AG12K Search Results

a6k block diagram computer

Abstract: sis964L asus C4897 Solder Balls sis 756 AC498 VSSP73 2521a C286-2 sis 756
Contextual Info: 5 4 3 2 1 FILE LIST FAN A6K BLOCK DIAGRAM D THERMAL +3.3VS +5VS AMD K8 VRAM 8Mx32x2 CLOCK GEN TV OUT +3.3VS C 15 19 Nvidia NV44M RGB CRT 41 EAR 03 42 43 44 AC'97 CODEC AUDIO AMP 04 05 +2.5V +2.6V 45 PCI-E 1x16 Screw Hole 40 46 SIS 756 +3.3VS, +2.5VS, +1.8VS,+1.8P_VS,

MA2J11100

Abstract: FBJ3216HS800 8C547 MA2J11100L si4814 LAD2 12V P11A13 quanta foxconn quanta computer
Contextual Info: 5 4 3 2 1 Block Diagram 2004/1/28 DDR DIMM 333/400MHZ AMD Processor K8 D DTR/Transportable DDR DIMM PAGE 04. PAGE 02.03. Vcore (1.5V):52.9A VLDT :500mA VCC2.5V :0.15A VCC2.5V_DUAL:2.2A VTT1.25V :125mA D 12VOUT 5VPCU 3V_591 DC - DC PAGE 16. 2.5VSUS DDR_VTT

sis964L

Abstract: ASUS D2556 RN69E J2 Q24A B 78L05 C535 B KBC-M38857 74LV74 smd diode a6u
Contextual Info: 5 4 3 2 1 FILE LIST FAN A6K BLOCK DIAGRAM D THERMAL +3.3VS +5VS AMD K8 VRAM 8Mx32x2 CLOCK GEN TV OUT +3.3VS C 15 19 Nvidia NV44M RGB CRT 41 EAR 03 42 43 44 AC'97 CODEC AUDIO AMP 04 05 +2.5V +2.6V 45 PCI-E 1x16 Screw Hole 40 46 SIS 756 +3.3VS, +2.5VS, +1.8VS,+1.8P_VS,

AG12B

Abstract: AG12K AG12M AG12A AG12D AG12G AG12J
Contextual Info: AG12A . AG12M AG12A . AG12M Silicon Rectifier Cells with Polysiloxane Cover Silizium-Gleichrichterzellen mit Polysiloxan-Abdeckung Version 2007-07-26 Ø 6.8 Nominal current Nennstrom 12 A Repetitive peak reverse voltage Periodische Spitzensperrspannung

2N5666U3

Abstract: 2N5666 2N5665 JANTXV 2N5667 equivalent 2N5664 2N5666S 2N5667 2N5667S JANTXV 2N5666
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 October 2001. INCH-POUND MIL-PRF-19500/455D 31 July 2001 SUPERSEDING MIL-PRF-19500/455C 25 January 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING,

2N3419

Abstract: 2N3421 2N3421S 2N3418 2N3418S 2N3419S 2N3420 2N3420S JANTXV 2N3421 equivalent
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 August 2001. MIL-PRF-19500/393D 25 May 2001 SUPERSEDING MIL-PRF-19500/393C 20 April 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER

DSA001920

Contextual Info: AG12A . AG12M AG12A . AG12M Silicon Rectifier Cells with Polysiloxane Cover Silizium-Gleichrichterzellen mit Polysiloxan-Abdeckung Version 2012-02-06 Ø 6.4-0.2 Nominal current Nennstrom 12 A Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: AG12A . AG12M AG12A . AG12M Silicon Rectifier Cells with Polysiloxan Cover Silizium-Gleichrichterzellen mit Polysiloxan-Abdeckung Version 2006-04-26 Nominal current Nennstrom 12 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50.1000 V

AG12A

Abstract: 12A60
Contextual Info: AG12A . AG12M AG12A . AG12M Silicon Rectifier Cells with Polysiloxane Cover Silizium-Gleichrichterzellen mit Polysiloxan-Abdeckung Version 2012-02-22 Ø 6.4-0.3 Nominal current Nennstrom 12 A Repetitive peak reverse voltage Periodische Spitzensperrspannung

TRANSISTOR SMD MARKING CODE 451

Abstract: 2N6193 2N5339
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 June 2002. INCH-POUND MIL-PRF-19500/560E 6 March 2002 SUPERSEDING MIL-PRF-19500/560D 3 January 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING

smd diode a6u

Abstract: SIS M760GX M760GX RN75E sis964L rn73e asus tl494 "SiS964L" Q33B
Contextual Info: 5 4 3 2 1 FILE LIST THERMAL A6U BLOCK DIAGRAM D +3.3VS 08 13 DDR TERMINATION 07 +1.25V 06 +2.5V +2.6V AMD K8 FAN DUAL DDR SODIMM DDR +VCORE,+2.5V(+2.6V), +1.25V, +2.5VS, +1.2VS +5VS 03 36 04 05 Hyper Transport 16 x 16 CLOCK GEN LVDS LCD 14 302LV +3.3VS SIS M760GX

M81500

Abstract: AG3G DD1800 AG3B by12 AG3M DD1200 DD1400 DD1600 DD300
Contextual Info: Package 6.3 16 2 21 65±0.5 6.3±0.1 Type Ø 3±0.05 62.5±0.5 ±0.05 Ø 1.2 Si-A 3000/1350-2.5 23 ±0.05 Ø 0.8 36 -0.1 5.1 Type ±0.5 62.5 12±0.5 24+3 55 Voltage VRRM [V] 24+3 6.5±0.5 27 27 Voltage VRRM [V] M8 HV1.5 0.5A 1500 1500 1500 2000 HV2 (0.5A)

2n5665

Abstract: JANTXV 2N5666 2N5664 2N5666 JANTX 2N5666 2N5666U3 2N5666S 2N5667 2N5667S 455h
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 July 2008. MIL-PRF-19500/455H 22 April 2008 SUPERSEDING MIL-PRF-19500/455G 9 March 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING,

Stancor C-2691

Abstract: 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S MIL-STD-750 METHOD 1022
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 October 2002. INCH-POUND MIL-PRF-19500/394G 5 July 2002 SUPERSEDING MIL-PRF-19500/394F 23 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING