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    AM 2716 DATA SHEET Search Results

    AM 2716 DATA SHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2716M/B
    Rochester Electronics LLC 2716M - 2Kx8 EPROM PDF Buy
    MD2716-45/B
    Rochester Electronics LLC 2716 - 2K X 8 EPROM PDF Buy
    54HC152J/B
    Rochester Electronics LLC 54HC152 - 8 to 1 Line Data Selectors/Multiplexers PDF Buy
    54LS298/BEA
    Rochester Electronics LLC 54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BEA) PDF Buy
    54S153/BEA
    Rochester Electronics LLC 54S153 - DATA SEL/MULTIPLEXER, DUAL 4-INPUT - Dual marked (M38510/07902BEA) PDF Buy

    AM 2716 DATA SHEET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Ergebnisseite der Teileliste Partlist 09 14 005 2716 Module for female contacts other series Type of frame Type of module Contacts Voltage Current Hinged Frame for Han Modular Han ES-module 5 contacts with cage-clamp termination 400V~ 16 A The data sheet is up to date


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    /george/hkcgi174 PDF

    op closed-loop 80MHZ

    Abstract: VA2716J VA2716S 2C3180
    Contextual Info: VA2716 LSP FAMILY DATA SHEETS DUAL H IG H -S P EE D , FA ST-SETTLIN G O PERATIO NAL AM PLIFIER FEATURES • Complete Dual Version of VA706 Fast-Settling Op Amp • Dual Includes Balance for Both Amplifiers • Fast Settling Time: ±0.1% in 200ns • High Slew Rate: 42V/ns


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    va2716va706200ns25mhz+7theva70610mhz100mhzop closed-loop 80mhzva2716jva2716s2c3180 PDF

    HSP50415

    Abstract: HSP50415EVAL1 HSP50415VI Q100
    Contextual Info: HSP50415 ADV ANCE I NF O R MA T ION Data Sheet January 2000 Wideband Programmable Modulator WPM File Number 4559.3 Features • Output Sample Rates to 100MSPS The HSP50415 Wideband Programmable Modulator (WPM) is a quadrature amplitude modulator/upconverter designed


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    hsp50415100msps16-bithsp50415eval1+2hsp50415viq100 PDF

    MOSTEK ROM

    Abstract: MOSTEK MEMORY MK2716 MK2716-12 MK34000 MK3880
    Contextual Info: MQSTEK ff? 2048 x 8-BIT EPROM Electrically Programmable/Ultraviolet Erasable ROM MK2716 J -12 FEATURES □ Three State O utput OR-tie capability □ 16,384 Bit U ltraviolet Erasable E lectrically Program ­ mable ROM organized as 2,048 w ords by 8 bits □ Five modes of operation fo r greater system fle xib ility


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    mk2716mk2716-12650ns525mw+5132mwmostek rommostek memorymk34000mk3880 PDF

    2708 eprom

    Abstract: memory EPROM 2708 EPROM 2732 F3533 2732 eprom 2732 EPROM specification EPROM 2732 32K eprom 2716
    Contextual Info: F3532/F68332 F3533 4096 x 8 ROM FAIRCHILD A Schlumberger Company M icroprocessor Product Logic Symbol Description The F3532/F68332 and F3533 are 4096 x 8 -bit maskn-channel silicon gate technology. They are designed for use in bus-organized systems requiring non-volatile data


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    f3532/f68332f35332708 eprommemory eprom 2708+5eprom 27322732 eprom2732 eprom specificationeprom 2732 32keprom 2716 PDF

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


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    transistor c3866zener phsec e13009ups circuit schematic diagram 1000w+6e13007 2e13007c3866 power transistortexas ttl74l505transistor c3246 PDF

    2816 eeprom

    Abstract: intel 2816 eeprom CI EEPROM 2816 eeprom 2816 intel 2816 2kx8 2716 te2025 INTEL D 2816 B 2716 D EEPROM intel eprom 2716
    Contextual Info: INST R U M I.M ER5916 ER5916IR ER5916HR PRELIMINARY INFORMATION Word Alterable 16K Bit Electrically Erasable and Programmable ROM FEA TU RES No high voltages — +5V only operation in ail modes E lectrically Word or B lock Erasable 2048 w ord x 8 bit organization, fu lly decoded


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    er5916er5916irer5916hr300ns+12ers91i6hra0-a102816 eepromintel 2816 eepromci eeprom 2816eeprom 2816intel 28162kx8 2716te2025intel d 2816b 2716 d eeprom inteleprom 2716 PDF

    SCB10H

    Abstract: SCB10H-B012FB capacitive pressure sensor medical MEMS "capacitive pressure sensor" 1251 MEMS pressure sensor BC001 sensor co
    Contextual Info: SCB10H SERIES 1.2 BAR Doc. 82 1251 00 A Data Sheet CAPACITIVE ABSOLUTE 1.2 BAR SCB10H-B012FB PRESSURE SENSOR ELEMENT Features •      Applications Small size 1.4 x 1.4 x 0.85 mm w x l x h High isolation resistance and low passive capacitance enables very low power


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    scb10hscb10h-b012fb10pthpb-118+6capacitive pressure sensor medicalmems "capacitive pressure sensor1251mems pressure sensorbc001sensor co PDF

    2948B

    Abstract: Avionics
    Contextual Info: Avionics Option 25 Avionics option for the 2948B Low Phase Noise Communications Service Monitor Communication and ramp testing of military and commercial aircraft in one instrument • Avionics modes for ILS, VOR, marker beacons and SELCAL • Displays in avionics terms: SDM, DDM,


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    2948bavionics PDF

    Contextual Info: FSYA450D, FSYA450R Semiconductor March 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    fsya450dfsya450r1-800-4-harris PDF

    1 L 0380 R

    Contextual Info: FSYA150D, FSYA150R Semiconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    fsya150dfsya150r1-800-4-harris1 l 0380 r PDF

    Contextual Info: FSYA150D, FSYA150R S e m iconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    fsya150dfsya150r1-800-4-harris PDF

    one chip tv ic 8823

    Abstract: how to interface 8085 with 8155 8275 crt controller intel processor 8035 practical circuits block diagram of intel 8155 chip Peripheral interface 8155 notes schematic diagram ic 8823 Intel 8275 INTEL D 2816 8051 interface 8155
    Contextual Info: S.A. D istribu tor LECTRONIC B U IL D IN G vE L E M E N T S t PJYJmJ -T D T e le p h o n e : 4 6 - 9 2 2 1 /7 n AAHQ PrPtOT Pine Square 1 8 th S tre e t C j quantum electronic^ »ox 391262 B ra m U y . in t e l 2018 e 2p r o m f a m il y APPLICATIONS HANDBOOK


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    130015

    Abstract: S125 VA2716J VA2716S
    Contextual Info: V T C IN C TTD D I 9388929' V T C Ii 3 û â li E c:] □DG12ÔÛ b J ~ IN C 99D 01288 VA2716 T-*7<J-rv7 DUAL HIGH-SPEED, FAST-SETTLING OPERATIONAL AMPLIFIER FE A TU R ES • Complete Dual Version of VA706 Fast-Settling Op Amp • Dual Includes Balance for Both Amplifiers


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    va706200ns25mhzva2716+6theva706ds032-5m8861130015s125va2716jva2716s PDF

    Contextual Info: FRS9240D, FRS9240R, FRS9240H 7A, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 7A, -200V, RDS on = 0.735£i TO-257AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)


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    frs9240dfrs9240rfrs9240h-200v+5o-257aa100krad300krad1000krad3000krad PDF

    Contextual Info: The NCO as a Stable, Accurate Synthesizer Technical Brief May 1998 TB318.1 Low Jitter Frequency Reference HARMONIC AM 2fC fCLK effective for applications requiring phase jitter of less than 5ns, however, since it requires a sample rate of 200 Mega Samples Per Second, MSPS , which drives the user to an


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    tb318fo-007hsp50110hsp50210 PDF

    Three phase sine wave oscillator

    Abstract: TB318 HSP45106 HSP45116
    Contextual Info: The NCO as a Stable, Accurate Synthesizer Technical Brief May 1998 TB318.1 Low Jitter Frequency Reference In communication and other circuits, it is often necessary to produce an accurate reference signal whose frequency and phase can be precisely controlled in real time. The Numerically Controlled Oscillator NCO is ideally suited for this purpose. For some applications, the output reference signal is a


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    tb318three phase sine wave oscillatorhsp45106hsp45116 PDF

    AN520

    Abstract: hi-201-5 harris HI-201-5 harris hi2 200-5 AN5577 HI-201-4 harris 201 HI201-5 201-5 Harris QN12
    Contextual Info: HI-200, HI-201 Data Sheet July 1999 File Number 3121.3 Dual/Quad SPST, CMOS Analog Switches Features HI-200/H1-201 dual/quad are monolithic devices comprising independently selectable SPST switches which feature fast switching speeds (HI-200 240ns, and HI-201 185ns)


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    hi-200hi-201hi-200/h1-201240ns+13185nshi-200/hi-2011-800-4-harrisan520hi-201-5 harrishi-201-5harris hi2 200-5an5577hi-201-4harris 201hi201-5201-5 harrisqn12 PDF

    Contextual Info: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1999 File Number 4250.4 Features • 7 0 A , 60V, rQg ONi = 0 .0 1 2£2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a


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    fsj055dfsj055r1-800-4-harris PDF

    CA139A

    Abstract: CA339 CA139 CA239 datasheet for comparator ic lm339 CA0139E CA0139M CA0239M96 LM2901 LM3302
    Contextual Info: CA139, CA139A, CA239, CA339, LM339, LM2901, LM3302 Data Sheet October 1999 Quad Voltage Comparators for Industrial, Commercial and Military Applications The devices in this series consist of four independent single or dual supply voltage comparators on a single monolithic


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    ca139ca139aca239ca339+7lm339lm2901lm3302datasheet for comparator ic lm339ca0139eca0139mca0239m96 PDF

    Contextual Info: FSL923A0D, FSL923A0R f f X R R /S Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999 File Num ber 4359.2 Features • 5A, -200V, rQg ONi = 0.670J2 • Total Dose The Discrete Products Operation of Harris has developed a


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    fsl923a0dfsl923a0r-200v670j2+11-800-4-harris PDF

    Contextual Info: HA-2406 Semiconductor April 1999 Data Sheet 30MHz, Digitally Selectable Four Channel Operational Amplifier The HA-2406 is a monolithic device consisting of four op amp input stages that can be individually connected to one output stage by decoding two TTL lines into four channel


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    ha-240630mhz1-800-4-harris PDF

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    transistor cross referencempt3n40westinghouse scr handbooklt 8224 zener diode+6sje389n9602nnpn transistor rca 467tfk 7 segment displaysput 2n6027delco 466 PDF

    ca3189e

    Abstract: CA3189 IC CA3189E TOKO kacs 10.7MHz fm coil HARRIS SEMICONDUCTOR APPLICATION NOTES
    Contextual Info: tfV W CA3189 S FM IF System May 1999 Features Description • Includes IF Amplifier, Quadrature Detector, AF Preamplifier, and Specific Circuits for AGC, AFC, Tun­ ing Meter, Deviation-Noise Muting, and ON Channel Detector The Harris CA3189E is a monolithic integrated circuit that


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    ca3189ca3189e1-800-4-harrisic ca3189e+2toko kacs 10.7mhz fm coilharris semiconductor application notes PDF