AI 723 Search Results

common rail pressure sensor bosch

Abstract: BOSCH 0 206 001 010 IBS ai 5118A bosch pressure sensor common rail Bosch Common Rail Sensor bosch 0 205 001 40 Klockner-Moeller GmbH AI 186 N DISTANCE MEASUREMENT
Contextual Info: IBS AI – AI3 – AI / I – AI3 / I INTERBUS-S Data Sheet Analog Input Modules with 4 Channels Data Sheet Revision A 12/1995 Product Description The IBS AI, AI3, AI/I and AI3/I analog input modules acquire current and voltage signals on each of the 4 channels.

ZN 3055 transistor

Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
Contextual Info: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K

271-14.eps

Abstract: TS271
Contextual Info: SGS-THOMSON ¡y TS271C/I/M PROGRAMMABLE SINGLE CMOS OPERATIONAL AMPLIFIERS N DIPS Plastic Package D S08 (Plastic Micropackage) ORDER CODES Part Number Temperature Range Pac tage N D TS271C/AC/BC TS271 l/AI/BI 0°C, +70°C -40°C, +105°C • • • TS271M/AM/BM

HARRIS IRFD110

Abstract: IRF510
Contextual Info: H AR RIS SEIUCOND SECTOR bflE D • 430EB71 O D S lD ib ■ HAS PCF110W HARRIS a 41b SEMICONDUCTOR P January1993 ^ j F 1 1 O D N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-Ti-NI

Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Small diameter Wide resistance range Good resolution Linear tapers Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control Initial Electrical Characteristics1 Standard Resistance ohms to 1 megohm

Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • ■ ■ ■ ■ Small diameter Wide resistance range Good resolution Linear tapers Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control Initial Electrical Characteristics1 Standard Resistance ohms to 1 megohm

NT101

Abstract: bourns potentiometer 321
Contextual Info: *R oH VE S CO AV R M AI SIO PL LA N IA BL S NT E Features • Small diameter Non-RoHS versions are available, but not recommended for new designs. ■ Wide resistance range ■ Good resolution ■ Linear tapers ■ Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control

h20 mosfet

Contextual Info: HARRI S SENI COND SECTOR bôE D • 4302271 0DS111E HAFRFRIS 4TT ■ HAS PCF210W F2 1OD S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-NI

transistor N43

Abstract: harris 34
Contextual Info: HARRIS SENICOND SECTOR g ì H W bôE D • 4302271 OGSlllfl ÌO? ■ HAS PCF420W a r r is F4SP SE MI C ON D UC T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization • Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni

475 50K 030

Contextual Info: *R oH VE S CO AV R M AI SIO PL LA N IA BL S NT E Features • Small diameter ■ Wide resistance range ■ Good resolution ■ Linear tapers ■ Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control Initial Electrical Characteristics1 Standard Resistance Range .100 ohms to 1 megohm

Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Small diameter Wide resistance range Good resolution Linear tapers Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control Initial Electrical Characteristics1 Standard Resistance ohms to 1 megohm

Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Small diameter Wide resistance range Good resolution Linear tapers Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control Initial Electrical Characteristics1 Standard Resistance ohms to 1 megohm

Contextual Info: *R oH VE S CO AV R M AI SIO PL LA N IA BL S NT E Features • Small diameter ■ Wide resistance range ■ Good resolution ■ Linear tapers ■ Cermet element 3862 - 1/2 ” Diameter Single-Turn Panel Control Initial Electrical Characteristics1 Standard Resistance Range .100 ohms to 1 megohm

Contextual Info: Tas droits stricter««* m e re *. Reproduction ou communication a des Sen M tn fle sous quelque forme que ce so* sane autorisation écrits du propietain. Propriété d e 8ERG QÜTOOM CS. Droits de reproduction BERG ELECTRONICS NC . AI right» «*ric% reserved. Reproduction or issue to third porta

IRF9530 Harris

Contextual Info: HARRIS £ * H A SEmCOND R R SECTOR 430 2 27 1 o a s i i a a 54T bflE D PCF12P10W PCF12P10D I S SEMI C ON DU C T O R P-Channel MOS Chip January 1993 Die Features • HAS Passivated • Contact Metallization - Gate and Source - Aluminum - Drain-Tri-Metal AI-TI-Ni)

R433T

Abstract: r2332 R3110P R1117 R3324 R133L R742 R5115 R4110A R4337
Contextual Info: ,JIANN MA ELECTRONICS CO LED LAMP 54E D 4*175305 ODODODS D • RECTANGULAR TYPE LENS COLOR RECTANGULAR TYPE 5x5m/m 5x5m/m ai <*8 5^5m/m a»a^-Ñl h L Í6 -9 7 - ia 3 25x5m/m 25x5m/m 25x5m/m JJL IE 2x5m/m “Ä 3 Color Diffused TYP 1 Color Transparent fTYP 2)

RFD8P05SM

Contextual Info: HARRIS SEHICOND SECTOR bfiE D • 4302E71 00510^5 070 ■ PCF8P05W P^^FSPOSD HARRIS S E M I C O N D U C T O R P-Channel MOS Chip January 1993 Features • HAS Die Passivated • Contact Metallization - Gate and Source - Aluminum Silicon • Drain • Tri-Metal AI-Ti-NI

Contextual Info: HARRIS SEflICOND SECTOR bflE D • 430B271 Q0S10A5 T21 ■ £15 H A R R IS W PCFC40W 4QIP S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features • HAS Die Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni

PA710

Contextual Info: PA710 Series 5-200 MHz. Cascadable Amplifier -PHO£W< M /C /?O m i/£ Corp. Typical Performance Curves -B-55°C +25°C - A - +85°C G ai n vs. F r e q u e n c y See Short Form Chart and Mechanical Section for available outline drawings. N F v s . F requency

Contextual Info: «•/et a» Mt-i ma •o[f. “8 \ ss 0" 0*0 . ï s is 58 - «g H ÿï ♦ï » ël II 00 CUPS! 000 0 0 0 S JESLJmA oior 0 1 1 1 ® 000 0® ® 00 ® 000 000 000 T T PROCHJCT NO D E S C R IP T IO N SEE TABLE -DIM AI .010/723 a scalci i^isilmiaj.LQi.LDLiaj.inJ.ieiiaj.teilsi.Lai.isL^

PSNK

Abstract: CK3300
Contextual Info: DATA COM MUNICATIONS A Nl I<AI l\ S I R I A U M CK3300 4 Digit Clock Radio Circuit FEATURES • ■ ■ ■ • ■ ■ • ■ ■ ■ ■ 4 D igits plus colons LED d ire ct duplex drive No display-IC interface com ponents No radio fre q u en cy interference problem s

RFL10N15

Abstract: 330 e57
Contextual Info: H A RR IS S E N I C O N D SECT OR bflE D • 430 E57 1 G D S 1 QT 4 t,43 ■ HARRIS HAS P C F 10N 15W P^jF1 0N15D SEMICONDUCTOR January 1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal AI-TI-Ni

NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

63000-000

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device