ADE 443 TI Search Results

HD74HC137

Abstract: Hitachi DSA00221
Contextual Info: HD74HC137 3-to-8-line Decoder/Demultiplexer with Address Latch ADE-205-443 Z 1st. Edition Sep. 2000 Description The HD74HC137 implements a three-to-eight line decoder with latches on the three address inputs. When GL goes from low to high, the address present at the select inputs (A, B and C) is stored in the latches. As

HD74HC137

Abstract: HD74HC137P PRDP0016AE-B PRSP0016DH-B
Contextual Info: HD74HC137 3-to-8-line Decoder/Demultiplexer with Address Latch REJ03D0569-0200 Previous ADE-205-443 Rev.2.00 Oct 11, 2005 Description The HD74HC137 implements a three-to-eight line decoder with latches on the three address inputs. When GL goes from low to high, the address present at the select inputs (A, B and C) is stored in the latches. As long as GL remains

ir 441 c

Abstract: 443 DIODE IRF840 irfp440 f441 ic F441 IRF440 high voltage pulse with irf840 MOSFET IRF840 Diode 442
Contextual Info: IRF840/841/842/843 IRFP440/441/442/443 IRF440/441 /442/443 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Low er R d s ON Im proved ind u ctive ru g g ed n ess F ast sw itch in g tim es R u g ged p olysilicon g a te ce ll structure Low er in p u t ca p a c ita n c e

Diode LT 442

Abstract: Diode LT 443 IRFP441 IRFP440 ir 441 c IRFP443
Contextual Info: IRF840/841/842/843 IRFP440/441/442/443 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ru g g e d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended sa le operating area

IRF440

Abstract: DDD511B DDD5141 IRF44 IRF441 IRF442 IRF443 mosfet 441 7964 mosfet
Contextual Info: 7964142 DE I T T b m M E SAMSUNG S E M I C O N D UCTOR 98D IN C D T S f -t3 05139 N-CHANNEL POWER MOSFETS □ □ □ S 1 3 ci 1 IRF440/441/442/443 FEATURES Low RD£i on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times

Contextual Info: SAMSUNG ELECTRONICS INC b7E D 7^4142 IRF840/841/842/843 IRFP440/441 /442/443 D017323 b75 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R ds <on Im p ro ve d in du ctive r u g g e d n e s s F a s t sw itc h in g tim e s R u g g e d p o ly silic o n g a te cell stru ctu re

IRF44

Abstract: IRF440
Contextual Info: ; 7964142 DE I T T b m M E SAMSUNG S E M I C O N D U C TOR □ □ □ 5 1 3 e] 1 I 98D IN C ^ D T S f -t3 05139 N-CHANNEL POWER MOSFETS IRF440/441/442/443 FEATURES • • • • • • • • • Low RDS on at high voltage Improved inductive ruggedness

SSH10N80

Abstract: 250M SSH10N70
Contextual Info: N-CHANNEL POWER MOSFETS SSH10N80/70 FEATURES • Lower Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • improved high temperature reliability

npn, transistor, sc 107 b

Abstract: transistor TIP 31A TIP 31a Transistor tip31a TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor
Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | b3b?ES4 aOflSSlô =1 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C POWER TRANSISTORS COMPLEMENTARY SILICON . . . designed for use in general purpose amplifier and switching applications.

SSS4N60

Abstract: SSS4N55
Contextual Info: N-CHANNEL POWER MOSFETS SSS4N60/55 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

IRF 444 H

Abstract: diode deg avalanche zo 150 66 IRf 444 MOSFET IRFS541 IRF N-Channel Power MOSFETs IRFS540 diode deg avalanche zo 150 44 250M cxi MOSFET
Contextual Info: N-CHANNEL POWER MOSFETS IRFS540/541 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

5n80

Abstract: SSH5N70 250M SSH5N80
Contextual Info: N-CHANNEL POWER MOSFETS SSH5N80/70 FEATURES • Lower Rds ON • Improved inductive ruggedness • Fast switching times ■ Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

4n70

Abstract: SSP4N70
Contextual Info: N-CHANNEL POWER MOSFETS SSP4N70 SSH4N70 FEATURES • • • • • • • TO -220 Low er R d s io n Im proved in d u c tiv e rug g e d n e ss Fast s w itc h in g tim e s R ugged p o ly s ilic o n gate c e ll s tru c tu re Lower in p u t ca p a cita n ce

SSS6N60

Abstract: ADE 443 TI MOSFET 6n60 6n60 K300 SSS6N55
Contextual Info: N-CHANNEL POWER MOSFETS SSS6N55/6N60 FEATU RES • A • • 9 • • • TO-270* Low er Ros com* 1im ffMp ro /Nvo hiAo<4 a i •«eA ru rn••gAgAeAd n eAsAsA inMdrAu••c tiv F es! s w itc h in g tim e s R ugged p o ly s ilic o n g a te c e il s tru c tu re

2N6122 transistor

Abstract: 2N6121 2n6123 2N6I24 2N6124 2N61 2N6122 2N6126
Contextual Info: MOTOROLA SC X S T R S /R 1 SE F b3b7254 I QQ ÔM Si'l I fl t lB U N rn MOTOROLA 2N6121, 2N61*2 2N6123 SEMICONDUCTOR TECHNICAL DATA PNP 2N6124, 2N6125 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS 4 AM PERE . . . designed for use in power amplifier and switching circuits, —

Power transistor TO-220 NPN 100 V, TIP 41C

Abstract: TIP 41c transistor 41BT SJ7147 tip42c amplifier TIP4 TIP42 MOTOROLA
Contextual Info: MOTOROLA SC 12E D 1 b3b7ES4 □üflSSSä 1 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN PNP TIP41 TIP41A TIP41B TIP41C TIP42 TIP42A TIP42B TIP42C 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS . . . designed for use in general purpose amplifier and switching

2n 5459

Abstract: 2N5457
Contextual Info: MOTOROLA SC 15E D § b3b7254 OGflbbMb 1 | XSTRS/R F 2N5457 thru 2N5459 * CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S S ym bol V a lu e U n it D ra in-S ource V o ltag e Vos 25 Vdc D ra in-G ate V o ltag e Vq g 25 V dc Vg s r -2 5 V dc R a ting

oks relay

Abstract: 221A-04 72SM AM503 MJE16080 MJE16081 P6302 S500 mje16
Contextual Info: MOTORCLA SC XSTRS/R F 1EE D | L3b?2S4 GGfl5437 «I | T - 33-/3 MOTOROLA • I SEMICONDUCTOR TECHNICAL DATA MJE 16080 MJE 16081 Designer's Data Sheet N P N S ilic o n P o w e r Tran sistors Sw itchm ode III Series ROWER TRANSISTORS 8 AM PERES 400 and 450 VOLTS

N41 1600

Abstract: n41 ol B65803-J-R67 B65813-J-R47 B65807-C1000-K26 B65803JR67 B65816A1011D1 B65805N125G48 B65613 n30 ol
Contextual Info: RM Cores Example of an assem bly set A d ju s tin g s c re w d riv e r fo r a s s e m b ly o n ly A d ju s tin g s c re w C ore C lam p s In s u la tin g w a s h e r 1 C oil fo rm e r C ore T h re a d e d sle e v e (g lu e d -in ) In su la tin g w a s h e r 2

Contextual Info: f j - ~ G ~ ^ LZ SERIES CONNECTORS 1.25mm (.049" Contact Spacing, PCB-to-Cable (Crimp Type) Connectors Subm iniature, low profile c o n n e c to rs w ith 1.25mm (.049") co n ta ct s p a c in g and 2.0mm (.079") m ounted height. S M T board m ounting s id e s are supp lie d on e m b o sse d tape for autom ated m ounting.

lz-5s-sc3

Abstract: LZ-SC-C3-A1-15000 LZ-10P-SL-SMT-E3000 20P 2.0MM
Contextual Info: LZ SERIES CONNECTORS 1.25mm .049" Contact Sparing, PCB-to-Cable (Crimp Type) Connectors Subm in iature , low profile c o n n e c to rs w ith 1.25mm (.049") co n ta ct s p a c in g and 2.0mm (.079") m ounted height. S M T board m ounting sid e s are su pp lie d on e m b o sse d tape for autom ated m ounting.

P15N60U

Abstract: GP15N60U
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Ttansistor M G P 15N 60U N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS BPW36/BPW37 PACKAGE DIMENSION. The B P W 36/37 are silicon phototransisters m ounted in narrow angle TO -18 packages. FEATURI SYMBOL A <ßD, e 1 h j k L a INCHES MIN. MAX. .225 .255 .016 .021 .209 .230 .178

MD0050602

Abstract: MR1-12S-5 DC250V 8Z01 MR-1-10 MD0050598 MR1-12S MD0050601 MR112
Contextual Info: s Ml T "Ä " ft MRE-S 1-12 type S 'J v J B P -^ U - 7A " J * Miniature Rotary Switches X -f i Features iy 1. Ideal for Switching of High Frequency Circuit 1 A special exclusive grounding terminal is provided. All ff T ^ T c ^ j Ë y ' I l l S & A ' , 7 —T J .z m M t tô W k c r t z s b ,