M28F256
Abstract: PDIP32 PLCC32
Contextual Info: M28F256 256 Kbit 32Kb x8, Bulk Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical
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m28f256120ns150ns200ns+3ai00689pdip32plcc32
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1N914
Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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m28f256plcc32pdip321n914+1memory write protect m28f512
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1N914
Abstract: M28F256 PDIP32 PLCC32 BP-DIP32
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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m28f256plcc32pdip321n914+1bp-dip32
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1N914
Abstract: M28F256 PDIP32 PLCC32
Contextual Info: M28F256 256 Kbit 32Kb x8, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE IN 1s RANGE LOW POWER CONSUMPTION – Standby Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES
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Contextual Info: /S T S G S -T H O M S O N * 7 # . HO @l EILi(gTO®R!lö(gi M28F256 256K (32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: lOOpA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10>is
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m28f256plcc32 |
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FZJ 125
Abstract: 1N914 M28F256 PDIP32 PLCC32
Contextual Info: n q o -2 o £ y j S G S -T H O M S O N OrgEißJlEILliriulfiSL-ligi M28F256 256K (32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 100)iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE
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m28f256100jxafzj 1251n914+2pdip32plcc32
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Contextual Info: M28F256 256 Kbit 32Kb x8, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10|is typical ELECTRICAL CHIP ERASE IN 1s RANGE LOW POWER CONSUMPTION
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Contextual Info: S G S -1 H 0 M S 0 N M28F256 IfflD Ig ^ O IIL iC T lS ìO lfflD Ig i 256K 32K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 200pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE
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m28f256200papdip32plcc32 |
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ah rzj
Abstract: 1N914 M28F256 Scans-005192 A0-A14
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns • LOW POWER CONSUMPTION - Standby Current: 100pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10us (PRESTO F ALGORITHM) ■ ELECTRICAL CHIP ERASE IN 1s RANGE
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m28f256100pasu18/20plcc32+4ah rzj1n914scans-005192a0-a14
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1N914
Abstract: M28F256 PDIP32 PLCC32
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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m28f256plcc32pdip321n914 |
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M28F256
Abstract: PDIP32 PLCC32 1N914
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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m28f256plcc32pdip321n914 |
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Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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m28f256pdip32plcc32100ns+3120ns150ns200ns
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1N914
Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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m28f256plcc32pdip321n914+1memory write protect m28f512
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M28F256
Abstract: PDIP32 PLCC32
Contextual Info: M28F256 256K 32K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max
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m28f256plcc32pdip32120ns+3150ns200nsai00689
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