AKER Search Results

421 infra

Contextual Info: Ausgabe O I M •d M on O L M Dleee Auegebe w u rde m it dam Softwere8yetem Fram eM aker* eretellL Thle edition wea reellzed ualng the eoftw ere ayetem F rim e M e k e r*. Herauegegeben von Siem ens AQ, ■ereleh H i lb lt t t t r , M arke tingK o m m u n ika tio n , BalanetreSe 71,

Contextual Info: • bbSa'IBI 0DBS7TS S3fi « A P X N AKER PHILIPS/DISCRETE L.7E D _ _ PMBD 28 35 PMBD 28 36 J SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The PMBD2835 and 2836 consist of two diodes in a microminiature plastic envelope. The anodes are

Contextual Info: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

BGY22

Contextual Info: i , _ N AKER P H I L I P S / D I S C R E T E ObFl SFbbS3T31 0Di3534 T-74-09^01 BGY23 BGY23A _ / V U.H.F. POWER AMPLIFIER MODULES Broadband amplifier modules primarily designed for mobile applications operating directly from 12 V

BY705

Abstract: BY706 sod61 brown
Contextual Info: I I N AKER PHILIPS/DISCRETE b=JE D bbSBTBl OGHbSlfl GOT A IAPX B Y /U 5 B Y706 SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EH T re c tifie r diodes in glass envelopes Intended fo r use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because o f the small envelope, th e diodes should be

Contextual Info: SIEMENS Components for Entertainment Electronics 2 Band TV Tuner TUA 6012, TUA 6014 Mixer-Oscillator-PLL Datasheet 1998-09-01 Edition 1998-09-01 T his e d itio n w a s re a lize d using th e s o ftw a re s yste m Fram eM aker Published by Siemens AG, Bereich

LM 4741

Abstract: TL0820P 75902P 6458D 75458P 4558s 2902N 2904D 75902f 2058d
Contextual Info: General Purpose Linear ICs • Comparison Table of Op Amps. M aker Panasonic NEC C ategory Single power supply 11St' Quad AN1358 //P C 3 5 8 C AN6562 /¿PC 1251C AN1358S /¿PC358C. (AN6562S) f j } \ 125KÍ AN 1324 (AN 6564) Dual Audio //P C 3 2 4 C N IJM 324D

knowles speaker

Contextual Info: CB-23817-000 SHT I. I 25.40 [ I .00] MAXIMUM Revision DIMENSIONS IN M I L L I M E T E R S [INCHES] C.O. # Implementation Date RELEASE LEVEL MI 0 I0 I232 9-19-06 Released SCALE: KNOWLES ELECTRONICS ITASCA, ILLINOIS U.S.A. i . i DO NOT DR. BY SCALE SPE AKER

SD-49225-201

Abstract: microsd drawing 49225-0821 49225-0821 molex PK-49225-201 microsd specification 492250821 microsd connector push-push PK-49
Contextual Info: TOLERANCE : ± 0 .0 5 [Card Center-Line] J T B * Normal DIM. : Limited * DIM. : Recommend NOTES 1. 2. 3. 4. MATERIALS: SEE TABLE T h is connector h a s been tested for com paiWity with both T ra n sF la s h and microSD cards* how ever, a s this standard is in transition so m e specifications from dfferent card m akers m ay dffer.

0.18-um

Abstract: free ieee paper on vlsi
Contextual Info: Semiconductor, Published in IEDM Technical DigestFreescale 2003 session 34 paper #6 Inc. A 0.18µm 4Mb Toggling MRAM M. Durlam, D. Addie, J. Akerman, B. Butcher, P. Brown, J. Chan, M. DeHerrera, B.N. Engel, B. Feil, G. Grynkewich, J. Janesky, M. Johnson, K. Kyler, J. Molla, J. Martin, K. Nagel, J. Ren, N.D. Rizzo,

BZX70C

Abstract: philips zener diode c47- DIODE BZX70
Contextual Info: T N AKER PHILIPS/DISCRETE MAINTENANCE TYPE SSE D • ^ 53=131 0022671 0 B B Z X 7 0 S E R IE S 7-H-JST R E G U L A T O R D IO D E S A range o f diffused silicon diodes in plastic envelopes, intended for use as voltage regulator and transi­ ent suppressor diodes in medium power regulators and transient suppression circuits.

BFQ43

Abstract: transistor tt 2222 on 4312 BLW31 Metallized Polyester Film Capacitor MER BB313
Contextual Info: L ib s a 'm D02T30G flûT N AKER PHILIPS/DISCRETE V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in c!ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power

B23SL

Contextual Info: SIEMENS ICs for Communications Intelligent Network Termination Controller 2B1Q INTC-Q PEB 8191 Version 1.1 PEF 8191 Version 1.1 D a ta s h e e t 10.97 DS 1 Edition 10.97 T his e d ition w a s realized using the so ftw a re syste m Fram eM aker . Published by Siemens AG,

Contextual Info: SIEMENS ICs for Communications Four Channel Codec Filter with PCM- and ^-Controller Interface SICOFI 4-|xC PEB 2466 Version 1.2 Data Sheet 02.97 DS 2 Edition 02.97 This edition w as realized using the softw are system Fram eM aker . Published by Siemens AG,

pj 0159

Contextual Info: PhNip^temicon^ b b 5 3 T 31 0 □ 2 *4T b 7 SMfl Hi AP X AKER P HI L I P S / B I S CRE T E NPN 9 GHz wideband transistor FEATURES • High power gain ^ b7E BFG505; BFG505/X; BFG505/XR PINNING PIN 4 DESCRIPTION • Low noise figure • High transition frequency

Contextual Info: Edition 10.96 This edition was realized using the software system F ram eM aker’ . Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, BalanstraBe 73, 81541 Miinchen S ie m e n s AG 1996. All Rights Reserved. Attention please! As fa r as patents o r o ther rights o f third par­

Contextual Info: SRK383S S ta n d a rd Shaft: 51. 5 7 m m Typical A p p lica tio n : =£53 H a ir C lipper H!.W! B rush Type: f ä ifti C a rb o n W a te r Pump •Ä iS End Bell: B P S Plastic C ookie M aker I # * ! I£« f Operating Nomind Ronge Voltage V V RPM A RPM

Contextual Info: bbSB'Gl □D2^3DD flflT • APX N AKER PHILIPS/DISCRETE bH E BLW31 » V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage o f 13,5 V. Because of the high gain and excellent power

Contextual Info: • bbS3T31 Q025577 730 « A P X N AKER PHILIPS/DISCRETE BSR17A b7E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a microminiature plastic envelope intended for switching and linear applica­ tions in thick and thin-film circuits. QUICK REFERENCE DATA

transistor 3s4

Abstract: DD 127 D TRANSISTOR BUK542 BUK542-100A BUK542-100B
Contextual Info: N AKER PHILIPS/DISCRETE bTE D • bt.53^31 ODBDTHS 3S4 M A P X Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FET_ _ GENERAL DESCRIPTION PIN CO Q PINNING -SO T186

SMD SOT23 7E

Abstract: MARKING CODE SMD IC PMBTA13 PMBTA14
Contextual Info: • □ □25ûflcï U S ■ APX N AKER PHILIPS/DISCRETE PMBTA13 PMBTA14 b7E » N-P-N SM ALL-SIGNAL DARLINGTON TRANSISTORS N-P-N small-signal darlington transistors in a microminiature SMD envelope SOT-23 . Designed prim arily fo r preamplifier input applications requiring high input impedance.

Contextual Info: Interconnection Systems Selection Guide 8 2 7 5 0 Revised ^ § 5 C A B LE M AKER Battery Terminals Part Numbers Nominal Wire Size 6 Closed Flag Type UNIV 29253 — — UNIV 29251 NEG 6 0 8 8 17-2 — — 29250 — — Terminals and Splices CABLE M AKER Battery Terminals

tc58v32ft

Abstract: TC58V32
Contextual Info: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and

tc9800

Abstract: CP1128 TC9806 TC9802
Contextual Info: 4. D e v e l o p m e n t F lo w a n d D e v e l o p m e n t S u p p o r t T o o ls 4.1 D e v e lo p m e n t F lo w Figure 4-1 shows the normal PLD development flow. When system and logic designs are complete, the design data m ust be input to the PLD development software.