ALL TRANSISTOR DATABOOK Search Results

ALL TRANSISTOR DATABOOK Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
27S185DM/B	Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

ALL TRANSISTOR DATABOOK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
circuit for using uc1725 Contextual Info: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power	Original	UC1725 UC2725 UC3725 UC1724, circuit for using uc1725	PDF
Contextual Info: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power	Original	UC1725 UC2725 UC3725 UC1725 UC1724,	PDF
92048 Abstract: UC3725N DIL-16 PLCC-20 SOIC-16 UC1724 UC1725 UC2725 UC3725 Contextual Info: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power	Original	UC1725 UC2725 UC3725 UC1725 UC1724, 92048 UC3725N DIL-16 PLCC-20 SOIC-16 UC1724 UC2725 UC3725	PDF
Contextual Info: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power	Original	UC1725 UC2725 UC3725 UC1724,	PDF
6 pin DIL And Gate Abstract: 92048 UC3725 circuit for using uc1725 DIL-16 PLCC-20 SOIC-16 UC1724 UC1725 UC2725 Contextual Info: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power	Original	UC1725 UC2725 UC3725 UC1725 UC1724, UDG-92052 UDG-92053 6 pin DIL And Gate 92048 UC3725 circuit for using uc1725 DIL-16 PLCC-20 SOIC-16 UC1724 UC2725	PDF
92048 Abstract: DIL-16 PLCC-20 SOIC-16 UC1724 UC1725 UC2725 UC3725 6 pin DIL And Gate Contextual Info: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power	Original	UC1725 UC2725 UC3725 UC1725 UC1724, 92048 DIL-16 PLCC-20 SOIC-16 UC1724 UC2725 UC3725 6 pin DIL And Gate	PDF
4E smd diode Abstract: Zener diode quad surface mount smd schottky diode A2 SOD-123 Schottky Diode SOT-89 smd transistor 662 composition of material used in zener diode smd transistor 662 x SMD transistor 123 CMPZDC47V CMXZ47VTO Contextual Info: N ew To T he 2 □□< 4 E di ti on New additions to the 2004 SMD Databook The following pages outline the latest additions to this edition of the surface mount devices databook. Over 90 new devices manufactured by Central Semiconductor have been added, as well as the new material composition data section. To keep up to date on all the latest	OCR Scan	chMXD2004TO CMSH1-40M OT-89 4E smd diode Zener diode quad surface mount smd schottky diode A2 SOD-123 Schottky Diode SOT-89 smd transistor 662 composition of material used in zener diode smd transistor 662 x SMD transistor 123 CMPZDC47V CMXZ47VTO	PDF
2N3823 equivalent Abstract: transistor 2N3824 2N3821 2N3822 equivalent 2N5021 maximum idss transistor 2N5460 transistor 2N5461 2N3822 2N3823 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-18 F-18 01/99 NJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA	Original	2N3821, 2N3822 2N3823, 2N3824 2N4222, 2N4222A 2N3823 equivalent transistor 2N3824 2N3821 2N3822 equivalent 2N5021 maximum idss transistor 2N5460 transistor 2N5461 2N3822 2N3823	PDF
pt100/RTD PT100 Abstract: rtd ic circuit diagram temperature measurement rtd rtd pt100 sensor signal conditioning circuit for pt100 4-20 mA rtd pt100 4-20ma wiring diagram RTD SENSING CIRCUIT 4-20mA PT100 IEC 751 PT100 bridge rtd circuit of output 5v circuit Contextual Info: XTR105 XTR 105 XTR 105 www.burr-brown.com/databook/XTR105.html 4-20mA CURRENT TRANSMITTER with Sensor Excitation and Linearization FEATURES APPLICATIONS ● LOW UNADJUSTED ERROR ● TWO PRECISION CURRENT SOURCES 800µA EACH ● INDUSTRIAL PROCESS CONTROL	Original	XTR105 com/databook/XTR105 4-20mA Pt100 30nAp-p 110dB 14-PIN SO-14 RCV420 pt100/RTD PT100 rtd ic circuit diagram temperature measurement rtd rtd pt100 sensor signal conditioning circuit for pt100 4-20 mA rtd pt100 4-20ma wiring diagram RTD SENSING CIRCUIT 4-20mA PT100 IEC 751 PT100 bridge rtd circuit of output 5v circuit	PDF
RTD SENSING CIRCUIT 4-20mA Abstract: scada POWER DISTRIBUTION DIAGRAM TIP29C XTR105 XTR105P XTR105PA XTR105U XTR105UA pt100 to 4-20 ma ic rtd pt100 4-20ma connections Contextual Info: XTR105 XTR 105 XTR 105 www.burr-brown.com/databook/XTR105.html 4-20mA CURRENT TRANSMITTER with Sensor Excitation and Linearization FEATURES APPLICATIONS ● LOW UNADJUSTED ERROR ● TWO PRECISION CURRENT SOURCES 800µA EACH ● INDUSTRIAL PROCESS CONTROL	Original	XTR105 com/databook/XTR105 4-20mA Pt100 30nAp-p 110dB 14-PIN SO-14 RCV420 RTD SENSING CIRCUIT 4-20mA scada POWER DISTRIBUTION DIAGRAM TIP29C XTR105 XTR105P XTR105PA XTR105U XTR105UA pt100 to 4-20 ma ic rtd pt100 4-20ma connections	PDF
rtd pt100 4-20ma wiring diagram Abstract: RTD SENSING CIRCUIT 4-20mA pt100/RTD PT100 signal conditioning circuit for pt100 4-20 mA LTC1047 PT100 IEC 751 RTD TRANSFER FUNCTION circuit diagram temperature measurement rtd pt100 temperature sensor circuit diagram XTR105 Contextual Info: XTR105 XTR 105 XTR 105 www.burr-brown.com/databook/XTR105.html 4-20mA CURRENT TRANSMITTER with Sensor Excitation and Linearization FEATURES APPLICATIONS ● LOW UNADJUSTED ERROR ● TWO PRECISION CURRENT SOURCES 800µA EACH ● INDUSTRIAL PROCESS CONTROL	Original	XTR105 com/databook/XTR105 4-20mA Pt100 30nAp-p 110dB 14-PIN SO-14 rtd pt100 4-20ma wiring diagram RTD SENSING CIRCUIT 4-20mA pt100/RTD PT100 signal conditioning circuit for pt100 4-20 mA LTC1047 PT100 IEC 751 RTD TRANSFER FUNCTION circuit diagram temperature measurement rtd pt100 temperature sensor circuit diagram XTR105	PDF
2n4416 transistor die Abstract: 2n4416 transistor all transistor databook 2N4416 2N4416A NJ26A Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-10 F-10 01/99 NJ26A Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts	Original	NJ26A 2N4416, 2N4416A 2n4416 transistor die 2n4416 transistor all transistor databook 2N4416 2N4416A	PDF
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-4 F-4 01/99 NJ14AL Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier ¥ Rf AMP to 1.0 Ghz G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts	Original	NJ14AL IF140, IF140A IF142	PDF
2N5911 Abstract: 2N5912 IFN5911 IFN5912 SMP5911 SMP5912 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-16 F-16 01/99 NJ30L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts	Original	NJ30L 2N5911, 2N5912 IFN5911, IFN5912 SMP5911 SMP5912 2N5911 2N5912 IFN5911 IFN5912 SMP5911 SMP5912	PDF

2n5485 equivalent transistor Abstract: J305 equivalent transistor OF TRANSISTOR 2N5485 2n4416 transistor die DATASHEET OF TRANSISTOR 2N5485 VCR11N 2N5485 j305 2N4416 2N4416A Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-8 F-8 01/99 NJ26 Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA	Original	NJ26A 2N4416, 2N4416A 2N5484, 2N5485 2N5486 VCR11N 2n5485 equivalent transistor J305 equivalent transistor OF TRANSISTOR 2N5485 2n4416 transistor die DATASHEET OF TRANSISTOR 2N5485 VCR11N 2N5485 j305 2N4416 2N4416A	PDF
NJ450L Abstract: IF4500 2N6550 IF4501 IFN860 2N6550 equivalent Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-38 F-38 01/99 NJ450L Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance G S-D Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj	Original	NJ450L 2N6550 IF4500 IF4501 IFN860 IF4500 2N6550 IF4501 IFN860 2N6550 equivalent	PDF
F42 equivalent Abstract: IF9030 NJ903L Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-42 F-42 01/99 NJ903L Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance G D-S S-D Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig	Original	NJ903L IF9030 F42 equivalent IF9030	PDF
transistor A3 F45 Abstract: transistor a4 f45 transistor A2 F45 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-44 F-44 01/99 NJ1800D Process Silicon Junction Field-Effect Transistor ¥ Ultra Low-Noise Pre-Amplifier D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts	Original	NJ1800D transistor A3 F45 transistor a4 f45 transistor A2 F45	PDF
NJ01 Abstract: ifn423 IFN421 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-2 F-2 01/99 NJ01 Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance G S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj	Original	2N4117, 2N4117A 2N4118, 2N4118A 2N4119, 2N4119A IFN421, IFN422 IFN423, IFN424 NJ01 ifn423 IFN421	PDF
F-46 Abstract: IF1801 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-46 F-46 01/99 NJ1800DL Process Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Low-Current Low Gate Leakage Current High Input Impedance Low-Noise D G Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig	Original	NJ1800DL IF1801 F-46 IF1801	PDF
F25 transistor Abstract: 2N6449 2N6450 equivalent 2N6450 IFN6449 IFN6450 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-24 F-24 01/99 NJ42 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ High Breakdown Voltage S Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts	Original	2N6449, 2N6450 IFN6449, IFN6450 F25 transistor 2N6449 2N6450 equivalent 2N6450 IFN6449 IFN6450	PDF
U311 Abstract: U310 U350 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-28 F-28 01/99 NJ72L Process Silicon Junction Field-Effect Transistor ¥ VHF/UHF Amplifier G Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts	Original	NJ72L U311 U310 U350	PDF
U430 Abstract: IFN5564 IFN5566 U309 VCR2N IFN5565 J308 J309 J310 U308 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-26 F-26 01/99 NJ72 Process Silicon Junction Field-Effect Transistor ¥ VHF/UHF Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C	Original	IFN5564, IFN5565 IFN5566 U430 IFN5564 IFN5566 U309 VCR2N IFN5565 J308 J309 J310 U308	PDF
NJ132L Abstract: 2sk152 equivalent transistor 2sk152 IFN152 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-34 F-34 01/99 NJ132L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C	Original	NJ132L 2N6451, 2N6452 2N6453, 2N6454 IF1320 IFN152 2SK152 2sk152 equivalent transistor 2sk152	PDF

ALL TRANSISTOR DATABOOK Search Results

ALL TRANSISTOR DATABOOK Result Highlights (5)

ALL TRANSISTOR DATABOOK Datasheets Context Search

circuit for using uc1725

92048

6 pin DIL And Gate

92048

4E smd diode

2N3823 equivalent

pt100/RTD PT100

RTD SENSING CIRCUIT 4-20mA

rtd pt100 4-20ma wiring diagram

2n4416 transistor die

2N5911

2n5485 equivalent transistor

NJ450L

F42 equivalent

transistor A3 F45

NJ01

F-46

F25 transistor

U311

U430

NJ132L