|
Contextual Info: M29W102BT M29W102BB 1 Mbit 64Kb x16, Boot Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 50ns ■ PROGRAMMING TIME – 10µs per Word typical ■ 5 MEMORY BLOCKS
|
Original
|
m29w102btm29w102bbtsop40 |
PDF
|
M28F102
Abstract: M29W102B M29W102BB M29W102BT
Contextual Info: M29W102BT M29W102BB 1 Mbit 64Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 50ns ■ PROGRAMMING TIME – 10µs per Word typical ■
|
Original
|
m29w102btm29w102bbtsop40m28f102+1m29w102b
|
PDF
|
M28F102
Abstract: M29W102B M29W102BB M29W102BT
Contextual Info: M29W102BT M29W102BB 1 Mbit 64Kb x16, Boot Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 50ns ■ PROGRAMMING TIME – 10µs per Word typical ■ 5 MEMORY BLOCKS
|
Original
|
m29w102btm29w102bbtsop40m28f102+1m29w102b
|
PDF
|
M28F102
Abstract: M29W102B M29W102BB M29W102BT
Contextual Info: M29W102BT M29W102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 45ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word
|
Original
|
m29w102btm29w102bbm28f102m29w102b |
PDF
|
M28F102
Abstract: M29W102B M29W102BB M29W102BT
Contextual Info: M29W102BT M29W102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 45ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word
|
Original
|
m29w102btm29w102bbm28f102tsop40+4a0-a15dq8-dq15ai02786m29w102b
|
PDF
|
M28F102
Abstract: M29W102B M29W102BB M29W102BT
Contextual Info: M29W102BT M29W102BB 1 Mbit 64Kb x16, Boot Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 50ns ■ PROGRAMMING TIME – 10µs per Word typical ■ 5 MEMORY BLOCKS
|
Original
|
m29w102btm29w102bbtsop40m28f102+1m29w102b
|
PDF
|