ALL SILICON COMPLEMENTARY TRANSISTORS DARLINGTON Search Results

1N5825

Abstract: MJ11021 MJ11021G MJ11022 MJ11022G MSD6100
Contextual Info: MJ11021 PNP MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types)

MJ11017 equivalent

Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types

MJH11021 equivalent

Abstract: BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)

2N6056

Abstract: ALL SILICON COMPLEMENTARY transistors darlington
Contextual Info: 2N6056 Darlington complementary silicon power transistor 8.63 Transistors Darlington T. Page 1 of 2 Enter Your Part # Home Part Number: 2N6056 Online Store 2N6056 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics

60N60

Abstract: 2N6300
Contextual Info: 2N6300 60 V darlington complementary NPN silicon power transistor 9.00 Transistors D. Page 1 of 2 Enter Your Part # Home Part Number: 2N6300 Online Store 2N6300 Diodes 60 Transistors V darlington complementary NPN silicon transistor Integrated Circuits Optoelectronics

Contextual Info: Central CZTA14 NPN CZTA64 PNP TM Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

2N6055

Contextual Info: 2N6055 Darlington complementary silicon power transistor 15.26 Transistors Darlington . Page 1 of 1 Enter Your Part # Home Part Number: 2N6055 Online Store 2N6055 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics

Contextual Info: Central CXTA14 NPN CXTA64 PNP TM Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA14, CXTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

Contextual Info: Central" CXTA14 NPN CXTA64 PNP Sem iconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA14, CXTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

r2407

Contextual Info: Central CZTA14 NPN CZTA64 PNP Sem iconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

sot23 marking C1N

Contextual Info: Central CMPTA13 CMPTA14 NPN CMPTA63 CMPTA64 PNP TM Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors manufactured by the epitaxial planar process,

ALL SILICON COMPLEMENTARY transistors darlington

Contextual Info: Central CZTA14 NPN CZTA64 PNP TM Sem i c o n d u c t o r C o r p . SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

Contextual Info: CZTA14 CZTA64 Central NPN PNP sem iconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

darlington complementary

Abstract: SILICON COMPLEMENTARY transistors darlington 743 ic COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS CZTA14 CZTA64
Contextual Info: C ZTA 14 C ZTA 64 Central NPN PNP Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

Contextual Info: Central CXTA14 NPN CXTA64 PNP TM Sem i c o n d u c t o r C o r p . SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA14, CXTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

SILICON COMPLEMENTARY transistors darlington

Abstract: darlington complementary CXTA14 CXTA64
Contextual Info: Central" CXTA14 NPN CXTA64 PNP Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA14, CXTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

Contextual Info: CMPTA13 CMPTA14 NPN CMPTA63 CM PTA64 PNP Central“ SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: Sem iconductor Corp. The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors manufactured by the epitaxial planar process,

Contextual Info: Central CM PTA13 CM PTA14 NPN CM PTA63 CM PTA64 PNP Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors manufactured by the epitaxial planar process,

MJ2501

Abstract: MJ3001 3030 typ dc motor
Contextual Info: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATION AUDIO POWER AMPLIFIER ■ DC-AC CONVERTER ■ EASY DRIVER FOR LOW VOLTAGE DC MOTOR ■ GENERAL POWER SWITCHING

Contextual Info: Central TM CMPTA13 CMPTA14 NPN CMPTA63 CMPTA64 PNP Sem i c o n d u c t o r C o r p . SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors

SILICON COMPLEMENTARY transistors darlington

Abstract: "Darlington Transistors" complementary darlington CMPTA13 CMPTA14 CMPTA63 CMPTA64 sot23 marking C1N
Contextual Info: C M P TA 13 C M P T A 14 NPN C M P T A 63 C M P T A 64 PNP Central SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: Sem iconductor Corp. The C EN TR AL S E M IC O N D U C TO R CMPTA13, CM PTA63 series types are complementary silicon Darlington transistors

Contextual Info: 2N6298 60 V darlington complementary PNP silicon power transistor 12.35 Transistors . Page 1 of 1 Enter Your Part # Home Part Number: 2N6298 Online Store 2N6298 Diodes 60 Transistors V darlington complementary PNP silicon transistor Integrated Circuits Optoelectronics

pin diagram of ic 4066

Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
Contextual Info: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.

2N6052

Abstract: 2N6059 2N6051 2N6058 npn darlington transistor 150 watts
Contextual Info: 2N6051/2N6052/2N6058/2N6059 Darlington Complementary Transistors Features: • Designed for general-purpose power amplifier and low frequency switching applications. • Monolithic construction with Built-in Base-Emitter Shunt Resistors. • High DC current gain-hFE = 750 typical at IC = 6.0A.