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    onsemi FQD13N10LTM

    Power MOSFET N-Channel Logic Level QFET® 100 V 10 A 180 mΩ DPAK
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    Master Electronics FQD13N10LTM 2,320
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    • 1000 $0.31
    • 10000 $0.29
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    Avnet Americas FQD13N10LTM Tape & Reel 65,000 14 Weeks 2,500
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    Newark () FQD13N10LTM Cut Tape 2,034 1
    • 1 $1.20
    • 10 $1.20
    • 100 $0.55
    • 1000 $0.44
    • 10000 $0.42
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    FQD13N10LTM Tape & Reel 2,034 100
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    • 100 $0.55
    • 1000 $0.44
    • 10000 $0.42
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    FQD13N10LTM Tape & Reel 2,500
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    FQD13N10LTM Tape & Reel 2,500
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    • 10000 $0.39
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    FQD13N10LTM Tape & Reel 2,500
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    • 10000 $0.38
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    Rochester Electronics FQD13N10LTM 8,717 1
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    • 100 $0.35
    • 1000 $0.29
    • 10000 $0.26
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    TME FQD13N10LTM 731 1
    • 1 $0.91
    • 10 $0.63
    • 100 $0.44
    • 1000 $0.33
    • 10000 $0.29
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    Ameya Holding Limited FQD13N10LTM 12,500
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    Avnet Asia FQD13N10LTM 14 Weeks 5,000
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    Avnet Silica FQD13N10LTM 5,000 11 Weeks 2,500
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    EBV Elektronik FQD13N10LTM 12 Weeks 2,500
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    Maritex FQD13N10LTM 5,816 1
    • 1 $0.55
    • 10 $0.45
    • 100 $0.32
    • 1000 $0.25
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    onsemi FQU13N10LTU

    - Rail/Tube (Alt: FQU13N10LTU)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FQU13N10LTU Tube 5,040
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    Flip Electronics FQU13N10LTU 4,790
    • 1 $0.95
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    • 100 $0.95
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    Infineon Technologies AG BSC123N10LSGATMA1

    Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP T/R
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    Bristol Electronics BSC123N10LSGATMA1 3,735
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    Rochester Electronics BSC123N10LSGATMA1 15,311 1
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    • 100 $0.84
    • 1000 $0.70
    • 10000 $0.62
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    Win Source Electronics BSC123N10LSGATMA1 16,360
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    • 100 $0.95
    • 1000 $0.74
    • 10000 $0.74
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    Infineon Technologies AG BSC123N10LS G

    Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BSC123N10LS G 1,201
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    Fairchild Semiconductor Corporation FQB33N10LTM

    Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics FQB33N10LTM 601
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    Win Source Electronics FQB33N10LTM 2,179
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    • 100 $2.77
    • 1000 $2.49
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    Find more 3N10L price and stock on Findchips.com

    3N10L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IPD30N10S3L

    Abstract: IPD30N10 IPD30N10S3 3N10L34 IPD30N10S3L-34 GD25Q 3N10L PG-TO252-3-11
    Contextual Info: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		ipd30n10s3l-34pg-to252-3-113n10l34ipd30n10s3l+4ipd30n10ipd30n10s3gd25q3n10l PDF

    SMD-2520

    Abstract: 3N10L smd diode 104
    Contextual Info: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 12 mW ID 70 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		ipb70n10s3l-12ipi70n10s3l-12ipp70n10s3l-12pg-to262-3-1+5pg-to263-3-2pg-to220-3-1smd-25203n10lsmd diode 104 PDF

    D35AV

    Abstract: smd code D35 3N10L 3N10L25 IPD35N10S3L
    Contextual Info: Target Data Sheet IPD35N10S3L-26 OptiMOS - T Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 100 V R DS on ,max 26 mΩ ID 35 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		ipd35n10s3l-26pg-to252-3-113n10l2525mohm+526mohmd35avsmd code d353n10lipd35n10s3l PDF

    3N10L34

    Contextual Info: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mW ID 30 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		ipd30n10s3l-34pg-to252-3-113n10l34 PDF

    3N10L16

    Abstract: 30025A DIODE smd marking Ag IPB50N10S3L-16 smd diode 949 SMD TRANSISTOR MARKING DD IPI50N10S3L-16 IPP50N10S3L-16 PG-TO263-3-2 DIODE smd marking v1
    Contextual Info: IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 15.4 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 50 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		ipb50n10s3l-16ipi50n10s3l-16ipp50n10s3l-16pg-to263-3-2+8pg-to262-3-1pg-to220-3-13n10l1630025adiode smd marking agsmd diode 949smd transistor marking dddiode smd marking v1 PDF

    3N10L26

    Abstract: D35A IPD35N10S3L-26
    Contextual Info: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mW ID 35 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		ipd35n10s3l-26pg-to252-3-113n10l26d35a PDF

    3N10L16

    Abstract: DIODE smd marking v1 smd diode 949
    Contextual Info: IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 15.4 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 50 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		ipb50n10s3l-16ipi50n10s3l-16ipp50n10s3l-16pg-to262-3-1+5pg-to263-3-2pg-to220-3-13n10l16diode smd marking v1smd diode 949 PDF

    3N10L12

    Abstract: IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12 PG-TO263-3-2 DIODE smd marking v1 3N10L
    Contextual Info: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary Features V DS 100 V R DS on ,max (SMD version) 12 mΩ ID 70 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		ipb70n10s3l-12ipi70n10s3l-12ipp70n10s3l-12pg-to263-3-2+5pg-to262-3-1pg-to220-3-13n10l12diode smd marking v13n10l PDF

    3N10L26

    Abstract: IPD35N10S3L-26 3N10L PG-TO252-3-11 d35a
    Contextual Info: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mΩ ID 35 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		ipd35n10s3l-26pg-to252-3-113n10l263n10l+1d35a PDF

    3N10L34

    Abstract: IPD30N10S3L-34
    Contextual Info: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		ipd30n10s3l-34pg-to252-3-113n10l34 PDF

    3N10L

    Abstract: 3N10L12 PG-TO263-3-2 3N10L1
    Contextual Info: Target Data Sheet IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 100 V R DS on ,max (SMD version) 12 mΩ ID 70 A • MSL1 up to 260°C peak reflow


    Original     		ipb70n10s3l-12ipi70n10s3l-12ipp70n10s3l-12pg-to263-3-2+5pg-to262-3-1pg-to220-3-13n10l3n10l123n10l1 PDF

    3N10L26

    Contextual Info: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mW ID 35 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		ipd35n10s3l-26pg-to252-3-113n10l26 PDF

    3N10L26

    Abstract: IPB35N10S3L-26 3N10L IPB35N ipb35n10s3l IPB35N10
    Contextual Info: IPB35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26.3 mW ID 35 A Features PG-TO263-3-2 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		ipb35n10s3l-26pg-to263-3-23n10l263n10l+3ipb35nipb35n10s3lipb35n10 PDF