AD 303 TRANSISTOR Search Results

MPSA27

Abstract: MPS-A27
Contextual Info: ON Semiconductort Darlington Transistor MPSA27 NPN Silicon MAXIMUM RATINGS Rating Symbol MPSA27 Unit Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C

bc368 equivalent

Abstract: BC368 BC369
Contextual Info: ON Semiconductort NPN BC368, -25 PNP BC369 Amplifier Transistors COLLECTOR 2 COLLECTOR 2 3 BASE 3 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO

BF393

Abstract: MPSA42 MPSA43
Contextual Info: ON Semiconductort High Voltage Transistor BF393 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 300 Vdc Collector–Base Voltage VCBO 300 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 500

BF493S

Abstract: MPSA92 MPSA93
Contextual Info: ON Semiconductort BF493S High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –350 Vdc Collector–Base Voltage VCBO –350 Vdc Emitter–Base Voltage VEBO –6.0 Vdc Collector Current — Continuous

BC372

Abstract: BC373
Contextual Info: BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 2 Vdc Collector Current — Continuous

BC639RL1

Abstract: BC639ZL1 BC635 BC635RL1 BC635ZL1 BC637 BC639
Contextual Info: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR

BC639

Abstract: BC635 BC635RL1 BC635ZL1 BC637 BC639RL1 BC639ZL1
Contextual Info: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR

BC549B

Abstract: BC550B TRANSISTOR BC550B NPN Transistor BC549B BC549 BC550
Contextual Info: Low Noise Transistors BC549B,C BC550B,C NPN Silicon MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit Collector–Emitter Voltage VCEO 30 45 Vdc Collector–Base Voltage VCBO 30 50 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 100

MPSA28

Abstract: MPSA29
Contextual Info: ON Semiconductort MPSA28 MPSA29* Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector–Emitter Voltage VCES 80 100 Vdc Collector–Base Voltage VCBO 80 100 Vdc Emitter–Base Voltage

BC327

Abstract: BC328
Contextual Info: ON Semiconductort Amplifier Transistors BC327,-16,-25 BC328,-16,-25 PNP Silicon MAXIMUM RATINGS Rating Symbol BC327 BC328 Unit Collector–Emitter Voltage VCEO –45 –25 Vdc Collector–Base Voltage VCBO –50 –30 Vdc Emitter–Base Voltage VEBO –5.0

BC560C

Abstract: BC559 BC559B BC560
Contextual Info: Low Noise Transistors BC559, B, C BC560C PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector–Emitter Voltage VCEO –30 –45 Vdc Collector–Base Voltage VCBO –30 –50 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous

MPS6724

Abstract: MPS6725
Contextual Info: One Watt Darlington Transistors MPS6724 MPS6725 NPN Silicon MAXIMUM RATINGS Rating Symbol MPS6724 MPS6725 Unit Collector–Emitter Voltage VCES 40 50 Vdc Collector–Base Voltage VCBO 50 60 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous

BC337

Abstract: BC338 BC337 figure
Contextual Info: ON Semiconductort Amplifier Transistors BC337,-16,-25,-40 BC338,-16,-25,-40 NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous

BU806

Contextual Info: ON Semiconductort BU806 NPN Darlington Power Transistor This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs max

MPSA14

Abstract: MPSA13
Contextual Info: MPSA13 MPSA14 * Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous

BC517

Abstract: BC517 data sheet
Contextual Info: Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C

MPS3646

Abstract: TO226AA
Contextual Info: ON Semiconductort Switching Transistor MPS3646 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Emitter Voltage VCES 40 Vdc Collector −Base Voltage VCBO 40 Vdc Emitter −Base Voltage

BC547 application notes

Abstract: BC546B BC548A BC547 bc547a bc547 collector base emitter BC548 information of BC548 transistor bc547 BC546
Contextual Info: Amplifier Transistors BC546, B BC547, A, B, C BC548, A, B, C NPN Silicon MAXIMUM RATINGS Rating Symbol BC546 BC547 BC548 Unit Collector–Emitter Voltage VCEO 65 45 30 Vdc Collector–Base Voltage VCBO 80 50 30 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous

BC489

Abstract: BC489A BC489B
Contextual Info: ON Semiconductort High Current Transistors BC489, A, B NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 80 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC

MTP8N50E

Contextual Info: TMOS E−FET. Power Field Effect Transistor MTP8N50E N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is

MTP8N50E

Contextual Info: TMOS E-FET. Power Field Effect Transistor MTP8N50E N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is

Contextual Info: Pressure transmitter rotatable 2 PNP/NPN transistor switching outputs PS010A-501-2UPN8X-H1141 • ■ ■ ■ Housing rotatable after mounting the process connection Reading of adjusted values without tools Secure programming through recessed pushbutton and keylock

Contextual Info: Pressure sensor with voltage output and PNP/NPN transistor switching output PS003V-310-LUUPN8X-H1141 • ■ ■ ■ Rigid process connection, non-rotatable body Reading of adjusted values without tools Secure programming through recessed pushbutton and keylock

Contextual Info: Pressure sensor with voltage output and PNP/NPN transistor switching output PS600R-311-LUUPN8X-H1141 • ■ ■ ■ Rigid process connection, non-rotatable body Reading of adjusted values without tools Secure programming through recessed pushbutton and keylock