Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    AGR18045EF Search Results

    AGR18045EF Datasheets (2)

    Agere Systems
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    AGR18045EF
    		Agere Systems Transistor Mosfet N-CH 65V 3FLANGED PACKAGE Original PDF 206.64KB 10
    AGR18045EF-DB
    		Agere Systems MOSFET Original PDF 948.69KB 6

    AGR18045EF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Z9 TRANSISTOR SMD

    Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
    Contextual Info: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		agr18045eds03-186rfppz9 transistor smdjesd22-c101a+4agere c8 c1transistor smd z9grm216r71htransistor smd z8 PDF

    transistor smd z9

    Abstract: transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 AGR18045E JESD22-C101A CRCW12064R75F100 vishay 1206
    Contextual Info: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		agr18045etransistor smd z9transistor smd z8z9 transistor smd+6600f8r2ct250j374smd transistor z6jesd22-c101acrcw12064r75f100vishay 1206 PDF

    transistor smd z9

    Abstract: Z9 TRANSISTOR SMD transistor smd z8 smd transistor Z10 WECO Electrical Connectors weco AGR18045E JESD22-C101A 600F8R2CT250
    Contextual Info: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		agr18045eagr18045efagr18045euagr21045f+8transistor smd z9z9 transistor smdtransistor smd z8smd transistor z10weco electrical connectorswecojesd22-c101a600f8r2ct250 PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Contextual Info: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		ca03-005rfpp-7ca03-005rfpp-6agra10emapp550+8app550tmagr09085efapp550tm and app530tm400-khzagra 30taad08ju2agr09030efagr09030gum PDF