AI127 Search Results

NAND02GW3B2C

Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
Contextual Info: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

VFBGA63

Abstract: NAND02GW3B2C NAND01G-B2B NAND01GR3B2B NAND01GR4B2B NAND01GW3B2B NAND02G-B2C NAND01G cache program
Contextual Info: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 byte/1056 word page, 1.8 V/3 V, NAND Flash memory Features • High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width

M29W640

Abstract: 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT
Contextual Info: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

Wear Leveling in Single Level Cell NAND Flash Memory

Abstract: 4GIT NAND08Gx3C2A NAND04GW3C2A AI07563B bad block management in mlc
Contextual Info: NAND04Gx3C2A NAND08Gx3C2A 4 Gbit, 8 Gbit 2112 Byte Page, 3V, Multi-level NAND Flash Memory Preliminary Data Features summary • High density multi-level Cell MLC NAND Flash memories: – Up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solutions for mass storage

NAND02GW3B2C

Abstract: VFBGA63 NAND01GW3B2B VFBGA-63 block code error management, verilog NAND01GR3B2B NAND01Gr4B2B NAND02GR4B2C Numonyx NAND01G-B2B
Contextual Info: NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features • High density SLC NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read „ ACCESS TIMES: 70, 90ns „ PROGRAMMING TIME – 10 s per Byte/Word typical „ 35 MEMORY BLOCKS

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read „ ACCESS TIMES: 70, 90ns „ PROGRAMMING TIME – 10 s per Byte/Word typical „ 35 MEMORY BLOCKS

M65KA128AE

Contextual Info: M65KA128AE 128Mbit 4 Banks x 2M x 16 1.8 V Supply, Low Power SDRAM Features summary • 128Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2MWords, each 16 bits wide ■ Synchronous Burst Read and Write – Fixed Burst Lengths: 1, 2, 4, 8 Words or

NAND01G-B2B

Abstract: TSOP48 2 NAND01GW3B2B NAND02GW3B2C VFBGA63 NAND01GR3B2B NAND01GR4B2B NAND02G-B2C NAND01GR nand02
Contextual Info: NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory Features • High density NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width

Contextual Info: M65KA128AE 128 Mbit 4 Banks x 2 Mbit x 16 1.8 V Supply, Low Power SDRAM Features summary • 128 Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2 Mwords, each 16 bits wide ■ Synchronous Burst Read and Write – Fixed burst lengths: 1, 2, 4, 8 words or Full

M29W640GB

Abstract: M29W640GT M29W640GL
Contextual Info: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) FBGA TSOP48 (NA)

st m29w640gb

Abstract: M29W640GL Led matrix 8x8 M29W640GT 640g morocco M29W640GB M29W640GH TFBGA48 TSOP56 M29W640GT70
Contextual Info: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

275-3930

Abstract: raychem ED 7 AI127
Contextual Info: DASH ND -23 -24 _ "D/I A -27 -29 -30 -32 -33 -43 -45 -47 -49 ¡ -55 -57 -58 CABLES ACCDMMDDATED A MICRDDOT MIlRDDDT 9530A51Ì7, RAYCHEM 2 0 2 - 3 9 2 7 , MICR0DDT/5\ 7 3 - 1 3 1 7 9 1 1 - 1 , SYLVANIA TWC-124-1A TWC-78-1 8441, BELDEN ^ 761 A , W.E.CD. TRC-50-1

NAND04GW3C2A

Abstract: NAND04GA3C2A TSOP48 outline JESD97 Wear Leveling in Single Level Cell NAND Flash Memory
Contextual Info: NAND04GA3C2A NAND04GW3C2A 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory Features • High density multi-level Cell MLC NAND Flash memories: – Up to 128 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND interface

VFBGA63

Contextual Info: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 byte/1056 word page, 1.8 V/3 V, NAND Flash memory Features • High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width

Contextual Info: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features „ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Access times: 70, 90ns „ Programming time

3F8000H-3FFFFFH

Contextual Info: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature • Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) ■ Asynchronous random/page read

st m29w640gb

Contextual Info: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY n SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read n ACCESS TIMES: 70, 90ns n PROGRAMMING TIME – 10 s per Byte/Word typical n 35 MEMORY BLOCKS

M29W640GT

Abstract: TSOP56 M29W640 M29W640GL M29W640GB 220ch M29W640GH numonyx m29 TFBGA48 448h
Contextual Info: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) TSOP48 (NA) 12 x 20 mm

Intel Core 2 Duo E4400

Abstract: Intel Core 2 Duo E4300 AI101 AI114 AI-114 AI122 AI37 06F6h SLA95 e4700
Contextual Info: Intel Core 2 Extreme Processor X6800Δ and Intel® Core™2 Duo Desktop Processor E6000Δ and E4000Δ Sequence Specification Update — on 65 nm Process in the 775-land LGA Package supporting Intel® 64Φ Architecture, Intel® Virtualization Technology± and

M29W640GL

Abstract: M29W640GT st m29w640gb 640g morocco M29W640GB M29W640GH TFBGA48 TSOP56
Contextual Info: M29W640GH M29W640GL M29W640GT M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature • Supply Voltage – VCC = 2.7 to 3.6 V for Program/Erase/Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 words

M65KA128AE

Contextual Info: M65KA128AE 128 Mbit 4 Banks x 2 Mbit x 16 1.8 V Supply, Low Power SDRAM Features summary • 128 Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2 Mwords, each 16 bits wide ■ Synchronous Burst Read and Write – Fixed burst lengths: 1, 2, 4, 8 words or Full

BCR10

Abstract: M69KM048AA BCR8
Contextual Info: M69KM048AA 32 Mbit 2 Mb x16 , 83MHz Clock Rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ Multiplexed Address/Data bus