AD 156 TRANSISTOR Search Results

4518 APPLICATION CIRCUITS

Abstract: M34518E8FP M34518E8SP M34518M2-XXXFP M34518M2-XXXSP M34518M4-XXXFP M34518M4-XXXSP M34518M6-XXXFP M34518M8-XXXFP MDB2
Contextual Info: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4518 Group REJ03B0008-0200Z Rev.2.00 2003.04.15 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4518 Group is a 4-bit single-chip microcomputer designed with

4584 Group

Abstract: 4584 FR20 FR21 FR22 M34584EDFP M34584MD-XXXFP transistor on 4584
Contextual Info: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4584 Group REJ03B0010-0200Z Rev.2.00 2003.04.16 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4584 Group is a 4-bit single-chip microcomputer designed with

FZH 161

Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
Contextual Info: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency

Contextual Info: T em ic TP1220L, TP/VP2020L, BSS92_ sì„conix P-Channel Enhancement-Mode MOS Transistors Product Summary P art N um ber V BR DSS M in (V) r DS(on) M ax (£2) VGS(lh) (V) I d (A) TP1220L -1 2 0 20 @ V GS = -4 .5 V —1 to -2 .4 -0 .1 2 TP2020L -2 0 0

HXTR-3685

Abstract: HXTR-3686 HXTR3685 HXTR 3685
Contextual Info: Whpì HEWLETT ll'/ U PACKARD Low Cost General Purpose Transistors Technical Data HXTR-3685 HXTR-3686 F eatures HXTR-3685 HXTR-3686 HXTR-3685 « Low Noise Figure: 1.8 dB Typical at 1 GHz • High Gain: 16.4 typ ical at 1 GHz at Noise Figure Bias • Low Cost Plastic Package

MMFT6N03HD

Abstract: h bridge ad 156 transistor
Contextual Info: MOTOROLA Order this document through Power Products Marketing SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT6N03HD HDTMOS Single N-Channel Field Effect Transistor Medium Power Surface Mount Products These medium power SOT–223 devices are an advanced series

2222A

Contextual Info: Who1 PHAECWKLAERTDT mLKM 4.8 VNPN Common Emitter Medium Power Output Transistor Ifechnical Data AT-31625 Features • 4.8 V olt O peration • +28.0 dBm P, U @ 900 MHz, Typ* MSOP-3 Surface Mount Plastic Package O utline 25 • 70% C ollector E fficiency @ 900 MHz, Typ.

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

TA8559

Abstract: VK 200-09 59014 Silicon Power Cube SILVER-MICA FERROXCUBE VK200 rca 349 ai 016.3 arco 406
Contextual Info: File No. 579 RF Power Transistors Solid State Division 40953 40954 40955 1 .7 5 -, 1 0 -, and 25-W , 156-M Hz Silicon N -P -N Overlay Transistors '&ÊÊPw 3 r For High-Power V H F Am plifiers r ▼ Features • Designed fo r vhf marine transmitters 40953 JEDEC TO-39

Contextual Info: MOTOROLA Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR911LT1 MPS911 . . . designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as

BC368

Abstract: TO-92 plastic package transistors TRANSISTOR bc368
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC368 TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF Applications, Suitable for Class-B Audio Output Stages up to 3W

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF422 BPL TO-92 BCE Designed for High Voltage Video Amplifier in Television Receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC640-16 BPL TO-92 BCE Driver Stages of Audio Amplifier Application.

BC368

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC368 BPL TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF

BC369

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC369 TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC369 TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF Applications, Suitable for Class-B Audio Output Stages up to 3W

BC368

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC368 BPL TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF Applications, Suitable for Class-B Audio Output Stages up to 3W

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF422 BPL TO-92 BCE Designed for High Voltage Video Amplifier in Television Receivers.

BC369

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC369 TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF Applications, Suitable for Class-B Audio Output Stages up to 3W

BC368

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC368 TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF

T5 transistor TO-247

Abstract: IRG4PSH71K mj 340
Contextual Info: PD - 91687A IRG4PSH71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for

RT150B

Abstract: THP47 transistor TF78 2N2467 2SB331 AC117 AC178 AD164 xc121 TF78/30
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

transistor 2222a

Abstract: pm 2222a 3316 TRANSISTOR
Contextual Info: Thp m LriM I H E W LE T T P ack ard 4.8 VNPN Silicon Bipolar Common Emitter Transistor Ifechnical Data A T-38086 F eatures • 4.8 Volt Pulsed pulse width = 577 jisec, duty cycle = 12.5% /CW Operation • +28 dBm Pulsed Pout @ 900 MHz, Typ. • +23.5 dBm CWPout

1N6304

Abstract: 1N6304R 1N6305 1N6306 1N6304-1N6306
Contextual Info: 1N6304— 1N6306 RECTIFIERS High Efficiency, 70A F EATU RES DESCRIPTION • • • • • • • The 1N6304 Series is specifically designed for operation in power switching circuits operating at frequencies of at least 20KHz. The very low forward voltage and