AI00639C Search Results

Contextual Info: 5 7 . S G S -1 H 0 M S 0 N M28F201 M g [ M l[ L I( ^ [ il( g § 2 Megabit (256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10pATyp. ■ 10,000 PROGRAM/ERASE CYCLES

Contextual Info: SGS-THOMSON IIIIMJì ILIì M W IIÈÌ M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10|jA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE

M28F201

Abstract: PLCC32 TSOP32
Contextual Info: M28F201 2 Mbit 256Kb x8, Bulk Erase Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 5µA typical

1N914

Abstract: M28F201 PLCC32 TSOP32
Contextual Info: M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE 5V ± 10% SUPPLY VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs

M28F201

Abstract: TSOP32 Package PLCC32 TSOP32
Contextual Info: M28F201 REVISION HISTORY - cont’d Date Description Stand-by Current from 10uA typ. to 5uA typ. November ’97 AC Test Circuit and Waveforms - modified PLCC mechanical data and diagram - modified TSOP mechanical data - modified August ’98 New ST Logo and Disclaimer - added

plcc32 pinout

Abstract: M28F201 PDIP32 PLCC32 TSOP32
Contextual Info: M28F201 M28V201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW FAST ACCESS TIMES – 60ns for M28F201 version – 150ns for M28V201 version LOW POWER CONSUMPTION – Standby Current: 100µA Max 32 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE

M28F201

Abstract: PDIP32 TSOP32
Contextual Info: M28F201 M28V201 SGS-THOMSON G l R fflQ [E Ì [ÌL I £ M © 5 ìfl3 © Ì> 2 Megabit (256K x 8, Chip Erase FLASH M EM ORY PRODUCT PREVIEW FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version LOW POWER CONSUMPTION - Standby Current: 10OnA Max

M28F201

Contextual Info: M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE 5V ± 10% SUPPLY VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs

Contextual Info: $ 7 . M28F201 M28V201 SGS-THOMSON B !ü lD lS [ilL li© ir® S lü O !l® l 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW • FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version ■ LOW POWER CONSUMPTION - Standby Current: 100nA Max

Contextual Info: S G S -T H O M S O N D iILi 'irM D EÌ M28F201 2 Mb (256K x 8, Bulk Erase FLASH MEMORY • > ■ ■ > ■ ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10|is typical ELECTRICAL CHIP ERASE in 1s RANGE

1N914

Abstract: M28F201 PLCC32 TSOP32
Contextual Info: M28F201 2 Mb 256K x 8, Chip Erase FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 10µA typical

M28F201

Contextual Info: M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE 5V ± 10% SUPPLY VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs

M28F201

Abstract: PLCC32 TSOP32
Contextual Info: M28F201 2 Mb 256K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical

Contextual Info: SGS-THOMSON D iILi 'irM D EÌ M28F201 2 Mb (256K x 8, Chip Erase FLASH MEMORY • ■ ■ > > > ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE in 1s RANGE

M28F201

Abstract: PLCC32 TSOP32
Contextual Info: M28F201 2 Mbit 256Kb x8, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 5µA typical

1N914

Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE

A12C

Abstract: M28F201 TSOP32 Scans-005192
Contextual Info: SGS-THOMSON M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10(xATyp. ■ 10,000 PROGRAM/ERASE CYCLES ■ 12V PROGRAMMING VOLTAGE ■ 5V ± 10% SUPPLY VOLTAGE