M28F201
Abstract: PLCC32 TSOP32
Contextual Info: M28F201 2 Mbit 256Kb x8, Bulk Erase Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 5µA typical
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M28F201
Abstract: TSOP32 Package PLCC32 TSOP32
Contextual Info: M28F201 REVISION HISTORY - cont’d Date Description Stand-by Current from 10uA typ. to 5uA typ. November ’97 AC Test Circuit and Waveforms - modified PLCC mechanical data and diagram - modified TSOP mechanical data - modified August ’98 New ST Logo and Disclaimer - added
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m28f201256kbplcc32tsop32+3ai00639cai00640dtsop32 package
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plcc32 pinout
Abstract: M28F201 PDIP32 PLCC32 TSOP32
Contextual Info: M28F201 M28V201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW FAST ACCESS TIMES – 60ns for M28F201 version – 150ns for M28V201 version LOW POWER CONSUMPTION – Standby Current: 100µA Max 32 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE
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m28f201m28v201150nsplcc32+3pdip32tsop32plcc32 pinout
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M28F201
Abstract: PDIP32 TSOP32
Contextual Info: M28F201 M28V201 SGS-THOMSON G l R fflQ [E Ì [ÌL I £ M © 5 ìfl3 © Ì> 2 Megabit (256K x 8, Chip Erase FLASH M EM ORY PRODUCT PREVIEW FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version LOW POWER CONSUMPTION - Standby Current: 10OnA Max
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Contextual Info: $ 7 . M28F201 M28V201 SGS-THOMSON B !ü lD lS [ilL li© ir® S lü O !l® l 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW • FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version ■ LOW POWER CONSUMPTION - Standby Current: 100nA Max
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Contextual Info: S G S -T H O M S O N D iILi 'irM D EÌ M28F201 2 Mb (256K x 8, Bulk Erase FLASH MEMORY • > ■ ■ > ■ ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10|is typical ELECTRICAL CHIP ERASE in 1s RANGE
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1N914
Abstract: M28F201 PLCC32 TSOP32
Contextual Info: M28F201 2 Mb 256K x 8, Chip Erase FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 10µA typical
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M28F201
Abstract: PLCC32 TSOP32
Contextual Info: M28F201 2 Mb 256K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical
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Contextual Info: SGS-THOMSON D iILi 'irM D EÌ M28F201 2 Mb (256K x 8, Chip Erase FLASH MEMORY • ■ ■ > > > ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE in 1s RANGE
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m28f20115matypical10jaaplcc32+1tsop32
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plcc32 pinout
Abstract: M28F201 PLCC32 TSOP32
Contextual Info: M28F201 2 Mb 256K x 8, Chip Erase FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 10µA typical
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M28F201
Abstract: PLCC32 TSOP32
Contextual Info: M28F201 2 Mbit 256Kb x8, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 5µA typical
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m28f201256kbplcc32tsop32 |
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