ALL TYPE TRANSISTOR EQUIVALENT Search Results

TE1055

Abstract: TE1203 transistor DF 50
Contextual Info: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of

TE1509

Abstract: TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE
Contextual Info: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of

LM 3041

Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
Contextual Info: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.

Contextual Info: T O SH IB A 2SC4207 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4207 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. U nit in mm + 0.2 2.8 -0 .3 Sm all Package (Dual Type) 1. 6 High Voltage and High current : V 0 eO = 5OV, I ç = 150mA (Max.)

2N2222AUE1

Abstract: 2N2222A JANTX 2N2222A JANTXV sot-23 npn marking code cr 2N2222A JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 2N2222A 331
Contextual Info: INCH-POUND MIL-PRF-19500/672 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.

19Sg

Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
Contextual Info: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.

2N501A

Abstract: ATI 1026 340nm RNW transistor
Contextual Info: &ffL-S-19500/62B 26 July 1968 WJPERSEDfNG MIL-%19500/63A 15 June 1961 M3f,fTARY SEMICONDUCTOR DEVICE, SPEIXFICATION TRANSISTOR, TYPE PNP, GERMANTUM, LOW-POWER 2N501A This specification i8 mandatory for use by all Departments gencfa of he Department of Defense.

2n7505

Abstract: IRF5Y9540CM
Contextual Info: INCH-POUND MIL-PRF-19500/748 3 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.

2n7508

Abstract: IRF5NJ6215 transistor smd marking 431
Contextual Info: INCH-POUND MIL-PRF-19500/751 27 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7508U3, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.

2n7507

Abstract: IRF5NJ3315 BL 15 SMD
Contextual Info: INCH-POUND MIL-PRF-19500/750 17 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7507U3, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.

Contextual Info: TOSHIBA TENTATIVE SSM3J05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J05FU POWER MANAGEMENT SWITCH U nit in mm HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 • Sm all Package • Low on Resistance 1.2510.1 : Ron = 3.3 Cl Max. @ V q§

Contextual Info: TO SH IBA SSM3J02F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J02F POWER MANAGEMENT SWITCH U nit in mm HIGH SPEED SWITCHING APPLICATIONS + 0.5 2.5-0.3 + 0.25 1.5-0.15 Sm all Package Low on Resistance : Ron = 0.5 Cl Max. (@VQg = —4 V)

transistor a719

Abstract: A719 4392 ic equivalent 2N3904
Contextual Info: MIL-S-19500/529 EL 10 May 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3904 This specification is approved for use by the Electronics Command, Department of the Army, and is available for use by all Departments and Agencies of the Department of Defense.

germanium transistor pnp

Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
Contextual Info: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies

ILS 404 CB

Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.

army sc-c-179495

Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
Contextual Info: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De­ partments and Agencies o f the Department o f Defense.

mwab

Abstract: 2N706 transistor 2n706 2n706 transistor mwab 3.3
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.

Contextual Info: TOSHIBA SSM3K01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K01F HIGH SPEED SWITCHING APPLICATIONS U nit in mm • Sm all Package • Low on Resistance Ron = 120 m il Max (VGS = 4 V) Ron = 150 mO (Max) (VGS = 2.5 V) • Low Gate Threshold Voltage

K 2056 transistor

Abstract: pnp germanium transistor BUL 3810 2N331 Germanium Transistor 2N3317
Contextual Info: MIL -£ -19500/4D 1 Ü November 1966 SUPERSEDING MIL-S-19500/4C 17 January 1962 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N331 This specification is mandatory for use by all D epart­ ments and Agencies of the Department of Defense.

2N526

Abstract: FSC-5961 2n526 transistor FSC5961
Contextual Info: MIL -S - 19500/60E 19 March 1970 SUPERSEDING MIL-S-19500/60D 28 M arch 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N526 This specification is m andatory for use by all D epart­ m ents and Agencies of the D epartm ent of D efense.

OC 74 germanium transistor

Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
Contextual Info: oKr» 1 TT _c_i QKnn/1 W/ 16t/U 1 .Tuna 1967 SUPERSEDING MIL -S-19500/125B 3 Mav 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is m andatory for use by all D epart­ m ents and Agencies of the Department of Defense.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2802 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 8 7 6 5 3 4 0.32±0.05 RDS on 2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 9 A) • Thin type surface mount package with heat spreader • RoHS Compliant 0.35 0.2 MAXIMUM RATINGS (TA = 25°C, All terminals are

PA2801

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2801 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 8 7 6 5 3 4 0.32±0.05 RDS on 2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Thin type surface mount package with heat spreader • RoHS Compliant 0.35 0.2 MAXIMUM RATINGS (TA = 25°C, All terminals are

SSM6K06FU

Contextual Info: TO SH IBA SSM6K06FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6K06FU HIGH SPEED SWITCHING APPLICATIONS U n it in mm 2.1 i 0.1 • Sm all Package • Low on Resistance : Ron = 160 m il M ax. @ V Q g = 4 V : Ron = 210 m i) M ax. (@ V G S = 2-5 V)