AGR19K180U Search Results

AGR19K180U Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TH 2190 HOT Transistor Contextual Info: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21180EF TH 2190 HOT Transistor	PDF
Contextual Info: Preliminary Product Brief September 2003 AGR19K180E 180 W, 1.840 GHz—1.870 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR19K180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS	Original	AGR19K180E IS-95B AGR19K180EU AGR19K180EF PB03-199RFPP	PDF
AGR09180EF Abstract: JESD22-C101A Contextual Info: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180EF Hz--895 AGR09180EF DS04-123RFPP DS04-031RFPP) JESD22-C101A	PDF
TH 2190 HOT Transistor Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21 Contextual Info: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	AGR21180EF AGR21180EF AGR19K180U AGR21180XF 12-digit TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A GHZ-21	PDF
TH 2190 HOT Transistor Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A Contextual Info: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21180EF AGR21180EF DS04-167RFPP DS04-124RFPP) TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A	PDF
A114B Abstract: AGERE AGR26180E AGR26180EF AGR26180EU AGR26180XF AGR26180XU JESD22-C101A Contextual Info: Preliminary Product Brief April 2004 AGR26180E 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26180E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	AGR26180E AGR26180E AGR26180EU AGR26180EF PB04-082RFPP PB04-017RFPP) A114B AGERE AGR26180EF AGR26180EU AGR26180XF AGR26180XU JESD22-C101A	PDF
J307 FET Abstract: AGR19180EF JESD22-A114 agere c8 Contextual Info: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19180EF Hz--1990 AGR19180EF DS04-080RFPP DS02-377RFPP) J307 FET JESD22-A114 agere c8	PDF
AGR09180EF Abstract: JESD22-C101A transistor z14 L Contextual Info: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global	Original	AGR09180EF Hz--895 AGR09180EF suit-20 AGR19K180U JESD22-C101A transistor z14 L	PDF
mosfet ghz Abstract: PB04-014RFPP Contextual Info: Preliminary Product Brief March 2004 AGR19K180E 180 W, 1.840 GHz—1.870 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR19K180EF is a high-voltage, gold-metalized, laterally diffused me tal oxide semiconductor LDMOS RF power transistor suitable for Korean PCS	Original	AGR19K180E AGR19K180EF IS-95B PB04-068RFPP PB04-014RFPP) mosfet ghz PB04-014RFPP	PDF
j792 Abstract: TH 2190 HOT Transistor Contextual Info: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21180EF DS04-124RFPP DS02-275RFPP) j792 TH 2190 HOT Transistor	PDF
AGR26180EF Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent Contextual Info: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	AGR26180EF AGR26180EF DS04-112RFPP J500 JESD22-C101A j78 transistor j78 transistor equivalent	PDF
C40 Sprague Abstract: C201A Z25 transistor UT-141A AGR09180E AGR09180EF AGR09180EU JESD22-C101A Contextual Info: Preliminary Data Sheet November 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180E Hz--895 AGR09180E DS04-031RFPP DS02-342RFPP) C40 Sprague C201A Z25 transistor UT-141A AGR09180EF AGR09180EU JESD22-C101A	PDF
AGR19K180E Abstract: AGR19K180EF JESD22-C101A JESD22-C101-A Contextual Info: Preliminary Product Brief April 2004 AGR19K180E 180 W, 1.840 GHz—1.870 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR19K180EF is a high-voltage, gold-metalized, laterally diffused me tal oxide semiconductor LDMOS RF power transistor suitable for Korean PCS	Original	AGR19K180E AGR19K180EF IS-95B AGR19K180EF PB04-079RFPP PB04-068RFPP) AGR19K180E JESD22-C101A JESD22-C101-A	PDF
Contextual Info: Preliminary Product Brief December 2003 AGR26180E 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26180E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide	Original	AGR26180E AGR26180EU AGR26180EF AGR26180EUg PB04-017RFPP	PDF

z24 mosfet Contextual Info: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global	Original	AGR09180EF Hz--895 DS04-123RFPP DS04-031RFPP) z24 mosfet	PDF
TH 2190 HOT Transistor Contextual Info: Preliminary Data Sheet November 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21180E AGR21180EU AGR21180EF DS02-275RFPP TH 2190 HOT Transistor	PDF
c5047 Contextual Info: Preliminary Data Sheet October 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180E Hz--895 DS02-342RFPP c5047	PDF
J307 FET Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386 Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19180EF Hz--1990 AGR19180EF DS04-162RFPP DS04-080RFPP) J307 FET JESD22-A114 c38 transistor j526 j451 J386	PDF
c5047 Abstract: JESD22-C101A AGR09180EF 100B3R9BW 100B4R7 100B4R7BW Contextual Info: Preliminary Data Sheet April 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180EF Hz--895 AGR09180EF DS04-155RFPP DS04-123RFPP) c5047 JESD22-C101A 100B3R9BW 100B4R7 100B4R7BW	PDF
mmds Abstract: AGR26180EF J500 JESD22-C101A Contextual Info: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	AGR26180EF AGR26180EF AGR19K180U AGR26180XF 12-digit mmds J500 JESD22-C101A	PDF

AGR19K180U Search Results

AGR19K180U Datasheets Context Search

TH 2190 HOT Transistor

AGR09180EF

TH 2190 HOT Transistor

TH 2190 HOT Transistor

A114B

J307 FET

AGR09180EF

mosfet ghz

j792

AGR26180EF

C40 Sprague

AGR19K180E

z24 mosfet

TH 2190 HOT Transistor

c5047

J307 FET

c5047

mmds