ADE 443 TI Search Results

ir 441 c

Abstract: 443 DIODE IRF840 irfp440 f441 ic F441 IRF440 high voltage pulse with irf840 MOSFET IRF840 Diode 442
Contextual Info: IRF840/841/842/843 IRFP440/441/442/443 IRF440/441 /442/443 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Low er R d s ON Im proved ind u ctive ru g g ed n ess F ast sw itch in g tim es R u g ged p olysilicon g a te ce ll structure Low er in p u t ca p a c ita n c e

Contextual Info: SAMSUNG ELECTRONICS INC b7E D 7^4142 IRF840/841/842/843 IRFP440/441 /442/443 D017323 b75 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R ds <on Im p ro ve d in du ctive r u g g e d n e s s F a s t sw itc h in g tim e s R u g g e d p o ly silic o n g a te cell stru ctu re

SSH10N80

Abstract: 250M SSH10N70
Contextual Info: N-CHANNEL POWER MOSFETS SSH10N80/70 FEATURES • Lower Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • improved high temperature reliability

IRF 444 H

Abstract: diode deg avalanche zo 150 66 IRf 444 MOSFET IRFS541 IRF N-Channel Power MOSFETs IRFS540 diode deg avalanche zo 150 44 250M cxi MOSFET
Contextual Info: N-CHANNEL POWER MOSFETS IRFS540/541 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

SSS6N60

Abstract: ADE 443 TI MOSFET 6n60 6n60 K300 SSS6N55
Contextual Info: N-CHANNEL POWER MOSFETS SSS6N55/6N60 FEATU RES • A • • 9 • • • TO-270* Low er Ros com* 1im ffMp ro /Nvo hiAo<4 a i •«eA ru rn••gAgAeAd n eAsAsA inMdrAu••c tiv F es! s w itc h in g tim e s R ugged p o ly s ilic o n g a te c e il s tru c tu re

2N6122 transistor

Abstract: 2N6121 2n6123 2N6I24 2N6124 2N61 2N6122 2N6126
Contextual Info: MOTOROLA SC X S T R S /R 1 SE F b3b7254 I QQ ÔM Si'l I fl t lB U N rn MOTOROLA 2N6121, 2N61*2 2N6123 SEMICONDUCTOR TECHNICAL DATA PNP 2N6124, 2N6125 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS 4 AM PERE . . . designed for use in power amplifier and switching circuits, —

2n 5459

Abstract: 2N5457
Contextual Info: MOTOROLA SC 15E D § b3b7254 OGflbbMb 1 | XSTRS/R F 2N5457 thru 2N5459 * CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S S ym bol V a lu e U n it D ra in-S ource V o ltag e Vos 25 Vdc D ra in-G ate V o ltag e Vq g 25 V dc Vg s r -2 5 V dc R a ting

N41 1600

Abstract: n41 ol B65803-J-R67 B65813-J-R47 B65807-C1000-K26 B65803JR67 B65816A1011D1 B65805N125G48 B65613 n30 ol
Contextual Info: RM Cores Example of an assem bly set A d ju s tin g s c re w d riv e r fo r a s s e m b ly o n ly A d ju s tin g s c re w C ore C lam p s In s u la tin g w a s h e r 1 C oil fo rm e r C ore T h re a d e d sle e v e (g lu e d -in ) In su la tin g w a s h e r 2

Contextual Info: f j - ~ G ~ ^ LZ SERIES CONNECTORS 1.25mm (.049" Contact Spacing, PCB-to-Cable (Crimp Type) Connectors Subm iniature, low profile c o n n e c to rs w ith 1.25mm (.049") co n ta ct s p a c in g and 2.0mm (.079") m ounted height. S M T board m ounting s id e s are supp lie d on e m b o sse d tape for autom ated m ounting.

MJ3773

Abstract: AN-415 MJ6302
Contextual Info: MJ3773, MJ6302 SILICON 16 AM PERE POWER TR A N SISTO R S HIGH POWER NPN SILICO N POWER TRA N SISTO R S Hpibase transistors for ultimate circu it performance based on the designer's requirement. E P IB A S E NPN SILICO N 120, 140 V O L T S 200 W ATTS — designed for power am plifier and switching

P8226

Abstract: P8216 D8226 D8216 AM8216 AM8216XC AM8226XC MD8216 MD8226
Contextual Info: A m 8216 • A m 8226 F o u r-B it P a r a lle l B id ire c tio n a l B us D riv e r Distinctive Characteristics • • • Data bus buffer driver for 8 0 8 0 type CPU's Low input load current — 0.25m A maximum High output drive capability for driving system data

jeida dram 88 pin

Contextual Info: M I lt^ P n N M T8D88C132 1 MEG x 32, 2 MEG x 16 IC D R AM C AR D IC DRAM CARD 4 MEGABYTES 1 MEG x 32, 2 MEG x 16 PIN ASSIG N M EN T End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access PIN * SYMBOL PIN# Vss 31 NC 61 2 DQ0 32

Contextual Info: 2.70 VOLT ULTRA LOW DROPOUT REGULATOR ZLD0270 PROVISIONAL ISSUE D - MARCH 1998 DEVICE DESCRIPTION FEATURES T h e Z L D O S e r ie s lo w d r o p o u t lin e a r re g u la to rs o p e ra te w ith an e x c e p tio n a lly lo w d ro p o u t v o lta g e , ty p ic a lly o n ly 3 0m V

MX7578kn

Contextual Info: y n y j x i y n C alibrated 12-Bit A/D C onverter _ Features ♦ Continuous Transparent Calibration of Offset and Gain ♦ True 12-Bit Performance without Adjustments ♦ Zero Error Typically <100|xV ♦ Standard Microprocessor Interface

Contextual Info: PRELIMINARY |V |C = R O N MT8D88C132V/432V S , MT16D88C232V/832V(S) 4MB, 8MB, 16MB, 32MB DRAM CARDS DRAM CARD 4,8,16,32 megabytes 1 MEG, 2 MEG, 4 MEG, 8 MEG x 32; 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH PIN ASSIGNMENT (End View) 88-Pin Card (DF-3) • JEDEC-standard 88-pin DRAM card

YM3436C

Abstract: YM3436D
Contextual Info: YAMAHA' L S f YM3436D DIR2 Digital audio Interface Receiver • OUTLINE The YM3436D DIR2 receives and dem odulates the digital audio interface form at signals, conform­ ing w ith the E IA J CP-340 or A ES/EBU . Com paring to the YM3623B(DIR), external synchroniza­

Contextual Info: ANALOG DEVICES □ FEATURES Two Matched Sample-and-Hold Amplifiers FuHy Specified and Tested Hold Mode Distortion Acquisition Time to 0.01%: 700 ns Maximum Independent Inputs, Outputs and Control Pins Low Power Dissipation: 190 mW Low Droop Rate: 0.01 pV/|i.s

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

1820N

Contextual Info: BU RR - BROW N [ OPA660 1 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS • WIDE BANDWIDTH: 850MHz BASE LINE RESTORE CIRCUITS • HIGH SLEW RATE: 3000V/,us VIDEO/BROADCAST EQUIPMENT • LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02°

74ls163 truth table

Abstract: RCA-CD4016 74ls163 function table CD40161B CD40160B CD40163B CD40160B Types li638 15-V 74LS160 truth
Contextual Info: CD40160B, CD40161Br CD40162*^CD40163B Types CM O S Synchronous Programmable 4-Bit Counters High-Voltage Types 20-Volt Rating CD 40160B — Decade w ith Asynchronous Clear CD 40161B — Binary with Asynchronous Clear CD 40162B — Decade with Synchronous

CQCC1-N20

Abstract: GDIP1-T16 HA-2400 QML38535 QML-38535
Contextual Info: APR 97 D IS T R IB U T IO N S T A T E M E N T A . Approved for public release; distribution is unlimited. T 0 0 M7 0 f l 0031312 5 9 6 2 -E 3 2 4 -9 7 bbf i 1. SCOPE 1.1 Scope. T his drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in

2A10J

Abstract: 181 .743 d auo -039 MC10H181 MC1699 motorola ic MC 02S5 auo 030 mc1201 dm 1265 r
Contextual Info: M O T O R O MCI 699 L A BEING DISCONTINUED LIFETIME BUY UNTIL JUNE 14. 1989 DIVIDE-BY-FOUR GIGAHERTZ COUNTER DIVIDE-BY-FOUR GIGAHERTZ COUNTER The MC1699 is a divide-by-four gigahertz counter. The clock input requires an ac coupled driving signal of 800 mV amplitude

ad504mh

Abstract: AD504JH AD504M AD504SH ad504lh AD504KH AD504
Contextual Info: □ AN ALO G D E V IC E S FEATURES Low Vq s : 500/iV max AD504M High Gain: IO6 min (AD504L, M. S) Low Drift: 0.5/j V/°C max (AD504M) Free of Popcorn Noise High Accuracy 1C Operational Amplifier AD504 A D 5 0 4 F U N C T IO N A L B LO C K D IA G R A M O FFSET N U LL

MC1666L

Abstract: MC1600 MC1651 MC1662 MC1668 MC1670 MC1672 MC1674 MC1678 MC1688
Contextual Info: K M DOD G flH G tL O O O INTEGRATED CIRCUITS MC1600 Series -30°C to +85°C The re q u ire m e n t fo r d ig ita l systems w ith ever higher perform ance has increased the need fo r high-speed inte­ grated circu its. The in d u s try has recognized th a t th e o nly