ADVANCED POWER TECHNOLOGY Search Results

IRF540NS

Abstract: IRF540NL 3F smd transistor MOSFET IRF540n AN-994 IRF540N 4.5v to 100v input regulator
Contextual Info: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: 2013-09-24 Advanced Power TOPLED Datasheet Version 1.0 LA G6SP Advanced Power TOPLED features a compact package with a wide brightness range and high luminous efficiency. Advanced Power TOPLED verfügt über eine platzsparende Bauform mit einer breiten Spanne an

ATC800B680JT

Contextual Info: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  

transistor 1800MHz

Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

UF634L

Abstract: a/kvp 81A DIODE
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF634 Preliminary Power MOSFET ADVANCED POWER MOSFET „ DESCRIPTION The UTC UF634 is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS ON , improved gate charge and so on. „ FEATURES

RFHA1003S2

Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

"class AB Linear" 50mhz

Abstract: RFHA1000 Transistor J116
Contextual Info: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 15W  Advanced Heat-Sink Technology

rfha1003

Contextual Info: RFHA1003 RFHA1003 30 MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET „ DESCRIPTION As advanced N-channel level power MOSFET, the UTT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain

Contextual Info: RF3833 30MHz to 2000MHz, 25W GaN Wide-Band Power Amplifier RF3833 Proposed 30MHz TO 2000MHz, 25W GaN WIDE-BAND POWER AMPLIFIER Package: Air-Cavity Cu Features  Advanced GaN HEMT Technology  Output Power of 25W  Advanced Heat-Sink Technology  30–2000 MHz Instantaneous

TO-252 N-channel MOSFET

Abstract: UT108N03L-TN3-T ut108n03 TO-252 N-channel power MOSFET
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET 1 „ DESCRIPTION As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low

IRFZ48NL

Abstract: 1408B AN-994 IRFZ48NS
Contextual Info: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from

FLTR100V10

Abstract: JAHW075S6R5
Contextual Info: Advanced Data Sheet September 2001 Preliminary JAHW075S6R5 Power Modules: dc-dc Converters; 36 Vdc to 75 Vdc Input, 6.5 Vdc Output; 75 W Features • The JAHW Series Power Modules use advanced, surfacemount technology and deliver high-quality, efficient, and

IRFZ44N

Abstract: AN-994 IRFZ44NL IRFZ44NS
Contextual Info: PD - 94153 Advanced Process Technology Surface Mount IRFZ44NS l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ44NS IRFZ44NL l HEXFET Power MOSFET l Advanced HEXFET® Power MOSFETs from International

Contextual Info: RFG1M09180 700MHz to 1000MHz 180W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology  Peak Modulated Power >240W  Advanced Heat-Sink Technology  Single Circuit for 865MHz to 960MHz  48V Operation Typical Performance

ATC100B150JT

Abstract: rfmd envelope tracking
Contextual Info: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power>240W Advanced Heat Sink Technology RF IN

Contextual Info: RFG1M20090 1.8GHz to 2.2GHz 90W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  Single Circuit for 1.9GHz to 2.2GHz  48V Operation Typical Performance

Contextual Info: 2013-05-14 Power SIDELED Datasheet Version 1.0 LR B6SP Advanced Power SideLED features a compact package with a wide brightness range and high luminous efficiency. Advanced Power SIDELED verfügt über eine platzsparende Bauform mit einer breiten Spanne an

Contextual Info: 2013-05-24 Power SIDELED Datasheet Version 1.0 LA B6SP Advanced Power SideLED features a compact package with a wide brightness range and high luminous efficiency. Advanced Power SIDELED verfügt über eine platzsparende Bauform mit einer breiten Spanne an

marking 43a

Abstract: IRF1010NL AN-994 IRF1010N IRF1010NS
Contextual Info: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from

720-LWG6SPCBEA5K8L1Z

Abstract: OHL02778
Contextual Info: 2011-05-12 Advanced Power TOPLED Datasheet LW G6SP released Advanced Power TOPLED features a compact package with a wide brightness range and high luminous efficiency. It completes the high-power product line with an outstanding lifetime of up to 50,000 hours.

AN-994

Abstract: IRFR120 IRFR3411 IRFU120 IRFU3411 IRFR341
Contextual Info: PD - 94393 l l l l l l IRFR3411 IRFU3411 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 44mΩ G Description Advanced HEXFET® Power MOSFETs from International

marking 43a

Abstract: AN-994 IRF2807L IRF2807S
Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

AN-994

Abstract: IRF2807L IRF2807S
Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International