ADVANCED POWER TECHNOLOGY Search Results

IRF540NS

Abstract: IRF540NL 3F smd transistor MOSFET IRF540n AN-994 IRF540N 4.5v to 100v input regulator
Contextual Info: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing

transistor 1800MHz

Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET „ DESCRIPTION As advanced N-channel level power MOSFET, the UTT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain

Contextual Info: RF3833 30MHz to 2000MHz, 25W GaN Wide-Band Power Amplifier RF3833 Proposed 30MHz TO 2000MHz, 25W GaN WIDE-BAND POWER AMPLIFIER Package: Air-Cavity Cu Features  Advanced GaN HEMT Technology  Output Power of 25W  Advanced Heat-Sink Technology  30–2000 MHz Instantaneous

TO-252 N-channel MOSFET

Abstract: UT108N03L-TN3-T ut108n03 TO-252 N-channel power MOSFET
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET 1 „ DESCRIPTION As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low

IRFZ48NL

Abstract: 1408B AN-994 IRFZ48NS
Contextual Info: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from

IRFZ44N

Abstract: AN-994 IRFZ44NL IRFZ44NS
Contextual Info: PD - 94153 Advanced Process Technology Surface Mount IRFZ44NS l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ44NS IRFZ44NL l HEXFET Power MOSFET l Advanced HEXFET® Power MOSFETs from International

Contextual Info: RFG1M09180 700MHz to 1000MHz 180W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology  Peak Modulated Power >240W  Advanced Heat-Sink Technology  Single Circuit for 865MHz to 960MHz  48V Operation Typical Performance

marking 43a

Abstract: IRF1010NL AN-994 IRF1010N IRF1010NS
Contextual Info: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from

720-LWG6SPCBEA5K8L1Z

Abstract: OHL02778
Contextual Info: 2011-05-12 Advanced Power TOPLED Datasheet LW G6SP released Advanced Power TOPLED features a compact package with a wide brightness range and high luminous efficiency. It completes the high-power product line with an outstanding lifetime of up to 50,000 hours.

AN-994

Abstract: IRFR120 IRFR3411 IRFU120 IRFU3411 IRFR341
Contextual Info: PD - 94393 l l l l l l IRFR3411 IRFU3411 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 44mΩ G Description Advanced HEXFET® Power MOSFETs from International

marking 43a

Abstract: AN-994 IRF2807L IRF2807S
Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

AN-994

Abstract: IRF2807L IRF2807S
Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

Contextual Info: ADVANCED POWER TECHNOLOGY blE D • DE S 7‘l D t1 0GGG773 b 7 T « A V P ADVANCED P ow er T e c h n o lo g y 9 POWER MOS IV APT601R3CN 600V APT551R3CN 550V APT601R6CN 600V APT551R6CN 550V 6.5A 6.5A 5.5A 5.5A 1.30Q 1.30Q 1.60Q 1.60Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

IRF540N

Abstract: 91341B 16ans 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91341B IRF540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International

IRFZ46N

Abstract: for IRFZ46N MOSFET IRFZ46N transistor IRFZ46N IRF1010
Contextual Info: PD-91277A IRFZ46N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 16.5mΩ G ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International

irf2807

Abstract: irf2807 equivalent application of IRF2807
Contextual Info: PD - 91517 IRF2807 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 13mΩ G ID = 82A‡ S Description Advanced HEXFET® Power MOSFETs from International

*f1010e

Abstract: irf1010e equivalent IRF1010E
Contextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International

IRF1010N

Contextual Info: PD - 91278 IRF1010N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 11mΩ G ID = 85A‡ S Description Advanced HEXFET® Power MOSFETs from International

diode 71A

Abstract: IRF1010 IRL3803V
Contextual Info: PD - 94734 IRL3803V HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 5.5mΩ G ID = 140A‡ S Description Advanced HEXFET® Power MOSFETs from International

radar 77 ghz receiver

Abstract: MRD2001
Contextual Info: Analog, Mixed Signal and Power Management MRD2001 77 GHz Radar Transceiver Chipset Features Overview • Scalable to four Tx and 12 Rx channels Freescale millimeter wave and radar products enable advanced, high-performance, multi-channel • Advanced packaging technology

Contextual Info: RFHA1025 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features • Wideband Operation 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology  Supports Multiple Pulse Conditions  10% to 20% Duty Cycle

Contextual Info: AP9577GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D RDS ON Simple Drive Requirement ID Fast Switching Characteristic G RoHS Compliant -60V 64m -17A S Description AP9577 series are from Advanced Power innovated design and silicon

AN-994

Abstract: IRFZ48NL IRFZ48NS IRL3103L n mosfet low vgs
Contextual Info: PD - 95125 l l l l l l l IRFZ48NSPbF IRFZ48NLPbF Advanced Process Technology Surface Mount IRFZ48NS Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from