AG SMD TRANSISTOR Search Results

BCX70G

Abstract: BCX70H BCX70J BCX70K SMD AJ aj smd npn
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ

shear force 0603

Abstract: thermistor ptc smd 0805
Contextual Info: PTC thermistors as limit temperature sensors SMD, EIA case sizes 0402, 0603 and 0805 with ±3 °C and ±5 °C tolerance Series/Type: Date: October 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the

Contextual Info: PTC thermistors as limit temperature sensors SMD, EIA case sizes 0402, 0603 and 0805 with ±3 °C and ±5 °C tolerance Series/Type: Date: January 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the

shear force 0603

Contextual Info: PTC thermistors as limit temperature sensors SMD, EIA case sizes 0402, 0603 and 0805 with ±3 °C and ±5 °C tolerance Series/Type: Date: February 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the

B59601A0075A062

Abstract: A601 B59601 B59601A0085A062 B59601A0095A062 B59601A0105A062 B59601A0115A062 B59601A0125A062 B59601A0135A062 PTC Epcos B59601
Contextual Info: PTC thermistors Limit temperature sensors, SMD, EIA size 0603, ±5 °C tolerance Series/Type: B59601 Date: July 2006  EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

ptc a601

Abstract: A601 B59601 B59601A0075B062 B59601A0085B062 B59601A0095B062 B59601A0105B062 B59601A0115B062 B59601A0125B062 B59601A0135B062
Contextual Info: PTC thermistors Limit temperature sensors, SMD, EIA size 0603, ±3 °C tolerance Series/Type: B59601 Date: July 2006  EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

7 flus 56

Abstract: flus 56 PTC Epcos B59601
Contextual Info: PTC thermistors Limit temperature sensors, SMD, EIA size 0603, ±3 °C tolerance Series/Type: Date: B59601 November 2005 EPCOS AG 2005. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

3N06L06

Abstract: C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06
Contextual Info: Target data sheet IPI80N06S3L-06 IPP80N06S3L-06,IPB80N06S3L-06 OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 5.6 mΩ ID 80 A P- TO262 -3-1

3P03L04

Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V

4N04L04

Abstract: DIODE smd marking Ag IPI80N04S4L-04 IPP80N04S4L-04 PG-TO262-3-1 m9120 IPB80N04S4L-04 4N04 SMD DIODE 681
Contextual Info: IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 4.0 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow

ANPS071E

Abstract: IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03
Contextual Info: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • MSL1 up to 260°C peak reflow

3N0625

Abstract: INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon
Contextual Info: Target data sheet OptiMOS -T Power-Transistor Product Summary VDS Feature • n-Channel 55 RDS on max. SMD version • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) IPI25N06S3-25 IPP25N06S3-25,IPB25N06S3-25 P- TO262 -3-1 V 24.9

3N0607

Abstract: ANPS071E IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code
Contextual Info: Target data sheet OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • AEC Q101 qualified • Low On-Resistance RDS on IPI80N06S3-07 IPP80N06S3-07,IPB80N06S3-07 Product Summary VDS 55 V RDS(on) max. SMD version 6.5 mΩ ID 80 A P- TO262 -3-1

4N03L04

Abstract: IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03
Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

irfp460 dc welding circuit diagram

Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
Contextual Info: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers

smd marking AG

Abstract: AG marking transistor smd marking SMD BR 2sa172 2SA1729
Contextual Info: Transistors SMD Type High-Speed Switching Applications 2SA1729 Features Adoption of FBET, MBIT Process. Large Current Capacity. Low Collector-to-Emitter Saturation Voltage. High-Speed Switching. Small-Sized Package. Absolute Maximum Ratings Ta = 25 Parameter

03N60S5

Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5
Contextual Info: SPP03N60S5 SPB03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity

Contextual Info: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40

2n08l07

Abstract: 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2
Contextual Info: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

PN04L03

Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
Contextual Info: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

PN08L07

Abstract: Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07
Contextual Info: IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N04L03

Abstract: IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063
Contextual Info: IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N04L03

Abstract: SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1