2816 eeprom
Abstract: intel 2816 eeprom CI EEPROM 2816 eeprom 2816 intel 2816 2kx8 2716 te2025 INTEL D 2816 B 2716 D EEPROM intel eprom 2716
Contextual Info: INST R U M I.M ER5916 ER5916IR ER5916HR PRELIMINARY INFORMATION Word Alterable 16K Bit Electrically Erasable and Programmable ROM FEA TU RES No high voltages — +5V only operation in ail modes E lectrically Word or B lock Erasable 2048 w ord x 8 bit organization, fu lly decoded
|
OCR Scan
|
er5916er5916irer5916hr300ns+12ers91i6hra0-a102816 eepromintel 2816 eepromci eeprom 2816eeprom 2816intel 28162kx8 2716te2025intel d 2816b 2716 d eeprom inteleprom 2716
|
PDF
|
C1213
Abstract: ER5816 ER5916 ER5916HR memory 2716
Contextual Info: ER5916 • ER5916IR ■ ER5916HR INSTI PIN CONFIGURATION DEVICE ER5816 2716 PIN CÊ 18 (20) (21) R EAD VlL v„. +5 - — +25 BYTE ERASE _ B Y T E W R ITE Pulsed ÜË ÜË (20) Vpp (21) I/O (18) D out VlL VlL +4 to +6 D out V il — v iL V rH +21 Vi h V il
|
OCR Scan
|
er5916er5916hrer5816a0-a10+311-bitc1213memory 2716
|
PDF
|
intel 2816 eeprom
Abstract: 2816 EEPROM B 2716 D EEPROM intel 2716 eprom intel 2816 eeprom 2816 eeprom 2716 eprom 2716 INTEL D 2816 intel 2716 eprom
Contextual Info: i l NI KAI IN SI R U M I N I ER5816 ER5816IR ER5816HR PR ELIM IN A R Y INFO RM ATIO N Word Alterable 16K Bit EElectrically Erasable and Programmable ROM FEA TU RES 5 V o p e ra tio n in re a d m od e E le c t r ic a lly W ord o r B lo c k E ra s a b le 2048 w o rd x 8 b it o r g a n iz a tio n , f u lly d e c o d e d
|
OCR Scan
|
er5816er5816irer5816hr300ns+12a0-a1011-bitintel 2816 eeprom2816 eepromb 2716 d eeprom intel2716 epromintel 2816eeprom 2816eeprom 2716eprom 2716intel d 2816intel 2716 eprom
|
PDF
|