Results

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.75 (am Process (Lel(= 0.6 |am) • Read/Write Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C)

500w pioneer power amp circuit diagram

Abstract: 600va ups circuit diagrams ELECTRONIC BALLAST DIAGRAM for PL-C 26W Electronic ballast 40W using 13005 transistor hp 3120v METAL HALIDE 400W schematic diagram Electronic Ballast Metal Halide 27W08MB 68W81 a 3120v
Contextual Info: 002-003 Specials Ad spread 5/13/05 9:15 AM Page 2 002-003 Specials Ad spread 5/13/05 9:15 AM Page 3 PORTABLE LIGHTING Whatever your lighting conditions, wherever your location, chances a re Woodhead makes the portable light that best serves your needs. F rom fluorescent hand lamps for routine task lighting to the

SOOW 12-4 IF

Abstract: electronic ballast schematic 12volt schematic diagram Electronic Ballast Metal Halide 8R4006 ELECTRONIC BALLAST T5 8w LAMP SCHEMATIC LR6837 LT 9228 500w dc to dc supply 150w hid electronic ballast schematic circuit diagram 92536N
Contextual Info: 002-003 Specials Ad spread 5/13/05 9:15 AM Page 2 002-003 Specials Ad spread 5/13/05 9:15 AM Page 3 PORTABLE LIGHTING Whatever your lighting conditions, wherever your location, chances a re Woodhead makes the portable light that best serves your needs. F rom fluorescent hand lamps for routine task lighting to the

Contextual Info: LITTON IND/LITTON SOLID SbE D 5544200 ODDQMTb SÔD • LITT J Z - ([ ■ GUNN DIODES HIGH FREQUENCY 22 to 110 GHz FEATURES • • • • • • GaAs and InP Devices High Efficiency Low Package Parasitics High Reliability Low FM and AM Noise Good Power and Frequency Stability

Contextual Info: DUO-TOUCH ฀–฀Two-Hand฀Control฀Modules Features •฀

Contextual Info: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)

72284

Contextual Info: AM P Premises Power and Electrical Building Products Part Number Index Catalog 889140 5 -or Note: The numerical index lists all parts by base series no only. Complete part nos. {with prefixes and/or suffixes) are shown on the page(s) indicated. Part Number

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |im Low Power Process (Leff= 0.5 |am) • Read/Write Cycle Times < 25 ns (-55 to 125°C)

EN574

Abstract: ISO13851 OTBVR81 EN954-1 ISO13849-1 ISO13855
Contextual Info: DUO-TOUCH – Two-Hand Control Modules Models AT-FM-2A, AT-AM-2A, and AT-BM-2A, for Use with Two Actuating Devices Features • Two redundant, forced-guided mechanically linked output contacts rated at 4 A • One auxiliary N.C. relay output rated at 0.5 A

Contextual Info: M/A-COM AI>V SEMICONDUCTOR Am 57E D 5bM21fl3 0ÜDDE32 5 T 'S / - // MA4GM202F-500 2000 2012 2100 MA4GM202F SERIES GaAs M M IC D C -4 SPDT Switch Features • BROADBAND: DC - 4 GHz ■ CURRENT CONSUMPTION <100 /¿A ■ 3 NANOSECOND SWITCHING ■ EXCELLENT INTERMODULATION

Contextual Info: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)

Contextual Info: Honeywell Military & Space Products 32K x 8 ROM— SOI HX6656 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |am Process (Leff = 0.6 |im) • Read Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)

Contextual Info: HONEYÜI ELL/ S S E C 3ÖE D D 4SS1Ô72 GQOOSSfl 1 HH0N3 Advance Information 16K x 1 MAGNETORESISTIVE RAM MRAM T ^ fc -^ -O S T FEATURES Non-volatile 250 ¡as Read Cycle Time Fabricated with RICMOS 1.2 |am Process 400 ns Write Cycle Time Write Cycles in Excess of 1x1015

Contextual Info: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • • 1 K x 36, 2 K x 18, 4 K x 9 O rganizations Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 j^m Process (Leff = 0.65|am) OTHER • R ead/W rite Cycle Tim es <35 ns (-55° to 125°C)

ignitron philips pl 5544

Abstract: PL5544 thyratrons Thyratron Thyratron 5544 Ignitron 40403 HT 1000 4 ignitron philips 4061
Contextual Info: PL 5544 PHILIPS THYRATRON, xenon-filled triode THYRATRON, triode à remplissage de xénon STROIvîTORRÔHRE, Triode mit Xenonfüllung Application: motor control, ignitron firing service Applications réglage de moteurs, circuits d ’amorçage des ignitrons

ST37 steel metal

Abstract: turck 1-800-544-7769 barrel sensor ST37 steel aisi 316l N3000 turck 1-800-544-7769
Contextual Info: ñEdition: TURCK Inc. ñ3000 Campus Drive Minneapolis, MN 55441-2656 ñPhone: 763-553-7300 ñApplication Support: 1-800-544-7769 ñFax 763-553-0708 ñwww.turck.com inductive sensor with stainless steel front cap Bi10-EM30F-AN6X-H1141 M30 x 1,5 36/5 ● threaded barrel, M30x1

transducer 61326

Abstract: CISPR class B conducted
Contextual Info: SUPPLIER DRAWING SD SPECIFICATION H O N E Y W E L L SOLID STATE ELECTRONICS CENTER MINNEAPOLIS, MINNESOTA 55441 Federal Cage Code No. 22024846 34168 TITLE: PPTR, CE SUPPLEMENT, EN 61326-1 PREPARED BY G. Monzo DATE 4/24/02 ORIGINATOR APPROVED BY DATE J. Dcamp

Contextual Info: LITTON IND/LITTON SOLID Litton SbE D • 5544200 0000522 4T2 ■ L I T T Low -D isto rtion /M ed iu m Pow er M ic ro w a v e G a A s FET Electron Devices D-6836 Preliminary Specifications FEATURES @ 18 g h z ■ O utput Power 21 ■ IdB Power Gain 6.5 dB @ 18 GHz

twinaxial

Abstract: amp 1-554000-7
Contextual Info: AMP AMP Four Position Data Connector and Related Products for 150 Ohm Shielded Twisted Pair Applications Catalog 82167 Revised 3 96 Product Facts • Insulation displacement contacts ■ M ulti-w ire/m ulti-cable range; 22-30 AWG solid or stranded ■ Toolless assembly

hartwell

Abstract: Western Electric 300b airtronic 5501 TEXAS PLYMOUTH STC CT 510 063 Tekelec airtronic
Contextual Info: là PER ¡COM Sales Representatives and Distributors CORPORATE HEADQUARTERS Pericom Semiconductor Corporation 2380 Bering Drive, San Jose, CA95131 408 435-0800 408 435-1100 Fax EUROPEAN OFFICE SOUTHWESTERN OFFICE SOUTHEASTERN OFFICE SOUTHCENTRAL OFFICE NORTHEAST & CANADA

AXP 209 IC

Abstract: sem 2105 16 pin AXP 202 AEG T 51 N 1200 77480 48409 IC SEM 2105 Pioneer PA 0016 94-4033 sem 2105
Contextual Info: Tem ic Sales Offices Semiconductors Addresses Europe Poland Sweden TE M IC TELEFU N K EN m icroelectronic Gm bH Theresienstrasse 2 74072 H eilbronn Postfach 3535, PLZ 74025 Tel: 49 7131 67 3737 Fax: 49 7131 672444 TEM IC TE LE FU N K E N m icroelectronic Gm bH

str f 6456

Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Contextual Info: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH

J 5027-R

Abstract: Dlink 526b bc 540b ch9i 5027-r Power DIODE A30 8155 intel microprocessor block diagram 55A6 marking 55a4 0x10-Timer
Contextual Info: Advance Information CX29503 Broadband Access Multiplexer BAM Re vi e w This document contains information on a product under development. The parametric information contains target parameters that are subject to change. Distinguishing Features • Capacity

TFK U 3212 M

Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Contextual Info: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro ­ electro n ic G m bH K ruppstrasse 6